 |  |  | |
| PartNumber | SIZF906DT-T1-GE3 | SIZF300DT-T1-GE3 | SIZF914DT-T1-GE3 |
| Description | MOSFET 30V Vds 20V Vgs PowerPAIR F 6 x 5 | MOSFET 30V Vds; 16/-12V Vgs PowerPAIR F 3.3x3.3 | MOSFET 25V Vds 20V Vgs PowerPAIR 6 x 5F |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAIR-6x5-8 | PowerPAIR3x3-4 | PowerPAIR-6x5F-8 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel, NPN |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 25 V |
| Id Continuous Drain Current | 60 A | 75 A, 141 A | 40 A, 60 A |
| Rds On Drain Source Resistance | 3 mOhms, 900 uOhms | 4.5 mOhms, 1.84 mOhms | 6.2 mOhms, 1.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.1 V | 1 V, 1.1 V | 1.1 V |
| Vgs Gate Source Voltage | - 16 V, 20 V | - 16 V, 20 V, - 12 V, 16 V | 4.5 V |
| Qg Gate Charge | 49 nC, 200 nC | 22 nC, 62 nC | 14 nC, 65 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 50 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 38 W, 83 W | 74 W | 26.6 W, 60 W |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET | TrenchFET | TrenchFET, SkyFET, PowerPAIR |
| Packaging | Reel | Reel | Reel |
| Series | SIZ | SIZ | SIZ |
| Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 130 S, 130 S | 60 S, 90 S | 45 S, 105 S |
| Fall Time | 40 ns, 30 ns | 7 ns, 12 ns | 10 ns, 15 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 80 ns, 60 ns | 40 ns, 53 ns | 50 ns, 60 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 20 ns, 65 ns | 23 ns, 30 ns | 15 ns, 45 ns |
| Typical Turn On Delay Time | 20 ns, 45 ns | 17 ns, 25 ns | 20 ns, 32 ns |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIZF916DT-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F | |
| SIZF918DT-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F | ||
| SIZF906DT-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAIR F 6 x 5 | ||
| SIZF920DT-T1-GE3 | MOSFET Dual 30V Vds PowerPAIR 6x5F | ||
| SIZF300DT-T1-GE3 | MOSFET 30V Vds; 16/-12V Vgs PowerPAIR F 3.3x3.3 | ||
| SIZF914DT-T1-GE3 | MOSFET 25V Vds 20V Vgs PowerPAIR 6 x 5F | ||
Vishay Semiconductors |
SIZF906ADT-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F | |
Vishay |
SIZF906ADT-T1-GE3 | MOSFET DUAL N-CHAN 30V | |
| SIZF916DT-T1-GE3 | MOSFET N-CH DUAL 30V | ||
| SIZF300DT-T1-GE3 | MOSFET DUAL N-CHAN 30V PPAIR 3X3 | ||
| SIZF906DT-T1-GE3 | MOSFET 2 N-CH 30V 60A POWERPAIR | ||
| SIZB4072 | नयाँ र मौलिक | ||
| SIZB60 | नयाँ र मौलिक | ||
| SIZB60 4062 | नयाँ र मौलिक | ||
| SIZB60-4072 | नयाँ र मौलिक | ||
| SIZB60-4102 | नयाँ र मौलिक | ||
| SIZB60-7062 | नयाँ र मौलिक | ||
| SIZB60-7072 | नयाँ र मौलिक | ||
| SIZBL20A 4P-SMD | नयाँ र मौलिक | ||
| SIZE 30, 55 CC. (20 EA./ | नयाँ र मौलिक | ||
| SIZE.030X060X.031 | नयाँ र मौलिक | ||
| SIZF906DT | नयाँ र मौलिक | ||
| SIZZ | नयाँ र मौलिक |