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IRF8313TRPBF

IRF8313TRPBF
Mfr. #:
IRF8313TRPBF
निर्माता:
Infineon Technologies
विवरण:
MOSFET 2N-CH 30V 9.7A 8-SOIC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRF8313TRPBF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IRF8313TRPBF थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
IR
उत्पादन कोटि
FETs - arrays
शृङ्खला
HEXFETR
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
एकाइ - वजन
0.019048 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
8-SOIC (0.154", 3.90mm Width)
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 175°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
2 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
8-SO
कन्फिगरेसन
दोहोरो
FET-प्रकार
2 N-Channel (Dual)
पावर-अधिकतम
2W
ट्रान्जिस्टर-प्रकार
2 N-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
30V
इनपुट-Capacitance-Ciss-Vds
760pF @ 15V
FET - सुविधा
तर्क स्तर गेट
वर्तमान-निरन्तर-नाली-Id-25°C
9.7A
Rds-on-max-Id-Vgs
15.5 mOhm @ 9.7A, 10V
Vgs-th-max-Id
2.35V @ 25μA
गेट-चार्ज-Qg-Vgs
9nC @ 4.5V
Pd-शक्ति-डिसिपेशन
2 W
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
9.7 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
30 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
21.6 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
Qg-गेट-चार्ज
6 nC
Tags
IRF8313TRP, IRF8313T, IRF8313, IRF831, IRF83, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 20, Dual N-Channel MOSFET, 9.7 A, 30 V, 8-Pin SOIC Infineon IRF8313TRPBF
***ure Electronics
Dual N-Channel 30 V 21.6 mOhm 9 nC HEXFET® Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 9.7A 8-Pin SOIC T/R
***ernational Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
***i-Key
MOSFET N-CH DUAL 30V 9.7A 8-SOIC
***ied Electronics & Automation
MOSFET, DUAL N-CHANNEL, 30V, 9.7A, SO-8
***ukat
2xN-Ch 30V 9,7A 2,0W 0,0155R SO8
***ark
Transistor Polarity:dual N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0125Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2W; No. Of Pins:8Pinsrohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, DUAL N CH, 30V, 9.7A, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, DOPPIO CAN. N, 30V, 9.7A, SOIC-8; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:9.7A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0125ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.8V; Dissipazione di Potenza Pd:2W; Modello Case Transistor:SOIC; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IRF8313TRPBF
DISTI # V72:2272_13890321		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC T/R
RoHS: Compliant		7715
  • 6000:$0.2216
  • 3000:$0.2540
  • 1000:$0.2545
  • 500:$0.3033
  • 250:$0.3042
  • 100:$0.3051
  • 25:$0.4214
  • 10:$0.4235
  • 1:$0.4854
IRF8313TRPBF
DISTI # IRF8313TRPBFCT-ND		Infineon Technologies AGMOSFET 2N-CH 30V 9.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		18648In Stock
  • 1000:$0.3542
  • 500:$0.4341
  • 100:$0.5739
  • 10:$0.7340
  • 1:$0.8300
IRF8313TRPBF
DISTI # IRF8313TRPBFDKR-ND		Infineon Technologies AGMOSFET 2N-CH 30V 9.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		18648In Stock
  • 1000:$0.3542
  • 500:$0.4341
  • 100:$0.5739
  • 10:$0.7340
  • 1:$0.8300
IRF8313TRPBF
DISTI # IRF8313TRPBFTR-ND		Infineon Technologies AGMOSFET 2N-CH 30V 9.7A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		16000In Stock
  • 4000:$0.3168
IRF8313TRPBF
DISTI # 31228817		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC T/R
RoHS: Compliant		24000
  • 4000:$0.1910
IRF8313TRPBF
DISTI # 30571752		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC T/R
RoHS: Compliant		7715
  • 6000:$0.2216
  • 3000:$0.2540
  • 1000:$0.2545
  • 500:$0.3033
  • 250:$0.3042
  • 100:$0.3051
  • 36:$0.4214
IRF8313TRPBF
