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SIHP38N60E-GE3

SIHP38N60E-GE3
Mfr. #:
SIHP38N60E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 600V Vds 30V Vgs TO-220AB
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHP38N60E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHP38N60E-GE3 DatasheetSIHP38N60E-GE3 Datasheet (P4-P6)SIHP38N60E-GE3 Datasheet (P7)
ECAD Model:
थप जानकारी:
SIHP38N60E-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220AB-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
43 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
56 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
122 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
313 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
शृङ्खला:
E
ब्रान्ड:
Vishay / Siliconix
पतन समय:
50 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
58 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
116 ns
सामान्य टर्न-अन ढिलाइ समय:
33 ns
एकाइ वजन:
0.063493 oz
Tags
SIHP3, SIHP, SIH
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 43A 3-Pin(3+Tab) TO-220AB
***i-Key
MOSFET N-CH 600V 43A TO220AB
***ark
N-Channel 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHP38N60E-GE3
DISTI # V99:2348_17597460		Vishay IntertechnologiesPower MOSFET180
  • 1000:$3.5200
  • 100:$4.7600
  • 25:$5.4060
  • 10:$5.8789
  • 1:$7.2248
SIHP38N60E-GE3
DISTI # SIHP38N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 43A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		626In Stock
  • 1000:$3.7521
  • 100:$4.9472
  • 25:$5.6976
  • 10:$5.9760
  • 1:$6.6100
SIHP38N60E-GE3
DISTI # 31992690		Vishay IntertechnologiesPower MOSFET550
  • 4000:$3.4986
  • 2000:$3.6531
  • 1000:$3.7521
SIHP38N60E-GE3
DISTI # 31985472		Vishay IntertechnologiesPower MOSFET180
  • 1000:$3.5200
  • 100:$4.7600
  • 25:$5.4060
  • 10:$5.8789
  • 2:$7.2248
SIHP38N60E-GE3
DISTI # SIHP38N60E-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 600V 43A 3-Pin TO-220AB - Tape and Reel (Alt: SIHP38N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 1000
  • 10000:$3.2900
  • 6000:$3.3900
  • 4000:$3.4900
  • 2000:$3.6900
  • 1000:$3.7900
SIHP38N60E-GE3
DISTI # SIHP38N60E-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 600V 43A 3-Pin TO-220AB (Alt: SIHP38N60E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€3.2900
  • 500:€3.3900
  • 50:€3.4900
  • 100:€3.4900
  • 25:€3.8900
  • 10:€4.7900
  • 1:€6.0900
SIHP38N60E-GE3
DISTI # 78-SIHP38N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
RoHS: Compliant		929
  • 1:$6.6200
  • 10:$5.9600
  • 25:$5.4300
  • 100:$4.9000
  • 250:$4.5100
  • 500:$4.1100
छवि भाग # विवरण
FCP067N65S3

Mfr.#: FCP067N65S3

OMO.#: OMO-FCP067N65S3

 MOSFET 650V 44A N-Channel SuperFET MOSFET
695402250128

Mfr.#: 695402250128

OMO.#: OMO-695402250128

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FCP067N65S3

Mfr.#: FCP067N65S3

OMO.#: OMO-FCP067N65S3-ON-SEMICONDUCTOR

 MOSFET N-CH 650V 44A TO220
AT42QT1010-TSHR

Mfr.#: AT42QT1010-TSHR

OMO.#: OMO-AT42QT1010-TSHR-MICROCHIP-TECHNOLOGY

 Capacitive Touch Sensors One-Channel Touch Sensor IC
695402250128

Mfr.#: 695402250128

OMO.#: OMO-695402250128-WURTH-ELECTRONICS

 CONN, HERMAPHRODITIC, 2POS, 1ROW, 2.54MM
उपलब्धता
स्टक:
929
अर्डर मा:
2912
मात्रा प्रविष्ट गर्नुहोस्:
SIHP38N60E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ६.६२
US$ ६.६२
10
US$ ५.९६
US$ ५९.६०
25
US$ ५.४३
US$ १३५.७५
100
US$ ४.९०
US$ ४९०.००
250
US$ ४.५१
US$ १ १२७.५०
500
US$ ४.११
US$ २ ०५५.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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