 |  | | |
| PartNumber | IPB020N08N5ATMA1 | IPB020N04N G | IPB020N04NGATMA1 |
| Description | MOSFET N-Ch 80V 120A D2PAK-2 | MOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3 | MOSFET MV POWER MOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-7 | TO-263-7 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 40 V | - |
| Id Continuous Drain Current | 120 A | 140 A | - |
| Rds On Drain Source Resistance | 2.5 mOhms | 2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 133 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 300 W | 167 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS 5 | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 100 S | - | - |
| Fall Time | 20 ns | 7.8 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 16 ns | 6.4 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 62 ns | 40 ns | - |
| Typical Turn On Delay Time | 28 ns | 27 ns | - |
| Part # Aliases | IPB020N08N5 SP001227042 | IPB020N04NGATMA1 IPB2N4NGXT SP000359157 | G IPB020N04N IPB2N4NGXT SP000359157 |
| Unit Weight | 0.139332 oz | 0.056438 oz | - |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB020N10N5LFATMA1 | MOSFET DIFFERENTIATED MOSFETS | |
| IPB024N10N5ATMA1 | MOSFET DIFFERENTIATED MOSFETS | ||
| IPB020N08N5ATMA1 | MOSFET N-Ch 80V 120A D2PAK-2 | ||
| IPB020N10N5 | MOSFET N-Ch 100V 120A D2PAK-2 | ||
| IPB020N10N5ATMA1 | MOSFET N-Ch 100V 120A D2PAK-2 | ||
| IPB024N08N5ATMA1 | MOSFET N-Ch 80V 120A D2PAK-2 | ||
| IPB020NE7N3 G | MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3 | ||
| IPB020N04N G | MOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3 | ||
| IPB020N10N5LFATMA1 | MOSFET N-CH 100V D2PAK-3 | ||
| IPB024N10N5ATMA1 | MOSFET N-CH 100V 180A TO263-7 | ||
| IPB020N04NGATMA1 | MOSFET N-CH 40V 140A TO263-7 | ||
| IPB020NE7N3GATMA1 | MOSFET N-CH 75V 120A TO263-3 | ||
| IPB021N06N3GATMA1 | MOSFET N-CH 60V 120A TO263-3 | ||
| IPB022N04LGATMA1 | MOSFET N-CH 40V 90A TO263-3 | ||
| IPB023N04NGATMA1 | MOSFET N-CH 40V 90A TO263-3 | ||
| IPB023N06N3GATMA1 | MOSFET N-CH 60V 140A TO263-7 | ||
| IPB020N10N5ATMA1 | IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2 | ||
| IPB024N08N5ATMA1 | MOSFET N-CH 80V TO263-3 | ||
| IPB020N08N5ATMA1 | RF Bipolar Transistors MOSFET N-Ch 80V 120A D2PAK-2 | ||
Infineon Technologies |
IPB020N04NGATMA1 | MOSFET MV POWER MOS | |
| IPB020N08N5ATMA1-CUT TAPE | नयाँ र मौलिक | ||
| IPB020N04N | नयाँ र मौलिक | ||
| IPB020N04N3G | नयाँ र मौलिक | ||
| IPB020N04NG | नयाँ र मौलिक | ||
| IPB020N08N5 | N-CH 80V 120A 2mOhm TO263-3 | ||
| IPB020N10N5 | Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) TO-263 | ||
| IPB020N10N5LF | SP001503854 , DIFFERENTIATED MOSFETS (Alt: IPB020N10N5LF) | ||
| IPB020NE7N3 | नयाँ र मौलिक | ||
| IPB020NE7N3 G | Trans MOSFET N-CH 75V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB020NE7N3G) | ||
| IPB020NE7N3G | Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB020NE7N3G(020NE7N) | नयाँ र मौलिक | ||
| IPB021N04N | नयाँ र मौलिक | ||
| IPB021N04NG | नयाँ र मौलिक | ||
| IPB021N04NGATMA1 | नयाँ र मौलिक | ||
| IPB021N06N3 | नयाँ र मौलिक | ||
| IPB021N06N3G | Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB022N04L | नयाँ र मौलिक | ||
| IPB022N04LG | Power Field-Effect Transistor, 90A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB022N04LG,022N04 | नयाँ र मौलिक | ||
| IPB023N04N | नयाँ र मौलिक | ||
| IPB023N04NG | Power Field-Effect Transistor, 90A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB023N04NGS | नयाँ र मौलिक | ||
| IPB023N06N3 | नयाँ र मौलिक | ||
| IPB023N06N3G | 140 A, 60 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 | ||
| IPB024N08N5 | N-CH 80V 120A 2,4mOhm TO263-3 | ||
| IPB024N10N5 | नयाँ र मौलिक | ||
| IPB020N04N G | Darlington Transistors MOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3 | ||
| IPB021N06N3 G | IGBT Transistors MOSFET N-Ch 60V 120A D2PAK-2 | ||
| IPB023N06N3 G | IGBT Transistors MOSFET N-Ch 60V 140A D2PAK-6 | ||
| IPB023N04N G | IGBT Transistors MOSFET N-Ch 40V 90A D2PAK-2 |