PartNumber | IXYH30N120C4 | IXYH30N120C3 | IXYH30N120C3D1 |
Description | Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD | IGBT Transistors 1200V XPT GenX3 IGBT | IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
RoHS | Y | - | Y |
Product | Power Semiconductor Modules | - | - |
Type | GenX4 | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247AD-3 | TO-247AD-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Packaging | Tube | Tube | Tube |
Configuration | Single | Single | Single |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | - | - |
Fall Time | 53 ns | - | - |
Id Continuous Drain Current | 94 A | - | - |
Pd Power Dissipation | 500 W | 500 W | 416 W |
Product Type | Discrete Semiconductor Modules | IGBT Transistors | IGBT Transistors |
Rise Time | 58 ns | - | - |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | Discrete Semiconductor Modules | IGBTs | IGBTs |
Tradename | XPT | XPT | XPT |
Typical Turn Off Delay Time | 205 ns | - | - |
Typical Turn On Delay Time | 18 ns | - | - |
Vds Drain Source Breakdown Voltage | 1200 V | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Technology | - | Si | Si |
Collector Emitter Voltage VCEO Max | - | 1200 V | 1200 V |
Collector Emitter Saturation Voltage | - | 3.7 V | 3.7 V |
Maximum Gate Emitter Voltage | - | 30 V | 30 V |
Continuous Collector Current at 25 C | - | 75 A | 66 A |
Series | - | IXYH30N120 | IXYH30N120 |
Continuous Collector Current Ic Max | - | 75 A | 66 A |
Gate Emitter Leakage Current | - | 100 nA | 100 nA |
Unit Weight | - | 1.340411 oz | 1.340411 oz |