OMO ElectronicOMO Electronic
Expand menu
नमस्कार, साइन इन गर्नुहोस्मेरो खाता
0 कार्ट

SIZF916DT-T1-GE3

SIZF916DT-T1-GE3
Mfr. #:
SIZF916DT-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIZF916DT-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZF916DT-T1-GE3 DatasheetSIZF916DT-T1-GE3 Datasheet (P4-P6)SIZF916DT-T1-GE3 Datasheet (P7-P9)SIZF916DT-T1-GE3 Datasheet (P10-P12)SIZF916DT-T1-GE3 Datasheet (P13)
ECAD Model:
थप जानकारी:
SIZF916DT-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAIR-6x5F-8
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
एन-च्यानल, एनपीएन
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
40 A, 60 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
12.7 mOhms, 6.58 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.1 V
Vgs - गेट-स्रोत भोल्टेज:
4.5 V
Qg - गेट चार्ज:
14.6 nC, 62 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
26.6 W, 60 W
कन्फिगरेसन:
दोहोरो
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
शृङ्खला:
SIZ
ट्रान्जिस्टर प्रकार:
2 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
53 S, 91 S
पतन समय:
10 ns, 20 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
45 ns, 60 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
20 ns, 45 ns
सामान्य टर्न-अन ढिलाइ समय:
17 ns, 30 ns
Tags
SIZF91, SIZF9, SIZF, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
भाग # Mfg। विवरण स्टक मूल्य
SIZF916DT-T1-GE3
DISTI # SIZF916DT-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH DUAL 30V
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 6000:$0.6615
  • 3000:$0.6946
SIZF916DT-T1-GE3
DISTI # SIZF916DT-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH DUAL 30V
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6000In Stock
  • 1000:$0.7665
  • 500:$0.9709
  • 100:$1.1753
  • 10:$1.5070
  • 1:$1.6900
SIZF916DT-T1-GE3
DISTI # SIZF916DT-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH DUAL 30V
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6000In Stock
  • 1000:$0.7665
  • 500:$0.9709
  • 100:$1.1753
  • 10:$1.5070
  • 1:$1.6900
SIZF916DT-T1-GE3
DISTI # SIZF916DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET Array Dual N-CH 30V/30V 40A/60A 9-Pin PowerPAIR - Tape and Reel (Alt: SIZF916DT-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.6049
  • 30000:$0.6219
  • 18000:$0.6399
  • 12000:$0.6669
  • 6000:$0.6869
SIZF916DT-T1-GE3
DISTI # 59AC7467		Vishay IntertechnologiesDUAL N-CH 30-V (D-S) MOSFET W/SCHOTT0
  • 10000:$0.6000
  • 6000:$0.6150
  • 4000:$0.6380
  • 2000:$0.7090
  • 1000:$0.7800
  • 1:$0.8130
SIZF916DT-T1-GE3
DISTI # 81AC2801		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 60A, POWERPAIR,Transistor Polarity:Dual N Channel + Schottky,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0009ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage RoHS Compliant: Yes6050
  • 500:$1.0700
  • 250:$1.2200
  • 100:$1.3700
  • 50:$1.4900
  • 25:$1.6000
  • 10:$1.7200
  • 1:$1.9400
SIZF916DT-T1-GE3
DISTI # 78-SIZF916DT-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F
RoHS: Compliant		6000
  • 1:$1.9200
  • 10:$1.7000
  • 100:$1.3600
  • 500:$1.0600
  • 1000:$0.8510
  • 3000:$0.7740
SIZF916DT-T1-GE3
DISTI # 1783705		Vishay IntertechnologiesDUAL N-CHANNEL 30 V (D-S) MOSFET WITH SC, RL5990
  • 3000:£0.5500
SIZF916DT-T1-GE3
DISTI # 2932986		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 60A, POWERPAIR
RoHS: Compliant		6050
  • 1000:$1.2400
  • 500:$1.3200
  • 250:$1.5400
  • 100:$1.8800
  • 10:$2.4000
  • 1:$2.9000
SIZF916DT-T1-GE3
DISTI # 2932986		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 60A, POWERPAIR6050
  • 500:£0.7460
  • 250:£0.8530
  • 100:£0.9600
  • 25:£1.2200
  • 5:£1.3200
छवि भाग # विवरण
SIZF916DT-T1-GE3

Mfr.#: SIZF916DT-T1-GE3

OMO.#: OMO-SIZF916DT-T1-GE3

 MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F
SIZF916DT-T1-GE3

Mfr.#: SIZF916DT-T1-GE3

OMO.#: OMO-SIZF916DT-T1-GE3-VISHAY

 MOSFET N-CH DUAL 30V
उपलब्धता
स्टक:
Available
अर्डर मा:
1989
मात्रा प्रविष्ट गर्नुहोस्:
SIZF916DT-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.९२
US$ १.९२
10
US$ १.७०
US$ १७.००
100
US$ १.३६
US$ १३६.००
500
US$ १.०६
US$ ५३०.००
1000
US$ ०.८५
US$ ८५१.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
  • SUM70101EL 100 V P-Channel MOSFET
    SUM70101EL 100 V P-Channel MOSFET
    Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
  • SIRA20DP TrenchFET® Gen IV MOSFET
    SIRA20DP TrenchFET® Gen IV MOSFET
    Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
  • P-Channel MOSFETs
    P-Channel MOSFETs
    Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
  • SiP32452, SiP32453 Load Switch
    SiP32452, SiP32453 Load Switch
    Vishay's load switches have a low input logic control threshold and a fast turn on time.
  • Compare SIZF916DT-T1-GE3
    Compare SIZF916DT-T1-GE3
    SIZF914DTT1GE3 vs SIZF916DTT1GE3 vs SIZF918DTT1GE3
  • PowerPAIR®
    PowerPAIR®
    Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
More Newest Products
Top