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IXFN55N50F

IXFN55N50F
Mfr. #:
IXFN55N50F
निर्माता:
Littelfuse
विवरण:
MOSFET IXFN55N50F 500V 55A HIPERFET F-Class HiPerRF Capable MOSFETs
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IXFN55N50F डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN55N50F Datasheet
ECAD Model:
थप जानकारी:
IXFN55N50F थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
IXYS
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
चेसिस माउन्ट
प्याकेज / केस:
SOT-227-4
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
500 V
आईडी - निरन्तर ड्रेन वर्तमान:
55 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
85 mOhms
Vgs - गेट-स्रोत भोल्टेज:
20 V
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
600 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
उचाइ:
9.6 mm
लम्बाइ:
38.2 mm
शृङ्खला:
HiPerRF
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
25.07 mm
ब्रान्ड:
IXYS
पतन समय:
9.6 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
20 ns
कारखाना प्याक मात्रा:
10
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
45 ns
सामान्य टर्न-अन ढिलाइ समय:
24 ns
एकाइ वजन:
1.058219 oz
Tags
IXFN5, IXFN, IXF
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 500V 55A SOT227B
***nell
MOSFET, N, RF, SOT-227B
***el Nordic
Contact for details
***ark
Mosfet, N, Rf, Sot-227B; Drain Source Voltage Vds:500V; Continuous Drain Current Id:55A; Power Dissipation Pd:600W; Operating Frequency Min:-; Operating Frequency Max:500Khz; Rf Transistor Case:sot-227B; No. Of Pins:4Pins; Msl:- Rohs Compliant: Yes
Power MOSFETs
IXYS Power MOSFETs are designed for RF applications below 100MHz, linear applications, and high-power, high-frequency, and high-speed switching applications. These Power MOSFETs are available in a wide variety of standard industrial package options for a broad spectrum of market needs, electrical design requirements, and mechanical and mounting specifications.
भाग # Mfg। विवरण स्टक मूल्य
IXFN55N50F
DISTI # V36:1790_14391218		IXYS CorporationTrans MOSFET N-CH Si 500V 55A 4-Pin SOT-227B
RoHS: Compliant		0
  • 1000:$14.6900
  • 500:$16.9700
  • 100:$22.7800
  • 10:$39.6400
IXFN55N50F
DISTI # IXFN55N50F-ND		IXYS CorporationMOSFET N-CH 500V 55A SOT227B
RoHS: Compliant
Min Qty: 1
Container: Tube		98In Stock
  • 100:$29.9884
  • 30:$32.2660
  • 10:$35.1130
  • 1:$37.9600
IXFN55N50F
DISTI # 42M1930		IXYS CorporationMOSFET, N, RF, SOT-227B,Drain Source Voltage Vds:500V,Continuous Drain Current Id:55A,Power Dissipation Pd:600W,Operating Frequency Min:-,Operating Frequency Max:500kHz,RF Transistor Case:SOT-227B,No. of Pins:4Pins,MSL:- RoHS Compliant: Yes0
    IXFN55N50F
    DISTI # 747-IXFN55N50F    		IXYS CorporationMOSFET IXFN55N50F 500V 55A HIPERFET F-Class HiPerRF Capable MOSFETs
    RoHS: Compliant    		16
    • 1:$43.6600
    • 5:$41.7200
    • 10:$40.3800
    • 50:$37.1100
    • 100:$34.4900
    IXFN55N50F
    DISTI # 1347748    		IXYS CorporationMOSFET, N, RF, SOT-227B
    RoHS: Compliant    		0
    • 100:$45.2000
    • 30:$48.6300
    • 10:$52.9200
    • 1:$57.2100
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    उपलब्धता
    स्टक:
    16
    अर्डर मा:
    1999
    मात्रा प्रविष्ट गर्नुहोस्:
    IXFN55N50F को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ४३.६६
    US$ ४३.६६
    5
    US$ ४१.७२
    US$ २०८.६०
    10
    US$ ४०.३८
    US$ ४०३.८०
    50
    US$ ३७.११
    US$ १ ८५५.५०
    100
    US$ ३४.४९
    US$ ३ ४४९.००
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