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SCTW90N65G2V

SCTW90N65G2V
Mfr. #:
SCTW90N65G2V
निर्माता:
STMicroelectronics
विवरण:
SILICON CARBIDE POWER MOSFET 650
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SCTW90N65G2V डाटा पाना
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थप जानकारी:
SCTW90N65G2V थप जानकारी SCTW90N65G2V Product Details
उत्पादन विशेषता
विशेषता मान
Tags
SCTW, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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N-Channel 650 V 24 mOhm 565 W Through Hole Silicon Power Mosfet - HiP-247
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N-CHANNEL 650 V, 0.029 OHM TYP., 90 A SICMOSFET
***icroelectronics SCT
SiC MOSFETs, 650V ,119A, 24mΩ, HIP247
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
650 Silicon-Carbide (SiC) MOSFETs
STMicroelectronics 650 Silicon-Carbide (SiC) MOSFETs feature very low on-state resistance (RDS(on)) per area combined with excellent switching performance. This translates into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance per area even at high temperatures. SiC MOSFETs also feature excellent switching performance versus the best-in-class IGBTs in all temperature ranges. This simplifies the thermal design of power electronic systems.
भाग # Mfg। विवरण स्टक मूल्य
SCTW90N65G2V
DISTI # V36:1790_17702706		STMicroelectronicsN-channel 650 V SiC MOSFET0
    SCTW90N65G2V
    DISTI # 497-18351-ND    		STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
    RoHS: Compliant
    Container: Tube    		Temporarily Out of Stock
      SCTW90N65G2V
      DISTI # SCTW90N65G2V      		STMicroelectronicsN-CHANNEL 650 V, 0.029 OHM TYP., 90 A SICMOSFET - Rail/Tube (Alt: SCTW90N65G2V)
      RoHS: Not Compliant
      Min Qty: 30
      Container: Tube      		Americas - 0
      • 300:$38.2900
      • 150:$39.0900
      • 90:$40.8900
      • 60:$42.7900
      • 30:$44.8900
      SCTW90N65G2V
      DISTI # 02AH6930      		STMicroelectronicsPTD WBG & POWER RF0
      • 1:$37.5000
      SCTW90N65G2V
      DISTI # 511-SCTW90N65G2V      		STMicroelectronicsMOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
      RoHS: Compliant      		0
      • 1:$49.5000
      • 5:$48.3900
      • 10:$46.5000
      छवि भाग # विवरण
      SCTW90N65G2V

      Mfr.#: SCTW90N65G2V

      OMO.#: OMO-SCTW90N65G2V

      		 MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
      SCTW90N65G2V

      Mfr.#: SCTW90N65G2V

      OMO.#: OMO-SCTW90N65G2V-STMICROELECTRONICS

      		 SILICON CARBIDE POWER MOSFET 650
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      1500
      मात्रा प्रविष्ट गर्नुहोस्:
      SCTW90N65G2V को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ५६.२५
      US$ ५६.२५
      10
      US$ ५३.४४
      US$ ५३४.३८
      100
      US$ ५०.६२
      US$ ५ ०६२.५०
      500
      US$ ४७.८१
      US$ २३ ९०६.२५
      1000
      US$ ४५.००
      US$ ४५ ०००.००
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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