IXFH15N100

Mfr. #:: IXFH15N100
निर्माता:: IXYS
विवरण:: MOSFET 15 Amps 1000V 0.7 Rds
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IXFH15N100 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
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उत्पादन विशेषता
विशेषता मान

निर्माता: IXYS

उत्पादन कोटि: FETs - एकल

शृङ्खला: IXFH15N100

प्याकेजिङ: ट्यूब

एकाइ - वजन: 0.229281 oz

माउन्टिङ-शैली: प्वाल मार्फत

ट्रेडनेम: HyperFET

प्याकेज-केस: TO-247-3

प्रविधि: सि

च्यानलहरूको संख्या: 1 Channel

कन्फिगरेसन: एकल

ट्रान्जिस्टर-प्रकार: 1 N-Channel

Pd-शक्ति-डिसिपेशन: 360 W

अधिकतम-सञ्चालन-तापमान: + 150 C

न्यूनतम-सञ्चालन-तापमान: - 55 C

पतन-समय: 30 ns

उदय-समय: 30 ns

Vgs-गेट-स्रोत-भोल्टेज: 20 V

आईडी-निरन्तर-नाली-वर्तमान: 15 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: 1000 V

Rds-अन-ड्रेन-स्रोत-प्रतिरोध: 700 mOhms

ट्रान्जिस्टर-ध्रुवता: N- च्यानल

सामान्य-टर्न-अफ-ढिलाइ-समय: 120 ns

सामान्य-टर्न-अन-डिले-समय: 27 ns

च्यानल-मोड: वृद्धि

Tags: IXFH15N1, IXFH15N, IXFH15, IXFH1, IXFH, IXF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXFH15N100 विवरण

***ment14 APAC: MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Source Voltage Vds:1kV; On Resistance Rds(on):0.7ohm;

***i-Key: MOSFET N-CH 1000V 15A TO-247

***el Electronic: IC UART FIFO 16B DUAL 48TQFP

***el Nordic: Contact for details

***icroelectronics: N-CHANNEL 1000V 0.56 Ohm 13.5A TO-247 ZENER-PROTECTED SUPERMESH™ POWER MOSFET

***ure Electronics: N-Channel 1 kV 0.7 O 350 W Zener Protected SuperMESH Power MosFet - TO-247

***ark: N Channel Mosfet, 1Kv, 13A, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:13A; On Resistance Rds(On):0.7Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 13A I(D), 1000V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***icroelectronics: N-CHANNEL 900V - 0.40͐2;6; - 15A - TO-247 Zener-Protected SuperMESH™ MOSFET

***ure Electronics: N Channel 900 V 0.4 O Flange Mount SuperMESH Power Mosfet - TO-247

***nell: MOSFET, N CH, 900V, 15A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.5A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Po

***r Electronics: Power Field-Effect Transistor, 15A I(D), 900V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***icroelectronics: N-channel 900 V, 0.72 Ohm, 11 A, TO-247 Zener-protected SuperMESH(TM) Power MOSFET

***ure Electronics: N-Channel 900 V 0.88 Ohm Flange Mount SuperMESH Power MosFet - TO-247-3

***ource: TRANSISTOR | MOSFET | N-CHANNEL | 600V VBRDSS | 12A ID | TO-247

***ark: MOSFET, N-CH, 900V, 11A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 11A I(D), 900V, 0.88ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***ure Electronics: Single N-Channel 800 V 450 Ohm 64 nC CoolMOS Power Mosfet - TO-247-3

***ment14 APAC: MOSFET, N, COOLMOS, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-93; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-218; Current Id Max:11A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:SOT-93; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Power Dissipation Ptot Max:125W; Pulse Current Idm:24A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 800 / ON Resistance (Rds(on)) mOhm = 450 / Gate-Source Voltage V = 20 / Fall Time ns = 10 / Rise Time ns = 15 / Turn-OFF Delay Time ns = 72 / Turn-ON Delay Time ns = 25 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 156

