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| भाग # | Mfg। | विवरण | स्टक | मूल्य |
|---|---|---|---|---|
| SIHB22N60ET1-GE3 DISTI # V72:2272_09219036 | Vishay Intertechnologies | SIHB22N60ET1-GE3 | 0 | |
| SIHB22N60ET1-GE3 DISTI # SIHB22N60ET1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 600V 21A TO263 RoHS: Not compliant Min Qty: 1 Container: Cut Tape (CT) | 785In Stock |
|
| SIHB22N60ET1-GE3 DISTI # SIHB22N60ET1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 600V 21A TO263 RoHS: Not compliant Min Qty: 1 Container: Digi-Reel® | 785In Stock |
|
| SIHB22N60ET1-GE3 DISTI # SIHB22N60ET1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 600V 21A TO263 RoHS: Not compliant Min Qty: 800 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| SIHB22N60ET1-GE3 DISTI # SIHB22N60ET1-GE3 | Vishay Intertechnologies | N-CHANNEL 600V (Alt: SIHB22N60ET1-GE3) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| SIHB22N60ET1-GE3 DISTI # SIHB22N60ET1-GE3 | Vishay Intertechnologies | N-CHANNEL 600V - Trays (Alt: SIHB22N60ET1-GE3) RoHS: Compliant Min Qty: 800 Container: Tray | Americas - 0 |
|
| SIHB22N60ET1-GE3. DISTI # 61AC1922 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:227W,No. of Pins:3Pins RoHS Compliant: Yes | 0 |
|
| SIHB22N60ET1-GE3 DISTI # 78-SIHB22N60ET1-GE3 | Vishay Intertechnologies | MOSFET 600V Vds E Series D2PAK TO-263 RoHS: Compliant | 637 |
|
| छवि | भाग # | विवरण |
|---|---|---|
|
Mfr.#: SIHB22N60EF-GE3 OMO.#: OMO-SIHB22N60EF-GE3 |
MOSFET Nch 600V Vds 30V Vgs TO-263; w/diode |
|
Mfr.#: SIHB22N60AEL-GE3 OMO.#: OMO-SIHB22N60AEL-GE3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
|
Mfr.#: SIHB22N60EL-GE3 OMO.#: OMO-SIHB22N60EL-GE3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
|
|
Mfr.#: SIHB22N60ET5-GE3 OMO.#: OMO-SIHB22N60ET5-GE3 |
MOSFET 600V Vds E Series D2PAK TO-263 |
|
Mfr.#: SIHB22N60AE-GE3 OMO.#: OMO-SIHB22N60AE-GE3-VISHAY |
MOSFET N-CH 600V 20A D2PAK |
|
Mfr.#: SIHB22N60E-GE3 OMO.#: OMO-SIHB22N60E-GE3-VISHAY |
MOSFET N-CH 600V 21A D2PAK |
|
|
Mfr.#: SIHB22N60ET1-GE3 OMO.#: OMO-SIHB22N60ET1-GE3-VISHAY |
MOSFET N-CH 600V 21A TO263 |
|
|
Mfr.#: SIHB22N60S-GE3 OMO.#: OMO-SIHB22N60S-GE3-VISHAY |
MOSFET N-CH 650V TO263 |
|
Mfr.#: SIHB22N60SE3 OMO.#: OMO-SIHB22N60SE3-1190 |
Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: SIHB22N60SGE3 OMO.#: OMO-SIHB22N60SGE3-1190 |
Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |