IPB025N08N3 G

IPB025N08N3 G
Mfr. #:
IPB025N08N3 G
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB025N08N3 G डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPB025N08N3 G थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
80 V
आईडी - निरन्तर ड्रेन वर्तमान:
120 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
2.5 mOhms
Vgs - गेट-स्रोत भोल्टेज:
20 V
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
300 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
शृङ्खला:
OptiMOS 3
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
33 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
73 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
86 ns
सामान्य टर्न-अन ढिलाइ समय:
28 ns
भाग # उपनाम:
IPB025N08N3GATMA1 IPB25N8N3GXT SP000311980
एकाइ वजन:
0.139332 oz
Tags
IPB025N08N3G, IPB025N0, IPB025, IPB02, IPB0, IPB
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IPB025N08N3GATMA1
DISTI # V72:2272_06377516
Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
491
  • 250:$3.3140
  • 100:$3.6820
  • 25:$4.3940
  • 10:$4.6929
  • 1:$5.4740
IPB025N08N3GATMA1
DISTI # V36:1790_06377516
Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
    IPB025N08N3GATMA1
    DISTI # IPB025N08N3GATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 80V 120A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    7603In Stock
    • 500:$3.5581
    • 100:$4.3940
    • 10:$5.3590
    • 1:$6.0000
    IPB025N08N3GATMA1
    DISTI # IPB025N08N3GATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 80V 120A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    7603In Stock
    • 500:$3.5581
    • 100:$4.3940
    • 10:$5.3590
    • 1:$6.0000
    IPB025N08N3GATMA1
    DISTI # IPB025N08N3GATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 80V 120A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    5000In Stock
    • 2000:$2.7677
    • 1000:$2.9134
    IPB025N08N3 G
    DISTI # 32731516
    Infineon Technologies AG01000
    • 200:$4.2840
    • 100:$4.6792
    • 50:$5.7120
    • 10:$5.7758
    • 4:$6.4260
    IPB025N08N3GATMA1
    DISTI # 31005994
    Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    1000
    • 1000:$2.3063
    IPB025N08N3GATMA1
    DISTI # 32864934
    Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    1000
    • 1000:$2.1709
    • 500:$2.2288
    • 250:$2.2899
    • 100:$2.3544
    • 50:$2.4226
    • 25:$2.4949
    • 5:$2.5717
    IPB025N08N3GATMA1
    DISTI # 30331029
    Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    491
    • 250:$3.5625
    • 100:$3.9581
    • 25:$4.7236
    • 10:$5.0449
    • 3:$5.8845
    IPB025N08N3GATMA1
    DISTI # SP000311980
    Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R (Alt: SP000311980)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel
    Europe - 2000
    • 1000:€2.4900
    • 2000:€2.3900
    • 4000:€2.2900
    • 6000:€2.1900
    • 10000:€1.9900
    IPB025N08N3 G
    DISTI # IPB025N08N3 G
    Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G)
    RoHS: Compliant
    Min Qty: 148
    Container: Bulk
    Americas - 0
    • 149:$2.3900
    • 151:$2.2900
    • 300:$2.1900
    • 745:$2.0900
    • 1490:$2.0900
    IPB025N08N3GXT
    DISTI # IPB025N08N3GATMA1
    Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB025N08N3GATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 1000:$2.6900
    • 2000:$2.5900
    • 4000:$2.4900
    • 6000:$2.3900
    • 10000:$2.3900
    IPB025N08N3GATMA1
    DISTI # 60R2648
    Infineon Technologies AGMOSFET, N CHANNEL, 80V, 120A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.002ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
    • 500:$3.1400
    • 250:$3.5000
    • 100:$3.6900
    • 50:$3.8800
    • 25:$4.0600
    • 10:$4.2500
    • 1:$5.0000
    IPB025N08N3 G
    DISTI # 726-IPB025N08N3G
    Infineon Technologies AGMOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    1428
    • 1:$5.0000
    • 10:$4.2500
    • 100:$3.6900
    • 250:$3.5000
    • 500:$3.1400
    • 1000:$2.6400
    • 2000:$2.5100
    IPB025N08N3 GInfineon Technologies AGPower Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Not Compliant
    2700
    • 1000:$2.2400
    • 500:$2.3600
    • 100:$2.4500
    • 25:$2.5600
    • 1:$2.7500
    IPB025N08N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant
    20
    • 1000:$2.2400
    • 500:$2.3600
    • 100:$2.4500
    • 25:$2.5600
    • 1:$2.7500
    IPB025N08N3GATMA1
    DISTI # 8986898P
    Infineon Technologies AGMOSFET N-CHANNEL 80V 120A TO263-3, RL258
    • 10:£1.9800
    IPB025N08N3GATMA1
    DISTI # 1775525
    Infineon Technologies AGMOSFET, N CH, 120A, 80V, PG-TO263-3
    RoHS: Compliant
    1424
    • 500:£2.4400
    • 250:£2.7200
    • 100:£2.8700
    • 10:£3.3000
    • 1:£4.3400
    IPB025N08N3GATMA1
    DISTI # 1775525
    Infineon Technologies AGMOSFET, N CH, 120A, 80V, PG-TO263-3
    RoHS: Compliant
    324
    • 2000:$3.7800
    • 1000:$3.9800
    • 500:$4.7300
    • 250:$5.2700
    • 100:$5.5600
    • 10:$6.4000
    • 1:$7.5400
    IPB025N08N3GATMA1
    DISTI # XSKDRABS0032304
    Infineon Technologies AG 
    RoHS: Compliant
    3000 in Stock0 on Order
    • 3000:$3.4440
    • 1000:$3.6960
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    उपलब्धता
    स्टक:
    600
    अर्डर मा:
    2583
    मात्रा प्रविष्ट गर्नुहोस्:
    IPB025N08N3 G को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ५.००
    US$ ५.००
    10
    US$ ४.२५
    US$ ४२.५०
    100
    US$ ३.६९
    US$ ३६९.००
    250
    US$ ३.५०
    US$ ८७५.००
    500
    US$ ३.१४
    US$ १ ५७०.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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