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SQD100N03-3M4_GE3

SQD100N03-3M4_GE3
Mfr. #:
SQD100N03-3M4_GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 30V 100A 136W N-Channel MOSFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SQD100N03-3M4_GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQD100N03-3M4_GE3 DatasheetSQD100N03-3M4_GE3 Datasheet (P4-P6)SQD100N03-3M4_GE3 Datasheet (P7-P9)
ECAD Model:
थप जानकारी:
SQD100N03-3M4_GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-252-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
100 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
2.8 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.5 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
124 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
136 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
योग्यता:
AEC-Q101
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
शृङ्खला:
SQ
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
108 S
पतन समय:
10 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
10 ns
कारखाना प्याक मात्रा:
2000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
37 ns
सामान्य टर्न-अन ढिलाइ समय:
13 ns
एकाइ वजन:
0.050717 oz
Tags
SQD100N03, SQD100N, SQD100, SQD10, SQD1, SQD
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
N-CHANNEL 30-V (D-S) 175C MOSFET
***i-Key
MOSFET N-CH 30V 100A TO252AA
*** Europe
N-CH SINGLE 30V DPAK AECQ
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
भाग # Mfg। विवरण स्टक मूल्य
SQD100N03-3M4_GE3
DISTI # SQD100N03-3M4_GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 100A TO252AA
RoHS: Not compliant
Min Qty: 1
Container: Cut Tape (CT)		1997In Stock
  • 1000:$0.7665
  • 500:$0.9709
  • 100:$1.1753
  • 10:$1.5070
  • 1:$1.6900
SQD100N03-3M4_GE3
DISTI # SQD100N03-3M4_GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 100A TO252AA
RoHS: Not compliant
Min Qty: 1
Container: Digi-Reel®		1997In Stock
  • 1000:$0.7665
  • 500:$0.9709
  • 100:$1.1753
  • 10:$1.5070
  • 1:$1.6900
SQD100N03-3M4_GE3
DISTI # SQD100N03-3M4_GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 100A TO252AA
RoHS: Not compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 6000:$0.6615
  • 2000:$0.6946
SQD100N03-3M4_GE3
DISTI # SQD100N03-3M4_GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 100A 3-Pin TO-252 T/R - Tape and Reel (Alt: SQD100N03-3M4_GE3)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 20000:$0.6049
  • 12000:$0.6219
  • 8000:$0.6399
  • 4000:$0.6669
  • 2000:$0.6869
SQD100N03-3M4_GE3
DISTI # 78-SQD100N03-3M4_GE3		Vishay IntertechnologiesMOSFET 30V 100A 136W N-Channel MOSFET
RoHS: Compliant		1853
  • 1:$1.6400
  • 10:$1.3600
  • 100:$1.0500
  • 500:$0.9190
  • 1000:$0.7620
  • 2000:$0.7090
  • 4000:$0.6830
  • 10000:$0.6570
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उपलब्धता
स्टक:
Available
अर्डर मा:
1984
मात्रा प्रविष्ट गर्नुहोस्:
SQD100N03-3M4_GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.६५
US$ १.६५
10
US$ १.४९
US$ १४.९०
100
US$ १.१५
US$ ११५.००
500
US$ ०.९७
US$ ४८३.५०
1000
US$ ०.७६
US$ ७६०.००
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