OMO ElectronicOMO Electronic
Expand menu
नमस्कार, साइन इन गर्नुहोस्मेरो खाता
0 कार्ट

SGH30N60RUFDTU

SGH30N60RUFDTU
Mfr. #:
SGH30N60RUFDTU
निर्माता:
ON Semiconductor / Fairchild
विवरण:
IGBT Transistors Dis Short Circuit Rated IGBT
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SGH30N60RUFDTU डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेज / केस:
TO-3P-3
माउन्टिङ शैली:
प्वाल मार्फत
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
600 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
2.2 V
अधिकतम गेट एमिटर भोल्टेज:
20 V
25 C मा निरन्तर कलेक्टर वर्तमान:
48 A
Pd - शक्ति अपव्यय:
235 W
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
शृङ्खला:
SGH30N60RUFD
प्याकेजिङ:
ट्यूब
निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:
48 A
उचाइ:
18.9 mm
लम्बाइ:
15.8 mm
चौडाइ:
5 mm
ब्रान्ड:
सेमीकन्डक्टर / फेयरचाइल्डमा
निरन्तर कलेक्टर वर्तमान:
48 A
गेट-एमिटर चुहावट वर्तमान:
+/- 100 nA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
450
उपश्रेणी:
IGBTs
भाग # उपनाम:
SGH30N60RUFDTU_NL
एकाइ वजन:
0.225789 oz
Tags
SGH30N60RUFD, SGH30N60R, SGH30N6, SGH30, SGH3, SGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,Igbt,N-Chan+Diode,600V V(Br)Ces,48A I(C),To-247Var Rohs Compliant: Yes
***et
Trans IGBT Chip N-CH 600V 48A 3-Pin(3+Tab) TO-3P(N) Rail
***rchild Semiconductor
Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
***p One Stop Global
Trans IGBT Chip N-CH 600V 48A 250000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600 V, 24 A IGBT with anti-parallel diode in TO-220AB package, TO220COPAK-3, RoHS
***(Formerly Allied Electronics)
600V ULTRAFAST COPACK TRENCH IGBT IN A TO-220AB PACKAGE | Infineon IRGB4062DPBF
***ineon
Target Applications: Air Conditioner; Fan; PFC; Pump; Solar; UPS; Washing Machine; Welding
***ure Electronics
IRGB4062DPbF Series 600 V 24 A N-Channel Bipolar Transistor IGBT - TO-220AB
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.04 V Current release time: 29 ns Power dissipation: 250 W
***ark
Dc Collector Current:48A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:250W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Msl:- Rohs Compliant: Yes |Infineon IRGB4062DPBF.
***ment14 APAC
IGBT, COPAK, TO-220; Transistor Type:IGBT; DC Collector Current:48A; Collector Emitter Voltage Vces:1.65V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:48A; Package / Case:TO-220; Power Dissipation Max:250W; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Pulsed Current Icm:96A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 48A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.04 V Current release time: 29 ns Power dissipation: 250 W
***nell
IGBT, COPAK, TO-247; DC Collector Current: 48A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 48A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Power Dissipation Max: 250W; Pulsed Current Icm: 96A; Rise Time: 22ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
***ineon
Target Applications: Air Conditioner; Fan; PFC; Pump; Solar; UPS; Washing Machine; Welding
***-Wing Technology
Tube Through Hole Trench ROHS3Compliant IGBT Transistor 1.95V @ 15V 24A 48A 250W 89ns
***nell
IGBT,N CH,DIODE,600V,48A,D2PAK; Transistor Type:IGBT; DC Collector Current:48A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:250W
***ical
Trans IGBT Chip N-CH 600V 60A 150000mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
600 V, 30 A high speed trench gate field-stop IGBT
***nell
IGBT, 600V, 60A, TO-220-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
***ical
Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***icroelectronics
600 V, 20 A high speed trench gate field-stop IGBT
***ical
Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
***r Electronics
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
भाग # Mfg। विवरण स्टक मूल्य
SGH30N60RUFDTU
DISTI # SGH30N60RUFDTU-ND		ON SemiconductorIGBT 600V 48A 235W TO3P
RoHS: Compliant
Min Qty: 450
Container: Tube		Limited Supply - Call
  • 450:$3.1408
SGH30N60RUFDTU
DISTI # SGH30N60RUFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 48A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: SGH30N60RUFDTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€2.0900
  • 10:€1.8900
  • 25:€1.8900
  • 50:€1.7900
  • 100:€1.7900
  • 500:€1.6900
  • 1000:€1.6900
SGH30N60RUFDTU
DISTI # SGH30N60RUFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 48A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: SGH30N60RUFDTU)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.8900
  • 900:$1.8900
  • 1800:$1.7900
  • 2700:$1.7900
  • 4500:$1.7900
SGH30N60RUFDTU
DISTI # 512-SGH30N60RUFDTU		ON SemiconductorIGBT Transistors Dis Short Circuit Rated IGBT
RoHS: Compliant		0
    छवि भाग # विवरण
    SGH30N60

