SIHB22N60E-E3

SIHB22N60E-E3
Mfr. #:
SIHB22N60E-E3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHB22N60E-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB22N60E-E3 DatasheetSIHB22N60E-E3 Datasheet (P4-P6)SIHB22N60E-E3 Datasheet (P7-P9)
ECAD Model:
थप जानकारी:
SIHB22N60E-E3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
650 V
आईडी - निरन्तर ड्रेन वर्तमान:
21 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
180 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
57 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
227 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
शृङ्खला:
E
ब्रान्ड:
Vishay / Siliconix
पतन समय:
35 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
27 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
66 ns
सामान्य टर्न-अन ढिलाइ समय:
18 ns
एकाइ वजन:
0.050717 oz
Tags
SIHB22N60E, SIHB22N60, SIHB22, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N-Channel 600 V 0.18 O 86 nC Surface Mount Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK
***et
Trans MOSFET N-CH 600V 21A 3-Pin D2PAK
***i-Key
MOSFET N-CH 600V 21A D2PAK
***ark
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHB22N60E-E3
DISTI # V36:1790_09219017
Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK
RoHS: Compliant
0
  • 1000000:$2.0180
  • 500000:$2.0230
  • 100000:$2.6420
  • 10000:$3.9000
  • 1000:$4.1200
SIHB22N60E-E3
DISTI # SIHB22N60E-E3-ND
Vishay SiliconixMOSFET N-CH 600V 21A D2PAK
Min Qty: 1
Container: Tube
368In Stock
  • 5000:$1.9891
  • 3000:$2.0668
  • 1000:$2.1756
  • 100:$3.0303
  • 25:$3.4964
  • 10:$3.6990
  • 1:$4.1200
SIHB22N60E-E3
DISTI # SIHB22N60E-E3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin D2PAK - Tape and Reel (Alt: SIHB22N60E-E3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
    SIHB22N60E-E3
    DISTI # 781-SIHB22N60E-E3
    Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant
    2025
    • 1:$4.1400
    • 10:$3.4300
    • 100:$2.8200
    • 250:$2.7300
    • 500:$2.4500
    • 1000:$2.0700
    • 2000:$1.9600
    SIHB22N60E-GE3
    DISTI # 781-SIHB22N60E-GE3
    Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant
    2740
    • 1:$4.1400
    • 10:$3.4300
    • 100:$2.8200
    • 250:$2.7300
    • 500:$2.4500
    • 1000:$2.0700
    • 2000:$1.9600
    SIHB22N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant
    Americas - 62600
    • 50:$2.6850
    • 100:$2.4360
    • 250:$2.2160
    • 500:$2.1440
    • 1000:$1.9360
    छवि भाग # विवरण
    SIHB22N60AE-GE3

    Mfr.#: SIHB22N60AE-GE3

    OMO.#: OMO-SIHB22N60AE-GE3

    MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60E-E3

    Mfr.#: SIHB22N60E-E3

    OMO.#: OMO-SIHB22N60E-E3

    MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60EL-GE3

    Mfr.#: SIHB22N60EL-GE3

    OMO.#: OMO-SIHB22N60EL-GE3

    MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB22N60ET5-GE3

    Mfr.#: SIHB22N60ET5-GE3

    OMO.#: OMO-SIHB22N60ET5-GE3

    MOSFET 600V Vds E Series D2PAK TO-263
    SIHB22N60ET1-GE3

    Mfr.#: SIHB22N60ET1-GE3

    OMO.#: OMO-SIHB22N60ET1-GE3

    MOSFET 600V Vds E Series D2PAK TO-263
    SIHB22N60S-E3

    Mfr.#: SIHB22N60S-E3

    OMO.#: OMO-SIHB22N60S-E3-126

    IGBT Transistors MOSFET 600V N-Channel Superjunction D2PAK
    SIHB22N60E-E3

    Mfr.#: SIHB22N60E-E3

    OMO.#: OMO-SIHB22N60E-E3-VISHAY

    RF Bipolar Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
    SIHB22N60AEL-GE3

    Mfr.#: SIHB22N60AEL-GE3

    OMO.#: OMO-SIHB22N60AEL-GE3-VISHAY

    MOSFET N-CHAN 600V
    SIHB22N60ET1-GE3

    Mfr.#: SIHB22N60ET1-GE3

    OMO.#: OMO-SIHB22N60ET1-GE3-VISHAY

    MOSFET N-CH 600V 21A TO263
    SIHB22N60SGE3

    Mfr.#: SIHB22N60SGE3

    OMO.#: OMO-SIHB22N60SGE3-1190

    Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1985
    मात्रा प्रविष्ट गर्नुहोस्:
    SIHB22N60E-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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    मात्रा
    एकाइ मूल्य
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    1
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    US$ ४.१४
    10
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    100
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    250
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    500
    US$ २.४५
    US$ १ २२५.००
    1000
    US$ २.०७
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    2000
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    5000
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    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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