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SIHB22N65E-GE3

SIHB22N65E-GE3
Mfr. #:
SIHB22N65E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHB22N65E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB22N65E-GE3 Datasheet
ECAD Model:
थप जानकारी:
SIHB22N65E-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
700 V
आईडी - निरन्तर ड्रेन वर्तमान:
22 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
180 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
73 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
227 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
थोक
शृङ्खला:
E
ब्रान्ड:
Vishay / Siliconix
पतन समय:
38 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
33 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
73 ns
सामान्य टर्न-अन ढिलाइ समय:
22 ns
एकाइ वजन:
0.050717 oz
Tags
SIHB22, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 22A 3-Pin(2+Tab) D2PAK
***et
N-CHANNEL 650V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHB22N65E-GE3
DISTI # SIHB22N65E-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 22A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		5In Stock
  • 1000:$2.6642
  • 500:$3.1590
  • 100:$3.9012
  • 10:$4.7580
  • 1:$5.3300
SIHB22N65E-GE3
DISTI # SIHB22N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 22A 3-Pin D2PAK T/R - Tape and Reel (Alt: SIHB22N65E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.4900
  • 2000:$2.3900
  • 4000:$2.2900
  • 6000:$2.1900
  • 10000:$2.1900
SIHB22N65E-GE3
DISTI # 40X8670		Vishay IntertechnologiesMOSFET Transistor, N Channel, 22 A, 650 V, 0.15 ohm, 10 V RoHS Compliant: Yes1461
  • 1:$4.8500
  • 10:$4.0200
  • 25:$3.7800
  • 50:$3.5500
  • 100:$3.3100
  • 500:$2.8900
SIHB22N65E-GE3
DISTI # 78-SIHB22N65E-GE3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		0
  • 1:$4.8500
  • 10:$4.0200
  • 100:$3.3100
  • 250:$3.2100
  • 500:$2.8900
SIHB22N65E-GE3
DISTI # 2400375		Vishay IntertechnologiesMOSFET, N CH, 650V, 22A, TO-263-3
RoHS: Compliant		1461
  • 1:$7.6800
  • 10:$6.3700
  • 100:$5.2400
  • 250:$5.0900
  • 500:$4.5800
SIHB22N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas -
    SIHB22N65E-GE3
    DISTI # 2400375    		Vishay IntertechnologiesMOSFET, N CH, 650V, 22A, TO-263-3
    RoHS: Compliant    		1461
    • 1:£4.0800
    • 10:£3.0400
    • 100:£2.5000
    • 250:£2.4300
    • 500:£2.1900
    छवि भाग # विवरण
    SIHB22N60E-E3

    Mfr.#: SIHB22N60E-E3

    OMO.#: OMO-SIHB22N60E-E3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60E-GE3

    Mfr.#: SIHB22N60E-GE3

    OMO.#: OMO-SIHB22N60E-GE3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N65E-GE3

    Mfr.#: SIHB22N65E-GE3

    OMO.#: OMO-SIHB22N65E-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
    SIHB22N60E-E3

    Mfr.#: SIHB22N60E-E3

    OMO.#: OMO-SIHB22N60E-E3-VISHAY

    		 RF Bipolar Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
    SIHB22N60AEL-GE3

    Mfr.#: SIHB22N60AEL-GE3

    OMO.#: OMO-SIHB22N60AEL-GE3-VISHAY

    		 MOSFET N-CHAN 600V
    SIHB22N60E

    Mfr.#: SIHB22N60E

    OMO.#: OMO-SIHB22N60E-1190

    		 Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    SIHB22N60ET1-GE3

    Mfr.#: SIHB22N60ET1-GE3

    OMO.#: OMO-SIHB22N60ET1-GE3-VISHAY

    		 MOSFET N-CH 600V 21A TO263
    SIHB22N60S-GE3

    Mfr.#: SIHB22N60S-GE3

    OMO.#: OMO-SIHB22N60S-GE3-VISHAY

    		 MOSFET N-CH 650V TO263
    SIHB22N60SE3

    Mfr.#: SIHB22N60SE3

    OMO.#: OMO-SIHB22N60SE3-1190

    		 Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    SIHB22N65E

    Mfr.#: SIHB22N65E

    OMO.#: OMO-SIHB22N65E-1190

    		 Trans MOSFET N-CH 650V 22A 3-Pin D2PAK - Tape and Reel (Alt: SIHB22N65E)
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    4000
    मात्रा प्रविष्ट गर्नुहोस्:
    SIHB22N65E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1000
    US$ २.४२
    US$ २ ४२०.००
    2000
    US$ २.३०
    US$ ४ ६००.००
    5000
    US$ २.२१
    US$ ११ ०५०.००
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