***ineon: 800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar

***ical: Trans MOSFET N-CH 900V 11A Automotive 3-Pin(3+Tab) TO-247 Tube

*** Stop Electro: Power Field-Effect Transistor, 11A I(D), 900V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

***ment14 APAC: MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:900V; On Resistance Rds(on):500mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:156W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Package / Case:TO-247; Power Dissipation Pd:156W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ineon: 900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IXFH15N100Q3 DISTI # 33102012	IXYS Corporation	Trans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247 RoHS: Compliant	60	2:$7.0800
IXFH15N100Q3 DISTI # IXFH15N100Q3-ND	IXYS Corporation	MOSFET N-CH 1000V 15A TO-247 RoHS: Compliant Min Qty: 1 Container: Tube	246In Stock	1020:$7.5040 510:$7.7720 120:$9.1120 30:$9.9160 1:$11.7900
IXFH15N100 DISTI # IXFH15N100-ND	IXYS Corporation	MOSFET N-CH 1000V 15A TO-247 RoHS: Compliant Min Qty: 30 Container: Tube	Limited Supply - Call
IXFH15N100Q DISTI # IXFH15N100Q-ND	IXYS Corporation	MOSFET N-CH 1000V 15A TO-247 RoHS: Compliant Min Qty: 30 Container: Tube	Limited Supply - Call
IXFH15N100P DISTI # IXFH15N100P-ND	IXYS Corporation	MOSFET N-CH 1000V 15A TO-247 RoHS: Compliant Min Qty: 30 Container: Tube	Temporarily Out of Stock	30:$6.8267
IXFH15N100P DISTI # V36:1790_15877350	IXYS Corporation	Trans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247 RoHS: Compliant	0
IXFH15N100Q3 DISTI # V36:1790_15877354	IXYS Corporation	Trans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247 RoHS: Compliant	0
IXFH15N100 DISTI # 97K2539	IXYS Corporation	MOSFET, N, 15A, 1 KV,TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:15A,Drain Source Voltage Vds:1kV,On Resistance Rds(on):0.7ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V,No. of Pins:3Pins RoHS Compliant: Yes	0
IXFH15N100P DISTI # 03AH0529	Littelfuse Inc	DISCMOSFETN-CH HIPERFET-POLAR TO-247AD / TUBE	0	500:$4.1700 250:$4.5000 100:$4.7300 50:$5.3300 25:$5.7600 10:$6.6600 1:$7.0000
IXFH15N100Q3 DISTI # 03AH0530	Littelfuse Inc	DISCMSFT NCHHIPERFET-Q3 CLASS TO-247AD / TUBE	0	500:$6.7000 250:$7.2400 100:$7.5100 50:$8.0400 25:$9.1700 10:$9.8700 1:$10.4000
IXFH15N100 DISTI # 747-IXFH15N100	IXYS Corporation	MOSFET 15 Amps 1000V 0.7 Rds RoHS: Compliant	0
IXFH15N100Q3 DISTI # 747-IXFH15N100Q3	IXYS Corporation	MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A RoHS: Compliant	690	1:$13.5600 10:$12.3300 25:$11.4000 50:$10.4900 100:$10.2300 250:$9.3800 500:$8.5100 1000:$7.7700
IXFH15N100P DISTI # 747-IXFH15N100P	IXYS Corporation	MOSFET 15 Amps 1000V 0.76 Rds RoHS: Compliant	46	1:$9.5700 10:$8.6200 25:$7.1700 50:$6.6600 100:$6.5100 250:$5.9500 500:$5.4200 1000:$5.1700
IXFH15N100Q DISTI # 747-IXFH15N100Q	IXYS Corporation	MOSFET 15 Amps 1000V 0.725 Rds RoHS: Compliant	0
IXFH15N100Q3 DISTI # 8011389P	IXYS Corporation	MOSFET N-CH 1000V 15A Q3 HIPERFET TO247, TU	1242	15:£8.5200 6:£8.9000
IXFH15N100Q3 DISTI # 8011389	IXYS Corporation	MOSFET N-CH 1000V 15A Q3 HIPERFET TO247, EA	16	15:£8.5200 6:£8.9000 1:£9.2800
IXFH15N100Q3 DISTI # IXFH15N100Q3	IXYS Corporation	Transistor: N-MOSFET,Q3-Class,unipolar,1kV,15A,690W,TO247-3	54	1:$10.9700 3:$9.8700 10:$8.7200 30:$7.8300
IXFH15N100Q			41
IXFH15N100 DISTI # 9359583	IXYS Corporation	MOSFET, N, TO-247 RoHS: Compliant	0	25:$18.5900 10:$19.6400 1:$20.0200

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: IXFH110N10P OMO.#: OMO-IXFH110N10P	MOSFET 110 Amps 100V 0.015 Rds
	Mfr.#: IXFH14N60P OMO.#: OMO-IXFH14N60P	MOSFET 600V 14A
	Mfr.#: IXFH110N25T OMO.#: OMO-IXFH110N25T	MOSFET 110 Amps 0V
	Mfr.#: IXFH14N80P OMO.#: OMO-IXFH14N80P	MOSFET DIODE Id14 BVdass800
	Mfr.#: IXFH18N60X OMO.#: OMO-IXFH18N60X	MOSFET DISCMSFT NCH ULTRJNCTN XCLASS
	Mfr.#: IXFH12N80P OMO.#: OMO-IXFH12N80P	MOSFET DIODE Id12 BVdass800
	Mfr.#: IXFH12N65X2 OMO.#: OMO-IXFH12N65X2	MOSFET 650V/12A TO-247
	Mfr.#: IXFH14N85X OMO.#: OMO-IXFH14N85X-IXYS-CORPORATION	MOSFET N-CH 850V 14A TO247AD
	Mfr.#: IXFH15N100P OMO.#: OMO-IXFH15N100P-IXYS-CORPORATION	Darlington Transistors MOSFET 15 Amps 1000V 0.76 Rds
	Mfr.#: IXFH120N15P OMO.#: OMO-IXFH120N15P-IXYS-CORPORATION	Darlington Transistors MOSFET 120 Amps 150V 0.016 Rds

उपलब्धता

स्टक:: Available
अर्डर मा:: 5500
मात्रा प्रविष्ट गर्नुहोस्:

IXFH15N100 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १५.०४~~; ~~US$ १५.०४~~

10: ~~US$ १४.२९~~; ~~US$ १४२.९३~~

100: ~~US$ १३.५४~~; ~~US$ १ ३५४.०५~~

500: ~~US$ १२.७९~~; ~~US$ ६ ३९४.१५~~

1000: ~~US$ १२.०४~~; ~~US$ १२ ०३६.००~~

बाट सुरु गर्नुहोस्

IXFH15N1 5
IXFH15N 9
IXFH15 17
IXFH1 93
IXFH 291
IXF 1494

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IXFH15N100

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes