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IXFR36N60P

IXFR36N60P
Mfr. #:
IXFR36N60P
निर्माता:
Littelfuse
विवरण:
MOSFET 600V 20A
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IXFR36N60P डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFR36N60P DatasheetIXFR36N60P Datasheet (P4)
ECAD Model:
थप जानकारी:
IXFR36N60P थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
IXYS
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-247-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
20 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
200 mOhms
Vgs - गेट-स्रोत भोल्टेज:
30 V
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
208 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
HiPerFET
प्याकेजिङ:
ट्यूब
उचाइ:
21.34 mm
लम्बाइ:
16.13 mm
शृङ्खला:
IXFR36N60
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
5.21 mm
ब्रान्ड:
IXYS
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
40 S
पतन समय:
22 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
25 ns
कारखाना प्याक मात्रा:
30
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
80 ns
सामान्य टर्न-अन ढिलाइ समय:
30 ns
एकाइ वजन:
0.186952 oz
Tags
IXFR3, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 208 W 102 nC Silicon Through Hole Mosfet - ISOPLUS-247
***ical
Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) ISOPLUS 247
***ark
Mosfet, N, Isoplus247; Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; On Resistance Rds(On):0.2Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
भाग # Mfg। विवरण स्टक मूल्य
IXFR36N60P
DISTI # V99:2348_15878423		IXYS CorporationTrans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		60
  • 1000:$6.4719
  • 500:$6.6650
  • 250:$7.2600
  • 100:$7.8930
  • 50:$8.1240
  • 25:$8.7060
  • 10:$10.1510
  • 1:$11.1080
IXFR36N60P
DISTI # IXFR36N60P-ND		IXYS CorporationMOSFET N-CH 600V 20A ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$10.4633
IXFR36N60P
DISTI # 29727953		IXYS CorporationTrans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		60
  • 50:$8.1240
  • 25:$8.7060
  • 10:$10.1510
  • 2:$11.1080
IXFR36N60P
DISTI # 24M3022		IXYS CorporationMOSFET, N, ISOPLUS247,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:208W RoHS Compliant: Yes232
  • 1:$13.3300
  • 10:$12.0100
  • 25:$9.9900
  • 50:$9.2800
  • 100:$9.0700
  • 250:$8.2800
  • 500:$7.5500
IXFR36N60P
DISTI # 747-IXFR36N60P		IXYS CorporationMOSFET 600V 20A
RoHS: Compliant		118
  • 1:$13.3300
  • 10:$12.0100
  • 25:$9.9900
  • 50:$9.2800
  • 100:$9.0700
  • 250:$8.2800
  • 500:$7.5500
  • 1000:$7.2000
IXFR36N60P
DISTI # C1S331700021744		IXYS CorporationTrans MOSFET N-CH 600V 20A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		60
  • 50:$8.1240
  • 25:$8.7060
  • 10:$10.1510
  • 1:$11.1080
IXFR36N60P
DISTI # 1300099		IXYS CorporationMOSFET, N, ISOPLUS247
RoHS: Compliant		232
  • 1:£11.8900
  • 5:£11.3400
  • 10:£8.5100
  • 50:£7.9000
  • 100:£7.7200
IXFR36N60P
DISTI # 1300099		IXYS CorporationMOSFET, N, ISOPLUS247
RoHS: Compliant		232
  • 1:$21.1000
  • 10:$19.0100
  • 25:$15.8100
  • 50:$14.6800
  • 100:$14.3600
  • 250:$13.1100
  • 500:$11.9500
  • 1000:$11.4000
छवि भाग # विवरण
SAF-XC866-4FRI BE

Mfr.#: SAF-XC866-4FRI BE

OMO.#: OMO-SAF-XC866-4FRI-BE

 8-bit Microcontrollers - MCU 16KB FLASH. 768KB RAM UART SPI
MUBW20-06A6K

Mfr.#: MUBW20-06A6K

OMO.#: OMO-MUBW20-06A6K

 Discrete Semiconductor Modules 20 Amps 600V
SAF-XC866-4FRI BE

Mfr.#: SAF-XC866-4FRI BE

OMO.#: OMO-SAF-XC866-4FRI-BE-182

 Microcontrollers - MCU 8-bit Microcontrollers - MCU 16KB FLASH. 768KB RAM UART SPI
MUBW20-06A6K

Mfr.#: MUBW20-06A6K

OMO.#: OMO-MUBW20-06A6K-IXYS-CORPORATION

 Discrete Semiconductor Modules 20 Amps 600V
उपलब्धता
स्टक:
117
अर्डर मा:
2100
मात्रा प्रविष्ट गर्नुहोस्:
IXFR36N60P को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १३.३३
US$ १३.३३
10
US$ १२.०१
US$ १२०.१०
25
US$ ९.९९
US$ २४९.७५
50
US$ ९.२८
US$ ४६४.००
100
US$ ९.०७
US$ ९०७.००
250
US$ ८.२८
US$ २ ०७०.००
500
US$ ७.५५
US$ ३ ७७५.००
1000
US$ ७.२०
US$ ७ २००.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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