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IRF8313PBF

IRF8313PBF
Mfr. #:
IRF8313PBF
निर्माता:
Infineon / IR
विवरण:
MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRF8313PBF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF8313PBF DatasheetIRF8313PBF Datasheet (P4-P6)IRF8313PBF Datasheet (P7-P9)IRF8313PBF Datasheet (P10)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SO-8
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
9.7 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
21.6 mOhms
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
6 nC
Pd - शक्ति अपव्यय:
2 W
कन्फिगरेसन:
दोहोरो
प्याकेजिङ:
ट्यूब
उचाइ:
1.75 mm
लम्बाइ:
4.9 mm
ट्रान्जिस्टर प्रकार:
2 N-Channel
चौडाइ:
3.9 mm
ब्रान्ड:
Infineon / IR
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
95
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SP001570694
एकाइ वजन:
0.019048 oz
Tags
IRF8313, IRF831, IRF83, IRF8, IRF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 2 W 6 nC Hexfet Power Mosfet Surface Mount - SOIC-8
***ark
Dual N Channel Mosfet, 30V, 9.7A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; On Resistance Rds(On):0.0155Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V
***ment14 APAC
MOSFET, DUAL N-CH 30V 9.7A SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.7A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
भाग # Mfg। विवरण स्टक मूल्य
IRF8313PBF
DISTI # V99:2348_13891188		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
RoHS: Compliant		182
  • 1:$0.2929
IRF8313PBF
DISTI # IRF8313PBF-ND		Infineon Technologies AGMOSFET 2N-CH 30V 9.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    IRF8313PBF..
    DISTI # 30728279    		Infineon Technologies AGIRF8313PBF..735
    • 260:$0.2969
    IRF8313PBF
    DISTI # 26198223    		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
    RoHS: Compliant    		182
    • 25:$0.2929
    IRF8313PBF
    DISTI # IRF8313PBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 9.7A 8-Pin SOIC - Rail/Tube (Alt: IRF8313PBF)
    RoHS: Compliant
    Min Qty: 3800
    Container: Tube    		Americas - 4924
      IRF8313PBF..
      DISTI # 10R3491      		Infineon Technologies AGDUAL N CHANNEL MOSFET, 30V, 9.7A, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:8.1A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V735
      • 1:$0.1930
      • 10:$0.1930
      • 100:$0.1930
      • 500:$0.1930
      • 1000:$0.1930
      • 2500:$0.1930
      • 10000:$0.1930
      IRF8313PBF
      DISTI # 942-IRF8313PBF      		Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
      RoHS: Compliant      		0
        IRF8313PBFInfineon Technologies AGPower Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
        RoHS: Compliant        		1439
        • 1000:$0.2400
        • 500:$0.2500
        • 100:$0.2600
        • 25:$0.2700
        • 1:$0.2900
        IRF8313PBFInternational RectifierPower Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
        RoHS: Compliant        		5182
        • 1000:$0.2400
        • 500:$0.2500
        • 100:$0.2600
        • 25:$0.2700
        • 1:$0.2900
        IRF8313TRPBF
        DISTI # IRF8313PBF-GURT        		Infineon Technologies AG2xN-Ch 30V 9,7A 2,0W 0,0155R SO8
        RoHS: Compliant        		2600
        • 50:€0.2460
        • 100:€0.2060
        • 500:€0.1860
        • 2000:€0.1790
        IRF8313PBF
        DISTI # C1S327400167723        		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
        RoHS: Compliant        		123
        • 50:$0.2240
        • 10:$0.3250
        छवि भाग # विवरण
        IRF8327STRPBF

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        OMO.#: OMO-IRF8327STRPBF

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        IRF830BPBF

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        		 MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS
        IRF830STRL

        Mfr.#: IRF830STRL

        OMO.#: OMO-IRF830STRL

        		 MOSFET RECOMMENDED ALT 844-IRF830STRLPBF
        IRF830AL

        Mfr.#: IRF830AL

        OMO.#: OMO-IRF830AL

        		 MOSFET RECOMMENDED ALT 844-IRF830ALPBF
        IRF8304MTR1PBF

        Mfr.#: IRF8304MTR1PBF

        OMO.#: OMO-IRF8304MTR1PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 28A MX
        IRF830/ SIHF830

        Mfr.#: IRF830/ SIHF830

        OMO.#: OMO-IRF830-SIHF830-1190

        		 नयाँ र मौलिक
        IRF8308MTRPBF.

        Mfr.#: IRF8308MTRPBF.

        OMO.#: OMO-IRF8308MTRPBF--1190

        		 नयाँ र मौलिक
        IRF830B

        Mfr.#: IRF830B

        OMO.#: OMO-IRF830B-1190

        		 Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        IRF8313TRPBF

        Mfr.#: IRF8313TRPBF

        OMO.#: OMO-IRF8313TRPBF-INFINEON-TECHNOLOGIES

        		 MOSFET 2N-CH 30V 9.7A 8-SOIC
        IRF833

        Mfr.#: IRF833

        OMO.#: OMO-IRF833-1190

        		 नयाँ र मौलिक
        उपलब्धता
        स्टक:
        Available
        अर्डर मा:
        2500
        मात्रा प्रविष्ट गर्नुहोस्:
        IRF8313PBF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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