    Mfr.#: SGH30N60

    OMO.#: OMO-SGH30N60-1190

    		 नयाँ र मौलिक
    SGH30N60DUFDTU

    Mfr.#: SGH30N60DUFDTU

    OMO.#: OMO-SGH30N60DUFDTU-1190

    		 नयाँ र मौलिक
    SGH30N60RUF

    Mfr.#: SGH30N60RUF

    OMO.#: OMO-SGH30N60RUF-1190

    		 नयाँ र मौलिक
    SGH30N60RUF G30N60

    Mfr.#: SGH30N60RUF G30N60

    OMO.#: OMO-SGH30N60RUF-G30N60-1190

    		 नयाँ र मौलिक
    SGH30N60RUFD G30N60RUF

    Mfr.#: SGH30N60RUFD G30N60RUF

    OMO.#: OMO-SGH30N60RUFD-G30N60RUF-1190

    		 नयाँ र मौलिक
    SGH30N60RUFD G30N60RUFD

    Mfr.#: SGH30N60RUFD G30N60RUFD

    OMO.#: OMO-SGH30N60RUFD-G30N60RUFD-1190

    		 नयाँ र मौलिक
    SGH30N60RUFDTU(SG)

    Mfr.#: SGH30N60RUFDTU(SG)

    OMO.#: OMO-SGH30N60RUFDTU-SG--1190

    		 नयाँ र मौलिक
    SGH30N60RUFTU

    Mfr.#: SGH30N60RUFTU

    OMO.#: OMO-SGH30N60RUFTU-ON-SEMICONDUCTOR

    		 IGBT 600V 48A 235W TO3P
    SGH30N60TU

    Mfr.#: SGH30N60TU

    OMO.#: OMO-SGH30N60TU-1190

    		 नयाँ र मौलिक
    SGH30N60RUFDTU

    Mfr.#: SGH30N60RUFDTU

    OMO.#: OMO-SGH30N60RUFDTU-ON-SEMICONDUCTOR

    		 IGBT Transistors Dis Short Circuit Rated IGBT
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    5000
    मात्रा प्रविष्ट गर्नुहोस्:
    SGH30N60RUFDTU को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ३.८६
    US$ ३.८६
    10
    US$ ३.२७
    US$ ३२.७०
    100
    US$ २.८४
    US$ २८४.००
    250
    US$ २.६९
    US$ ६७२.५०
    500
    US$ २.४२
    US$ १ २१०.००
    1000
    US$ २.०४
    US$ २ ०४०.००
    2500
    US$ १.९४
    US$ ४ ८५०.००
    5000
    US$ १.८६
    US$ ९ ३००.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
    बाट सुरु गर्नुहोस्
    नवीनतम उत्पादनहरू
    • Gate Drivers
      Gate Drivers
      The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
    • NCP137 700 mA LDO Regulators
      NCP137 700 mA LDO Regulators
      ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
    • NCP114 Low Dropout Regulators
      NCP114 Low Dropout Regulators
      ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
    • LC717A00AR Touch Sensor
      LC717A00AR Touch Sensor
      These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
    • Compare SGH30N60RUFDTU
      Compare SGH30N60RUFDTU
      SGH30N60RUFD vs SGH30N60RUFDG30N60RUF vs SGH30N60RUFDG30N60RUFD
    • FDMQ86530L Quad-MOSFET
      FDMQ86530L Quad-MOSFET
      ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
    More Newest Products
    Top