IXFN52N90P

IXFN52N90P
Mfr. #:
IXFN52N90P
निर्माता:
Littelfuse
विवरण:
MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IXFN52N90P डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IXFN52N90P थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
IXYS
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
चेसिस माउन्ट
प्याकेज / केस:
SOT-227-4
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
900 V
आईडी - निरन्तर ड्रेन वर्तमान:
43 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
160 mOhms
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
132 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
890 W
व्यापार नाम:
HiPerFET
प्याकेजिङ:
ट्यूब
शृङ्खला:
IXFN52N90
प्रकार:
ध्रुवीय शक्ति MOSFET
ब्रान्ड:
IXYS
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
35 S / 20 S
पतन समय:
42 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
80 ns
कारखाना प्याक मात्रा:
10
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
95 ns
सामान्य टर्न-अन ढिलाइ समय:
63 ns
एकाइ वजन:
1.340411 oz
Tags
IXFN52, IXFN5, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 900V 43A SOT227
900V Polar HiPerFET Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
भाग # Mfg। विवरण स्टक मूल्य
IXFN52N90P
DISTI # IXFN52N90P-ND
IXYS CorporationMOSFET N-CH 900V 43A SOT227
RoHS: Compliant
Min Qty: 200
Container: Tube
Limited Supply - Call
    IXFN52N90P
    DISTI # 747-IXFN52N90P
    IXYS CorporationMOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
    RoHS: Compliant
    0
    • 1:$35.0300
    • 5:$34.6700
    • 10:$32.3100
    • 25:$30.8600
    • 100:$27.5900
    • 250:$26.3200
    छवि भाग # विवरण
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    Mfr.#: IXFN50N50

    OMO.#: OMO-IXFN50N50

    MOSFET 50 Amps 500V 0.1 Rds
    IXFN50N80

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    OMO.#: OMO-IXFN50N80-1190

    नयाँ र मौलिक
    IXFN50N80Q2

    Mfr.#: IXFN50N80Q2

    OMO.#: OMO-IXFN50N80Q2-IXYS-CORPORATION

    MOSFET N-CH 800V 50A SOT-227B
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    MOSFET N-CH 500V 55A SOT227B
    IXFN50N120SK

    Mfr.#: IXFN50N120SK

    OMO.#: OMO-IXFN50N120SK-IXYS-CORPORATION

    MOSFET N-CH
    IXFN50N50

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    OMO.#: OMO-IXFN50N50-IXYS-CORPORATION

    MOSFET 50 Amps 500V 0.1 Rds
    IXFN55N50

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    IGBT Transistors MOSFET 55 Amps 500V 0.08 Rds
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    5000
    मात्रा प्रविष्ट गर्नुहोस्:
    IXFN52N90P को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ३५.०३
    US$ ३५.०३
    5
    US$ ३४.६७
    US$ १७३.३५
    10
    US$ ३२.३१
    US$ ३२३.१०
    25
    US$ ३०.८६
    US$ ७७१.५०
    100
    US$ २७.५९
    US$ २ ७५९.००
    250
    US$ २६.३२
    US$ ६ ५८०.००
    बाट सुरु गर्नुहोस्
    नवीनतम उत्पादनहरू
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