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SIZF918DT-T1-GE3

SIZF918DT-T1-GE3
Mfr. #:
SIZF918DT-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIZF918DT-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIZF918DT-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAIR-6x5F-8
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
एन-च्यानल, एनपीएन
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
40 A, 60 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
6.8 mOhms, 2.7 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.1 V, 1 V
Vgs - गेट-स्रोत भोल्टेज:
4.5 V
Qg - गेट चार्ज:
14.6 nC, 37 nC
न्यूनतम परिचालन तापमान:
- 50 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
26.6 W, 50 W
कन्फिगरेसन:
दोहोरो
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET, SkyFET, PowerPAIR
प्याकेजिङ:
रील
शृङ्खला:
SIZ
ट्रान्जिस्टर प्रकार:
2 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
53 S, 87 S
पतन समय:
10 ns, 10 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
45 ns, 55 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
20 ns, 30 ns
सामान्य टर्न-अन ढिलाइ समय:
17 ns, 22 ns
Tags
SIZF91, SIZF9, SIZF, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
छवि भाग # विवरण
SIZF918DT-T1-GE3

Mfr.#: SIZF918DT-T1-GE3

OMO.#: OMO-SIZF918DT-T1-GE3

 MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F
उपलब्धता
स्टक:
Available
अर्डर मा:
1989
मात्रा प्रविष्ट गर्नुहोस्:
SIZF918DT-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.६०
US$ १.६०
10
US$ १.३२
US$ १३.२०
100
US$ १.०१
US$ १०१.००
500
US$ ०.८७
US$ ४३६.५०
1000
US$ ०.६९
US$ ६८९.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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