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SIHP12N50C-E3

SIHP12N50C-E3
Mfr. #:
SIHP12N50C-E3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET N-Channel 500V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHP12N50C-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHP12N50C-E3 DatasheetSIHP12N50C-E3 Datasheet (P4-P6)SIHP12N50C-E3 Datasheet (P7-P9)SIHP12N50C-E3 Datasheet (P10)
ECAD Model:
थप जानकारी:
SIHP12N50C-E3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220AB-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
500 V
आईडी - निरन्तर ड्रेन वर्तमान:
12 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
555 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
5 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
32 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
208 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
उचाइ:
15.49 mm
लम्बाइ:
10.41 mm
चौडाइ:
4.7 mm
ब्रान्ड:
Vishay / Siliconix
पतन समय:
6 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
35 ns
कारखाना प्याक मात्रा:
50
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
23 ns
सामान्य टर्न-अन ढिलाइ समय:
18 ns
एकाइ वजन:
0.211644 oz
Tags
SIHP12N50C, SIHP12N5, SIHP12N, SIHP12, SIHP1, SIHP, SIH
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 500 V 0.555 O 48 nC Flange Mount Power Mosfet - TO-220AB
***ical
Trans MOSFET N-CH Si 500V 12A 3-Pin(3+Tab) TO-220AB
***ment14 APAC
MOSFET,N CH,DIODE,500V,12A,TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.46ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:208W; Voltage Vgs Max:30V
SiHx12N50C-E3 500V N-Channel Power MOSFETs
Vishay Siliconix SiHx12N50C-E3 500V, 12A N-Channel Power MOSFETs with ultra-low 0.555-Ω maximum on-resistance at a 10V gate drive and an improved gate charge of 48nC. The low on-resistance of the Vishay Siliconix SiHP12N50C-E3 (TO-220 package), SiHF12N50C-E3 (TO-220 FULLPAK), and SiHB12N50C-E3 (D²PAK) translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, pulse width modulation (PWM) half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PCs, LCD TVs, and open-frame power supplies. SiHx12N50C-E3 500V Power MOSFETs feature a gate charge of 48nC. Gate charge times on-resistance is a low 26.54Ω-nC. These Vishay Siliconix Power MOSFETs are produced using Vishay Planar Cell technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation mode. The SiHP12N50C-E3, SiHG12N50C-E3, and SiHB12N50C-E3 offer improved switching speed and conduction losses compared to previous-generation MOSFETs.Learn More
भाग # Mfg। विवरण स्टक मूल्य
SIHP12N50C-E3
DISTI # V36:1790_09218728		Vishay IntertechnologiesTrans MOSFET N-CH Si 500V 12A 3-Pin(3+Tab) TO-220AB
RoHS: Compliant		0
    SIHP12N50C-E3
    DISTI # SIHP12N50C-E3-ND    		Vishay SiliconixMOSFET N-CH 500V 12A TO-220AB
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		579In Stock
    • 3000:$2.4578
    • 1000:$2.5872
    • 500:$3.0677
    • 100:$3.7884
    • 10:$4.6200
    • 1:$5.1700
    SIHP12N50C-E3
    DISTI # SIHP12N50C-E3    		Vishay IntertechnologiesTrans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220AB - Tape and Reel (Alt: SIHP12N50C-E3)
    RoHS: Not Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 1000:$2.3900
    • 2000:$2.2900
    • 4000:$2.1900
    • 6000:$2.1900
    • 10000:$2.0900
    SIHP12N50C-E3
    DISTI # SIHP12N50C-E3    		Vishay IntertechnologiesTrans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220AB (Alt: SIHP12N50C-E3)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€2.8900
    • 10:€2.1900
    • 25:€1.7900
    • 50:€1.5900
    • 100:€1.5900
    • 500:€1.5900
    • 1000:€1.4900
    SIHP12N50C-E3
    DISTI # 23T8470    		Vishay IntertechnologiesMOSFET,N CHANNEL,DIODE,500V,12A,TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.46ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,MSL:- RoHS Compliant: Yes5
      SIHP12N50C-E3
      DISTI # 781-SIHP12N50C-E3      		Vishay IntertechnologiesMOSFET N-Channel 500V
      RoHS: Compliant      		150
      • 1:$4.7100
      • 10:$3.9000
      • 100:$3.2100
      • 250:$3.1100
      • 500:$2.7900
      SIHP12N50CE3Vishay IntertechnologiesPower Field-Effect Transistor, 12A I(D), 500V, 0.555ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant      		Europe - 500
        SIHP12N50C-E3
        DISTI # 1858987        		Vishay IntertechnologiesMOSFET,N CH,DIODE,500V,12A,TO-220AB
        RoHS: Compliant        		59
        • 500:£1.9200
        • 250:£2.1400
        • 100:£2.2100
        • 10:£2.6800
        • 1:£4.0000
        SIHP12N50C-E3Vishay IntertechnologiesMOSFET N-Channel 500V
        RoHS: Compliant        		Americas -
          SIHP12N50C-E3
          DISTI # 1858987          		Vishay IntertechnologiesMOSFET,N CH,DIODE,500V,12A,TO-220AB
          RoHS: Compliant          		5
          • 500:$4.2000
          • 250:$4.6900
          • 100:$4.8400
          • 10:$5.8800
          • 1:$7.1000
          छवि भाग # विवरण
          SMMBT4401LT1G

