OMO ElectronicOMO Electronic
Expand menu
नमस्कार, साइन इन गर्नुहोस्मेरो खाता
0 कार्ट

IXFN52N100X

IXFN52N100X
Mfr. #:
IXFN52N100X
निर्माता:
Littelfuse
विवरण:
MOSFET 1000V 44A SOT-227 Power MOSFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IXFN52N100X डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IXFN52N100X थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
IXYS
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SOT-227-4
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
1000 V
आईडी - निरन्तर ड्रेन वर्तमान:
44 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
125 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3.5 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
245 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
830 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
HiPerFET
प्याकेजिङ:
ट्यूब
शृङ्खला:
एक्स-क्लास
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
IXYS
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
23 S
पतन समय:
9 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
13 ns
कारखाना प्याक मात्रा:
10
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
107 ns
सामान्य टर्न-अन ढिलाइ समय:
34 ns
Tags
IXFN52, IXFN5, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
X-Class 850V - 1000V Power MOSFETs with HiPerFET™
IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
भाग # Mfg। विवरण स्टक मूल्य
IXFN52N100X
DISTI # IXFN52N100X-ND		IXYS CorporationMOSFET 1KV 44A ULTRA JCT SOT227
RoHS: Compliant
Min Qty: 1
Container: Tube		10In Stock
  • 100:$31.2840
  • 30:$33.6600
  • 10:$36.6300
  • 1:$39.6000
IXFN52N100X
DISTI # 747-IXFN52N100X		IXYS CorporationMOSFET 1000V 44A SOT-227 Power MOSFET
RoHS: Compliant		24
  • 1:$39.6000
  • 5:$37.6200
  • 10:$36.6300
  • 25:$33.6600
  • 50:$32.2300
  • 100:$31.2900
  • 250:$28.7100
छवि भाग # विवरण
IXDD614PI

Mfr.#: IXDD614PI

OMO.#: OMO-IXDD614PI

 Gate Drivers 14-Ampere Low-Side Ultrafast MOSFET
RC0603FR-071ML

Mfr.#: RC0603FR-071ML

OMO.#: OMO-RC0603FR-071ML

 Thick Film Resistors - SMD 1M OHM 1%
IXDD614PI

Mfr.#: IXDD614PI

OMO.#: OMO-IXDD614PI-IXYS-INTEGRATED-CIRCUITS-DIVIS

 Gate Drivers 14-Ampere Low-Side Ultrafast MOSFET
1285

Mfr.#: 1285

OMO.#: OMO-1285-POMONA-ELECTRONICS

 Terminals TERMINAL .187X.020
MS32 20008

Mfr.#: MS32 20008

OMO.#: OMO-MS32-20008-AMETHERM

 Inrush Current Limiters 32mm 20ohms 8A INRSH CURR LIMITER
RC0603FR-071ML

Mfr.#: RC0603FR-071ML

OMO.#: OMO-RC0603FR-071ML-YAGEO

 Thick Film Resistors - SMD 1M OHM 1%
उपलब्धता
स्टक:
24
अर्डर मा:
2007
मात्रा प्रविष्ट गर्नुहोस्:
IXFN52N100X को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ३९.६०
US$ ३९.६०
5
US$ ३७.६२
US$ १८८.१०
10
US$ ३६.६३
US$ ३६६.३०
25
US$ ३३.६६
US$ ८४१.५०
50
US$ ३२.२३
US$ १ ६११.५०
100
US$ ३१.२९
US$ ३ १२९.००
250
US$ २८.७१
US$ ७ १७७.५०
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
More Newest Products
Top