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SCTW90N65G2V

SCTW90N65G2V
Mfr. #:
SCTW90N65G2V
निर्माता:
STMicroelectronics
विवरण:
MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SCTW90N65G2V डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SCTW90N65G2V थप जानकारी SCTW90N65G2V Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
SiC
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
HIP247-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
650 V
आईडी - निरन्तर ड्रेन वर्तमान:
90 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
25 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.9 V
Vgs - गेट-स्रोत भोल्टेज:
10 V to 22 V
Qg - गेट चार्ज:
157 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 200 C
Pd - शक्ति अपव्यय:
390 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
शृङ्खला:
SCTW90N
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
STM माइक्रोइलेक्ट्रोनिक्स
पतन समय:
16 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
38 ns
कारखाना प्याक मात्रा:
600
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
58 ns
सामान्य टर्न-अन ढिलाइ समय:
26 ns
Tags
SCTW, SCT
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***va Crawler
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***ow.cn
Trans MOSFET N-CH SiC 650V 119A Automotive 3-Pin(3+Tab) HIP-247 Tube
***ure Electronics
N-Channel 650 V 24 mOhm 565 W Through Hole Silicon Power Mosfet - HiP-247
***nell
MOSFET, N-CH, 650V, 119A, 200DEG C, 565W;
***et
N-CHANNEL 650 V, 0.029 OHM TYP., 90 A SICMOSFET
***icroelectronics SCT
SiC MOSFETs, 650V ,119A, 24mΩ, HIP247
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
650 Silicon-Carbide (SiC) MOSFETs
STMicroelectronics 650 Silicon-Carbide (SiC) MOSFETs feature very low on-state resistance (RDS(on)) per area combined with excellent switching performance. This translates into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance per area even at high temperatures. SiC MOSFETs also feature excellent switching performance versus the best-in-class IGBTs in all temperature ranges. This simplifies the thermal design of power electronic systems.
भाग # Mfg। विवरण स्टक मूल्य
SCTW90N65G2V
DISTI # V36:1790_17702706		STMicroelectronicsN-channel 650 V SiC MOSFET0
    SCTW90N65G2V
    DISTI # 497-18351-ND    		STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
    RoHS: Compliant
    Container: Tube    		Temporarily Out of Stock
      SCTW90N65G2V
      DISTI # SCTW90N65G2V      		STMicroelectronicsN-CHANNEL 650 V, 0.029 OHM TYP., 90 A SICMOSFET - Rail/Tube (Alt: SCTW90N65G2V)
      RoHS: Not Compliant
      Min Qty: 30
      Container: Tube      		Americas - 0
      • 300:$38.2900
      • 150:$39.0900
      • 90:$40.8900
      • 60:$42.7900
      • 30:$44.8900
      SCTW90N65G2V
      DISTI # 02AH6930      		STMicroelectronicsPTD WBG & POWER RF0
      • 1:$37.5000
      SCTW90N65G2V
      DISTI # 511-SCTW90N65G2V      		STMicroelectronicsMOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
      RoHS: Compliant      		0
      • 1:$49.5000
      • 5:$48.3900
      • 10:$46.5000
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      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      5500
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      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
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      1
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      US$ ४६५.००
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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