          Mfr.#: SMMBT4401LT1G

          OMO.#: OMO-SMMBT4401LT1G

          		 Bipolar Transistors - BJT SMAL SGNL TRANS MINI BLK
          SIHFR420TRL-GE3

          Mfr.#: SIHFR420TRL-GE3

          OMO.#: OMO-SIHFR420TRL-GE3

          		 MOSFET 500V Vds 20V Vgs DPAK (TO-252)
          UF4007-E3/73

          Mfr.#: UF4007-E3/73

          OMO.#: OMO-UF4007-E3-73

          		 Rectifiers 1000 Volt 1.0A 75ns 30 Amp IFSM
          STM32L431RBT6

          Mfr.#: STM32L431RBT6

          OMO.#: OMO-STM32L431RBT6

          		 ARM Microcontrollers - MCU 16/32-BITS MICROS
          ERJ-6ENF7501V

          Mfr.#: ERJ-6ENF7501V

          OMO.#: OMO-ERJ-6ENF7501V

          		 Thick Film Resistors - SMD 0805 7.5Kohms 1% AEC-Q200
          SMMBT4401LT1G

          Mfr.#: SMMBT4401LT1G

          OMO.#: OMO-SMMBT4401LT1G-ON-SEMICONDUCTOR

          		 Bipolar Transistors - BJT SMAL SGNL TRANS MINI BLK
          STM32L431RBT6

          Mfr.#: STM32L431RBT6

          OMO.#: OMO-STM32L431RBT6-STMICROELECTRONICS

          		 IC MCU 32BIT 128KB FLASH 64LQFP
          ERJ-6ENF7501V

          Mfr.#: ERJ-6ENF7501V

          OMO.#: OMO-ERJ-6ENF7501V-PANASONIC

          		 Thick Film Resistors - SMD 0805 7.5Kohms 1% Tol
          BC547B

          Mfr.#: BC547B

          OMO.#: OMO-BC547B-ON-SEMICONDUCTOR

          		 Bipolar Transistors - BJT NPN 45V 100mA HFE/45
          RC0805FR-072K2L

          Mfr.#: RC0805FR-072K2L

          OMO.#: OMO-RC0805FR-072K2L-YAGEO

          		 Thick Film Resistors - SMD 2.2K OHM 1%
          उपलब्धता
          स्टक:
          739
          अर्डर मा:
          2722
          मात्रा प्रविष्ट गर्नुहोस्:
          SIHP12N50C-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
          सन्दर्भ मूल्य (USD)
          मात्रा
          एकाइ मूल्य
          विस्तार मूल्य
          1
          US$ ४.७१
          US$ ४.७१
          10
          US$ ३.९०
          US$ ३९.००
          100
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          250
          US$ ३.११
          US$ ७७७.५०
          500
          US$ २.७९
          US$ १ ३९५.००
          1000
          US$ २.५८
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          2500
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          US$ ६ १२५.००
          2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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