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| PartNumber | SQD100N03-3M4_GE3 | SQD100N03-3M2L_GE3 | SQD100N04-3M6-GE3 |
| Description | MOSFET 30V 100A 136W N-Channel MOSFET | MOSFET 30V 100A 136W N-Channel MOSFET | MOSFET RECOMMENDED ALT 78-SQD100N04-3M6_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 2.8 mOhms | 2.7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 124 nC | 116 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 136 W | 136 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 108 S | 122 S | - |
| Fall Time | 10 ns | 10 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | 10 ns | - |
| Factory Pack Quantity | 2000 | 2000 | 2000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 37 ns | 42 ns | - |
| Typical Turn On Delay Time | 13 ns | 10 ns | - |
| Unit Weight | 0.050717 oz | 0.050717 oz | - |
| Height | - | 2.38 mm | - |
| Length | - | 6.73 mm | - |
| Width | - | 6.22 mm | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQD100N04-3m6_GE3 | MOSFET N-Channel 40V AEC-Q101 Qualified | |
| SQD100N04-3m6L_GE3 | MOSFET N-Channel 40V AEC-Q101 Qualified | ||
| SQD100N03-3M4_GE3 | MOSFET 30V 100A 136W N-Channel MOSFET | ||
| SQD100N03-3M2L_GE3 | MOSFET 30V 100A 136W N-Channel MOSFET | ||
| SQD100N04_3M6T4GE3 | MOSFET 40V Vds 20V Vgs TO-252 | ||
| SQD100N04-3M6-GE3 | MOSFET RECOMMENDED ALT 78-SQD100N04-3M6_GE3 | ||
| SQD100N04-3M6L-GE3 | MOSFET RECOMMENDED ALT 78-SQD100N04-3M6LGE | ||
Vishay |
SQD100N02_3M5L4GE3 | MOSFET 20V Vds 20V Vgs TO-252 | |
| SQD100N04-3M6L_GE3 | MOSFET N-CH 40V 100A TO252AA | ||
| SQD100N03-3M2L_GE3 | MOSFET N-CH 30V 100A TO252AA | ||
| SQD100N03-3M4_GE3 | MOSFET N-CH 30V 100A TO252AA | ||
| SQD100N04-3M6_GE3 | MOSFET N-CH 40V 100A TO252AA | ||
| SQD100N02-3M5L_GE3 | MOSFET N-CH 20V 100A TO252AA | ||
| SQD100N04-3M6L-GE3 | IGBT Transistors MOSFET N-Channel 40V Automotive MOSFET | ||
| SQD100N03-3M2L-GE3 | IGBT Transistors MOSFET 30V 100A 136W | ||
| SQD100A40 | नयाँ र मौलिक | ||
| SQD100A60 | नयाँ र मौलिक | ||
| SQD100A60S | नयाँ र मौलिक | ||
| SQD100M60 | नयाँ र मौलिक | ||
| SQD100N02-3M5L-T4GE3 | नयाँ र मौलिक | ||
| SQD100N03-3M2L | नयाँ र मौलिक | ||
| SQD100N03-3M4 | नयाँ र मौलिक | ||
| SQD100N04-3M6 | नयाँ र मौलिक | ||
| SQD100N04-3M6L | नयाँ र मौलिक | ||
| SQD100N043M6LGE3 | Power Field-Effect Transistor, 100A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |