SIHB22N60EF-GE3

Mfr. #:: SIHB22N60EF-GE3
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET Nch 600V Vds 30V Vgs TO-263; w/diode
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SIHB22N60EF-GE3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:: SIHB22N60EF-GE3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: TO-263-3

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 600 V

आईडी - निरन्तर ड्रेन वर्तमान:: 19 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 182 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 2 V

Vgs - गेट-स्रोत भोल्टेज:: 30 V

Qg - गेट चार्ज:: 96 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 179 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

प्याकेजिङ:: ट्यूब

शृङ्खला:: EF

ट्रान्जिस्टर प्रकार:: 1 N-Channel

ब्रान्ड:: Vishay / Siliconix

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 5.8 S

पतन समय:: 25 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 21 ns

कारखाना प्याक मात्रा:: 50

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 58 ns

सामान्य टर्न-अन ढिलाइ समय:: 15 ns

Tags: SIHB22N60E, SIHB22N60, SIHB22, SIHB2, SIHB, SIH

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHB22N60EF-GE3 थप जानकारी

EF Series High Voltage Power MOSFETs: Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: AD5270BRMZ-50 OMO.#: OMO-AD5270BRMZ-50	Digital Potentiometer ICs 1024-pos 5v SPI 50-TP Mem Digi Rstat
	Mfr.#: NVB110N65S3F OMO.#: OMO-NVB110N65S3F	MOSFET SUPERFET3 650V D2PAK PKG
	Mfr.#: STM32H753XIH6 OMO.#: OMO-STM32H753XIH6	ARM Microcontrollers - MCU High-performance and DSP with DP-FPU, ARM Cortex-M7 MCU with 2MBytes Flash, 1MB RAM, 400 MHz CPU, Art Accelerator, L1 cache, external memory interface, large set of peripher
	Mfr.#: AD5270BRMZ-50 OMO.#: OMO-AD5270BRMZ-50-ANALOG-DEVICES-INC-ADI	Digital Potentiometer ICs 1024-pos 5v SPI 50-TP Mem Digi Rstat
	Mfr.#: STM32H753XIH6 OMO.#: OMO-STM32H753XIH6-STMICROELECTRONICS	TFBGA 14X14X1.2 P 0.
	Mfr.#: NVB110N65S3F OMO.#: OMO-NVB110N65S3F-ON-SEMICONDUCTOR	SUPERFET3 650V D2PAK PKG

उपलब्धता

स्टक:: Available
अर्डर मा:: 1984
मात्रा प्रविष्ट गर्नुहोस्:

SIHB22N60EF-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ३.५८~~; ~~US$ ३.५८~~

10: ~~US$ २.९७~~; ~~US$ २९.७०~~

100: ~~US$ २.४४~~; ~~US$ २४४.००~~

250: ~~US$ २.३७~~; ~~US$ ५९२.५०~~

500: ~~US$ २.१२~~; ~~US$ १ ०६०.००~~

1000: ~~US$ १.७९~~; ~~US$ १ ७९०.००~~

2500: ~~US$ १.७०~~; ~~US$ ४ २५०.००~~

5000: ~~US$ १.६३~~; ~~US$ ८ १५०.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

SIHB22N60E 7
SIHB22N60 13
SIHB22 15
SIHB2 28
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SIH 797

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SIHB22N60EF-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes