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IXFT18N100Q3

IXFT18N100Q3
Mfr. #:
IXFT18N100Q3
निर्माता:
Littelfuse
विवरण:
MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IXFT18N100Q3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFT18N100Q3 DatasheetIXFT18N100Q3 Datasheet (P4-P5)
ECAD Model:
थप जानकारी:
IXFT18N100Q3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
IXYS
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-268-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
1 kV
आईडी - निरन्तर ड्रेन वर्तमान:
18 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
660 mOhms
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
90 nC
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
830 W
कन्फिगरेसन:
एकल
व्यापार नाम:
HiPerFET
प्याकेजिङ:
ट्यूब
शृङ्खला:
IXFT18N100
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
IXYS
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
16 S
पतन समय:
13 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
32 ns
कारखाना प्याक मात्रा:
30
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
40 ns
सामान्य टर्न-अन ढिलाइ समय:
37 nS
एकाइ वजन:
0.229281 oz
Tags
IXFT18, IXFT1, IXFT, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ment14 APAC
MOSFET, N-CH, 1KV, 18A, TO-268
***i-Key
MOSFET N-CH 1000V 18A TO268
***ark
Mosfet, N-Ch, 1Kv, 18A, To-268; Transistor Polarity:n Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:1Kv; On Resistance Rds(On):0.66Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:6.5V; Power Dissipation Rohs Compliant: Yes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
भाग # Mfg। विवरण स्टक मूल्य
IXFT18N100Q3
DISTI # IXFT18N100Q3-ND		IXYS CorporationMOSFET N-CH 1000V 18A TO-268
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$14.5707
IXFT18N100Q3
DISTI # 747-IXFT18N100Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
RoHS: Compliant		0
  • 1:$18.1100
  • 10:$16.4700
  • 25:$15.2300
  • 50:$14.0100
  • 100:$13.6700
  • 250:$12.5300
  • 500:$11.3700
IXFT18N100Q3
DISTI # 8011461P		IXYS CorporationMOSFET N-CH 1000V 18A Q3 HIPERFET TO268, TU24
  • 5:£10.4800
  • 10:£10.0100
  • 25:£9.6600
IXFT18N100Q3
DISTI # 2674768		IXYS CorporationMOSFET, N-CH, 1KV, 18A, TO-268
RoHS: Compliant		0
  • 1:£14.2800
  • 5:£14.1500
  • 10:£11.4000
  • 50:£10.9500
  • 100:£10.6800
छवि भाग # विवरण
IXFT18N100Q3

Mfr.#: IXFT18N100Q3

OMO.#: OMO-IXFT18N100Q3

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IXFT180N20X3HV

Mfr.#: IXFT180N20X3HV

OMO.#: OMO-IXFT180N20X3HV

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IXFT18N90P

Mfr.#: IXFT18N90P

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IXFT180N20X3HV

Mfr.#: IXFT180N20X3HV

OMO.#: OMO-IXFT180N20X3HV-IXYS-CORPORATION

 200V/180A ULTRA JUNCTION X3-CLAS
IXFT1874 TR

Mfr.#: IXFT1874 TR

OMO.#: OMO-IXFT1874-TR-IXYS-CORPORATION

 MOSFET N-CH TO268
IXFT18N100Q3

Mfr.#: IXFT18N100Q3

OMO.#: OMO-IXFT18N100Q3-IXYS-CORPORATION

 Darlington Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
IXFT18N90P

Mfr.#: IXFT18N90P

OMO.#: OMO-IXFT18N90P-IXYS-CORPORATION

 Darlington Transistors MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
उपलब्धता
स्टक:
Available
अर्डर मा:
1000
मात्रा प्रविष्ट गर्नुहोस्:
IXFT18N100Q3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १८.११
US$ १८.११
10
US$ १६.४७
US$ १६४.७०
25
US$ १५.२३
US$ ३८०.७५
50
US$ १४.०१
US$ ७००.५०
100
US$ १३.६७
US$ १ ३६७.००
250
US$ १२.५३
US$ ३ १३२.५०
500
US$ ११.३७
US$ ५ ६८५.००
1000
US$ १०.३८
US$ १० ३८०.००
बाट सुरु गर्नुहोस्
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