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IPB020NE7N3 G

IPB020NE7N3 G
Mfr. #:
IPB020NE7N3 G
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB020NE7N3 G डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPB020NE7N3 G थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PG-TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
75 V
आईडी - निरन्तर ड्रेन वर्तमान:
120 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
2 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.3 V
Vgs - गेट-स्रोत भोल्टेज:
10 V
Qg - गेट चार्ज:
155 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
300 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
शृङ्खला:
OptiMOS 3
ट्रान्जिस्टर प्रकार:
1 N-Channel
प्रकार:
OptiMOS 3 Power-Transistor
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
98 S
पतन समय:
22 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
26 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
70 ns
सामान्य टर्न-अन ढिलाइ समय:
19 ns
भाग # उपनाम:
IPB020NE7N3GATMA1 IPB2NE7N3GXT SP000676950
एकाइ वजन:
0.139332 oz
Tags
IPB020NE7N3G, IPB020NE, IPB020, IPB02, IPB0, IPB
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IPB020NE7N3GATMA1
DISTI # V72:2272_06377372		Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$2.7250
  • 500:$3.3590
  • 250:$3.9820
  • 100:$4.0220
  • 25:$4.9509
  • 10:$5.0010
  • 1:$6.1787
IPB020NE7N3GATMA1
DISTI # V36:1790_06377372		Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$2.3000
  • 500000:$2.3020
  • 100000:$2.4680
  • 10000:$2.7450
  • 1000:$2.7900
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 75V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3171In Stock
  • 500:$3.5450
  • 100:$4.1643
  • 10:$5.0830
  • 1:$5.6600
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 75V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3171In Stock
  • 500:$3.5450
  • 100:$4.1643
  • 10:$5.0830
  • 1:$5.6600
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 75V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		2000In Stock
  • 2000:$2.7575
  • 1000:$2.9027
IPB020NE7N3GATMA1
DISTI # 32911882		Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$2.4235
IPB020NE7N3GATMA1
DISTI # 32914046		Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 3:$6.1787
IPB020NE7N3 G
DISTI # IPB020NE7N3G		Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB020NE7N3G)
RoHS: Not Compliant
Min Qty: 139
Container: Bulk		Americas - 0
  • 695:$2.4900
  • 1390:$2.4900
  • 417:$2.5900
  • 278:$2.6900
  • 139:$2.7900
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB020NE7N3GATMA1)
RoHS: Compliant
Min Qty: 142
Container: Bulk		Americas - 0
  • 710:$2.1900
  • 1420:$2.1900
  • 426:$2.2900
  • 284:$2.3900
  • 142:$2.4900
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB020NE7N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$2.4900
  • 10000:$2.4900
  • 4000:$2.5900
  • 2000:$2.6900
  • 1000:$2.7900
IPB020NE7N3GATMA1
DISTI # SP000676950		Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin(2+Tab) TO-263 (Alt: SP000676950)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 10000:€2.0900
  • 6000:€2.2900
  • 4000:€2.3900
  • 2000:€2.4900
  • 1000:€2.5900
IPB020NE7N3GATMA1
DISTI # 85X6012		Infineon Technologies AGMOSFET Transistor, N Channel, 120 A, 75 V, 0.0018 ohm, 10 V, 3.1 V RoHS Compliant: Yes0
    IPB020NE7N3 G
    DISTI # 726-IPB020NE7N3GXT    		Infineon Technologies AGMOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		525
    • 1:$5.2200
    • 10:$4.4400
    • 100:$3.8500
    • 250:$3.6500
    • 500:$3.2700
    • 1000:$2.7600
    • 2000:$2.6200
    IPB020NE7N3GInfineon Technologies AGPower Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		5948
    • 1000:$2.5900
    • 500:$2.7300
    • 100:$2.8400
    • 25:$2.9600
    • 1:$3.1900
    IPB020NE7N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		10245
    • 1000:$2.3300
    • 500:$2.4500
    • 100:$2.5500
    • 25:$2.6600
    • 1:$2.8700
    IPB020NE7N3GATMA1
    DISTI # 8259213P    		Infineon Technologies AGMOSFET N-CH 120A 75V OPTIMOS3 TO263, RL1630
    • 25:£2.0800
    IPB020NE7N3GATMA1
    DISTI # 8259213    		Infineon Technologies AGMOSFET N-CH 120A 75V OPTIMOS3 TO263, PK150
    • 25:£2.0800
    • 5:£2.1340
    IPB020NE7N3GATMA1
    DISTI # IPB020NE7N3GATMA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,75V,120A,300W,PG-TO263-3379
    • 100:$1.9933
    • 10:$2.3875
    • 3:$2.5902
    • 1:$2.7816
    IPB020NE7N3 G
    DISTI # TMOSP10315    		Infineon Technologies AGN-CH75V 120A2mOhm TO263-3
    RoHS: Compliant    		Stock DE - 2005Stock HK - 0Stock US - 0
    • 1000:$2.6000
    IPB020NE7N3GATMA1
    DISTI # 2443378    		Infineon Technologies AGMOSFET, N CH, 75V, 120A, TO-263-3
    RoHS: Compliant    		0
    • 1000:$4.1600
    • 500:$4.9300
    • 250:$5.5000
    • 100:$5.8000
    • 10:$6.6900
    • 1:$7.8700
    IPB020NE7N3GATMA1
    DISTI # 2443378RL    		Infineon Technologies AGMOSFET, N CH, 75V, 120A, TO-263-3
    RoHS: Compliant    		0
    • 1000:$4.1600
    • 500:$4.9300
    • 250:$5.5000
    • 100:$5.8000
    • 10:$6.6900
    • 1:$7.8700
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    मात्रा प्रविष्ट गर्नुहोस्:
    IPB020NE7N3 G को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ५.२२
    US$ ५.२२
    10
    US$ ४.४४
    US$ ४४.४०
    100
    US$ ३.८५
    US$ ३८५.००
    250
    US$ ३.६५
    US$ ९१२.५०
    500
    US$ ३.२७
    US$ १ ६३५.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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