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IXYH30N120C3D1

IXYH30N120C3D1
Mfr. #:
IXYH30N120C3D1
निर्माता:
Littelfuse
विवरण:
IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IXYH30N120C3D1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYH30N120C3D1 DatasheetIXYH30N120C3D1 Datasheet (P4-P6)IXYH30N120C3D1 Datasheet (P7)
ECAD Model:
थप जानकारी:
IXYH30N120C3D1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
IXYS
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेज / केस:
TO-247AD-3
माउन्टिङ शैली:
प्वाल मार्फत
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
1200 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
3.7 V
अधिकतम गेट एमिटर भोल्टेज:
30 V
25 C मा निरन्तर कलेक्टर वर्तमान:
66 A
Pd - शक्ति अपव्यय:
416 W
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
शृङ्खला:
IXYH30N120
प्याकेजिङ:
ट्यूब
निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:
66 A
ब्रान्ड:
IXYS
गेट-एमिटर चुहावट वर्तमान:
100 nA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
30
उपश्रेणी:
IGBTs
व्यापार नाम:
XPT
एकाइ वजन:
1.340411 oz
Tags
IXYH30N120C, IXYH30N12, IXYH30N1, IXYH3, IXYH, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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GenX3™ XPT™ IGBT 1200 V 64 A Flange Mount High-Speed IGBT - TO-247AD
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***trelec
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***S
new, original packaged
***el Nordic
Contact for details
***ark
1200V Trench IGBT for Generic Industrial Applications, Size 4.2 w/ Diode (Extended Lead), TUBE
***ical
Trans IGBT Chip N-CH 1200V 85A 320000mW 3-Pin(3+Tab) TO-247AD Tube
***-Wing Technology
Tube Through Hole Trench ROHS3Compliant IGBT Transistor 2V @ 15V 30A 85A 320W 153ns
***ineon SCT
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package, TO247COPAK-3, RoHS
***ure Electronics
IRG7PH42UD-EP Series 1200 V 85 A Insulated Gate Bipolar Transistor - TO-247AD
***el Electronic
Alarms, Buzzers, and Sirens Transducer, Externally Driven Through Hole 1 (Unlimited) Piezo PC Pins Zero-Peak Signal 0.496Dia 12.60mm 4kHz 0.291 7.40mm AUDIO PIEZO TRANSDUCER 30V TH
***ineon SCT
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package, TO247COPAK-3, RoHS
***ure Electronics
IRG7PH42UDPBF Series 1200 V 85 A Insulated Gate Bipolar Transistor - TO-247AC
***(Formerly Allied Electronics)
1200V Trench IGBT For Generic Industrial Applications, Size 4.2 w/Diode
***ment14 APAC
IGBT,N CH,DIODE,1200V,85A,TO-247AC; Transistor Type:IGBT; DC Collector Current:85A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:320W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:320W
***i-Key
IGBT 1200V 75A 380W TO247
***ark
Igbt, Single, 1.2Kv, 75A, To-247; Dc Collector Current:75A; Collector Emitter Saturation Voltage Vce(On):2.9V; Power Dissipation Pd:380W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ark
Transistor, Igbt, 1.2Kv, 75A, To-247 Rohs Compliant: Yes
***i-Key
IGBT 1200V 75A 380W TO247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***S
new, original packaged
***el Nordic
Contact for details
***p One Stop Global
Trans IGBT Chip N-CH 1200V 60A 300000mW 3-Pin(3+Tab) TO-247AD Tube
***ure Electronics
IRGP30B120KD-EP Series 1200 V 30 A N-Channel Motor Control Co-Pack IGBT TO-247AD
***nell
IGBT, W/DIODE, 1200V, 60A, TO247AD; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.2kV; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: IRGP Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 60A; Fall Time Max: 75ns; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 300W; Pulsed Current Icm: 120A; Rise Time: 25ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 1.2kV
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
भाग # Mfg। विवरण स्टक मूल्य
IXYH30N120C3D1
DISTI # IXYH30N120C3D1-ND		IXYS CorporationIGBT 1200V 66A 416W TO247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$9.5357
IXYH30N120C3D1
DISTI # 747-IXYH30N120C3D1		IXYS CorporationIGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
RoHS: Compliant		53
  • 1:$11.6300
  • 10:$10.4700
  • 25:$9.5400
  • 50:$8.7100
  • 100:$8.6100
  • 250:$7.8400
  • 500:$7.2100
  • 1000:$6.2800
IXYH30N120C3D1
DISTI # 8080271P		IXYS CorporationIGBT 1200V 30A XPT GENX3 W/DIODE TO247AD, TU9
  • 10:£7.1500
  • 20:£6.9800
  • 50:£6.8100
  • 250:£5.6600
छवि भाग # विवरण
MGJ2D051509SC

Mfr.#: MGJ2D051509SC

OMO.#: OMO-MGJ2D051509SC-MURATA-POWER-SOLUTIONS

 Isolated DC/DC Converters 2W 5Vin 15/-8.7Vout 80/40mA SIP
उपलब्धता
स्टक:
33
अर्डर मा:
2016
मात्रा प्रविष्ट गर्नुहोस्:
IXYH30N120C3D1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ११.६३
US$ ११.६३
10
US$ १०.४७
US$ १०४.७०
25
US$ ९.५४
US$ २३८.५०
50
US$ ८.७१
US$ ४३५.५०
100
US$ ८.६१
US$ ८६१.००
250
US$ ७.८४
US$ १ ९६०.००
500
US$ ७.२१
US$ ३ ६०५.००
1000
US$ ६.२८
US$ ६ २८०.००
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