 | |  | |
| PartNumber | SIHP100N60E-GE3 | SIHP050N60E-GE3 | SIHP065N60E-GE3 |
| Description | MOSFET 650V Vds; 30V Vgs TO-220AB | MOSFET 650V Vds 30V Vgs TO-220AB | MOSFET 600V Vds 30V Vgs TO-220AB |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220AB-3 | TO-220AB-3 | TO-220AB-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 30 A | 51 A | 40 A |
| Rds On Drain Source Resistance | 100 mOhms | 50 mOhms | 57 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 3 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 50 nC | 130 nC | 98 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 208 W | 278 W | 250 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | - | - |
| Series | E | E | E |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 11 S | 12 S | - |
| Fall Time | 20 ns | 48 ns | 13 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 34 ns | 82 ns | 46 ns |
| Factory Pack Quantity | 50 | - | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 33 ns | 67 ns | 54 ns |
| Typical Turn On Delay Time | 21 ns | 35 ns | 28 ns |
| Unit Weight | - | - | 0.063493 oz |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHP100N60E-GE3 | MOSFET 650V Vds; 30V Vgs TO-220AB | |
| SIHP050N60E-GE3 | MOSFET 650V Vds 30V Vgs TO-220AB | ||
| SIHP065N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP11N80E-GE3 | MOSFET 800V Vds 30V Vgs TO-220AB | ||
| SIHP12N60E-E3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP15N60E-E3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP15N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP12N50C-E3 | MOSFET N-Channel 500V | ||
| SIHP12N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP15N50E-GE3 | MOSFET 500V Vds 30V Vgs TO-220AB | ||
| SIHP14N50D-GE3 | MOSFET 500V Vds 30V Vgs TO-220AB | ||
| SIHP10N40D-E3 | MOSFET 400V Vds 30V Vgs TO-220AB | ||
| SIHP12N65E-GE3 | MOSFET 650V Vds 30V Vgs TO-220AB | ||
| SIHP125N60EF-GE3 | MOSFET EF Series Power MOSFET With Fast Body Diode | ||
| SIHP120N60E-GE3 | MOSFET 650V Vds; 30V Vgs TO-220AB | ||
| SIHP105N60EF-GE3 | MOSFET EF Series Power MOSFET With Fast Body Diode | ||
| SIHP12N50E-GE3 | MOSFET 500V Vds 30V Vgs TO-220AB | ||
| SIHP14N50D-E3 | MOSFET 500V Vds 30V Vgs TO-220AB | ||
| SIHP10N40D-GE3 | MOSFET 400V Vds 30V Vgs TO-220AB | ||
| SIHP14N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
Vishay |
SIHP12N65E-GE3 | IGBT Transistors MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS | |
| SIHP10N40D-GE3 | IGBT Transistors MOSFET 450V 600mOhms@10V 10A N-Ch D-SRS | ||
| SIHP12N60E-GE3 | IGBT Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS | ||
| SIHP15N50E-GE3 | IGBT Transistors MOSFET N-Channel 500V | ||
| SIHP12N50E-GE3 | IGBT Transistors MOSFET N-Channel 500V | ||
| SIHP14N50D-GE3 | RF Bipolar Transistors MOSFET MOSFET N-CHANNEL 500V | ||
| SIHP11N80E-GE3 | MOSFET N-CH 800V 12A TO220AB | ||
| SIHP065N60E-GE3 | MOSFET N-CH 600V 40A TO220AB | ||
| SIHP10N40D-E3 | MOSFET N-CH 400V 10A TO-220AB | ||
| SIHP12N50C-E3 | MOSFET N-CH 500V 12A TO-220AB | ||
| SIHP12N60E-E3 | MOSFET N-CH 600V 12A TO220AB | ||
| SIHP14N50D-E3 | MOSFET N-CH 500V 14A TO-200AB | ||
| SIHP15N60E-E3 | MOSFET N-CH 600V 15A TO220AB | ||
| SIHP050N60E-GE3 | E Series Power MOSFET TO220AB, 50 m @ 10V | ||
| SIHP100N60E-GE3 | E Series Power MOSFET TO-220AB, 100 m @ 10V | ||
| SIHP120N60E-GE3 | E Series Power MOSFET TO-220AB, 120 m @ 10V | ||
| SIHP14N60E-GE3 | Power MOSFET | ||
| SIHP10N40D | नयाँ र मौलिक | ||
| SIHP11N80E | नयाँ र मौलिक | ||
| SIHP1260EGE3 | नयाँ र मौलिक | ||
| SIHP12N50 | नयाँ र मौलिक | ||
| SIHP12N50C | नयाँ र मौलिक | ||
| SIHP12N50C-E3,P12N50C | नयाँ र मौलिक | ||
| SIHP12N50CE3 | Power Field-Effect Transistor, 12A I(D), 500V, 0.555ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| SIHP12N60E | नयाँ र मौलिक | ||
| SIHP12N65E | नयाँ र मौलिक | ||
| SIHP14N50D | नयाँ र मौलिक | ||
| SIHP14N60EGE3 | Power Field-Effect Transistor, 13A I(D), 600V, 0.309ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| SIHP15N50E | नयाँ र मौलिक | ||
| SIHP15N60E | नयाँ र मौलिक |