DISTI # SP001577640		Infineon Technologies AGTrans MOSFET N-CH 30V 9.7A 8-Pin SOIC T/R (Alt: SP001577640)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 4000
  • 4000:€0.2769
  • 8000:€0.2269
  • 16000:€0.2079
  • 24000:€0.1919
  • 40000:€0.1779
IRF8313TRPBF
DISTI # IRF8313TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 9.7A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF8313TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.2039
  • 8000:$0.1969
  • 16000:$0.1899
  • 24000:$0.1829
  • 40000:$0.1799
IRF8313TRPBF
DISTI # IRF8313TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 9.7A 8-Pin SOIC T/R (Alt: IRF8313TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
    IRF8313TRPBF
    DISTI # 42Y0424    		Infineon Technologies AGDual MOSFET, Dual N Channel, 9.7 A, 30 V, 0.0125 ohm, 10 V, 1.8 V RoHS Compliant: Yes3489
    • 1:$0.7680
    • 10:$0.6390
    • 25:$0.5690
    • 50:$0.4980
    • 100:$0.4270
    • 250:$0.4010
    • 500:$0.3760
    • 1000:$0.3500
    IRF8313TRPBF.
    DISTI # 27AC6909    		Infineon Technologies AGTransistor Polarity:Dual N Channel,Continuous Drain Current Id:9.7A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0125ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power Dissipation Pd:2W,No. of Pins:8PinsRoHS Compliant: Yes0
      IRF8313TRPBF
      DISTI # 70018020      		Infineon Technologies AGIRF8313TRPBF Dual N-channel MOSFET Transistor,9.7 A,30 V,8-Pin SOIC
      RoHS: Compliant      		0
      • 4000:$0.6800
      IRF8313TRPBF
      DISTI # 942-IRF8313TRPBF      		Infineon Technologies AGMOSFET MOSFT DUAL NCh 30V 9.7A
      RoHS: Compliant      		16922
      • 1:$0.6700
      • 10:$0.5510
      • 100:$0.3550
      • 1000:$0.2840
      • 4000:$0.2400
      • 8000:$0.2310
      • 24000:$0.2220
      IRF8313TRPBFInternational Rectifier9.7 A, 30 V, 0.0155 OHM, 2 CHANNEL, N-CHANNEL, SI, POWER, MOSFET, MS-012AA1095
      • 273:$0.5874
      • 69:$0.7343
      • 1:$1.4685
      IRF8313TRPBF
      DISTI # 8273903P      		Infineon Technologies AGHEXFET N-CH MOSFET 9.7A 30V SOIC8, RL2520
      • 100:£0.2600
      • 500:£0.2350
      • 2000:£0.2060
      • 4000:£0.1740
      IRF8313TRPBF
      DISTI # IRF8313PBF-GURT      		Infineon Technologies AG2xN-Ch 30V 9,7A 2,0W 0,0155R SO8
      RoHS: Compliant      		2600
      • 50:€0.2460
      • 100:€0.2060
      • 500:€0.1860
      • 2000:€0.1790
      IRF8313TRPBF
      DISTI # XSLY00000000869      		INFINEON/IRSO-8
      RoHS: Compliant      		4000
      • 4000:$0.2200
      IRF8313TRPBF
      DISTI # C1S322000487013      		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC T/R
      RoHS: Compliant      		7975
      • 4000:$0.2400
      IRF8313TRPBF
      DISTI # C1S322000487004      		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC T/R
      RoHS: Compliant      		7715
      • 250:$0.3042
      • 100:$0.3051
      • 25:$0.4214
      • 10:$0.4235
      IRF8313TRPBF
      DISTI # 2468027      		Infineon Technologies AGMOSFET, DUAL N CH, 30V, 9.7A, SOIC-8
      RoHS: Compliant      		2789
      • 5:£0.4370
      • 25:£0.3490
      • 100:£0.2650
      • 250:£0.2530
      • 500:£0.2400
      IRF8313TRPBF
      DISTI # 2468027      		Infineon Technologies AGMOSFET, DUAL N CH, 30V, 9.7A, SOIC-8
      RoHS: Compliant      		3519
      • 1:$1.0700
      • 10:$0.8720
      • 100:$0.5620
      • 1000:$0.4500
      • 4000:$0.3810
      • 8000:$0.3660
      • 24000:$0.3560
      IRF8313TRPBF
      DISTI # 2468027RL      		Infineon Technologies AGMOSFET, DUAL N CH, 30V, 9.7A, SOIC-8
      RoHS: Compliant      		0
      • 1:$1.0700
      • 10:$0.8720
      • 100:$0.5620
      • 1000:$0.4500
      • 4000:$0.3810
      • 8000:$0.3660
      • 24000:$0.3560
      छवि भाग # विवरण
      IRF8313TRPBF

      Mfr.#: IRF8313TRPBF

      OMO.#: OMO-IRF8313TRPBF

      		 MOSFET MOSFT DUAL NCh 30V 9.7A
      IRF8313PBF

      Mfr.#: IRF8313PBF

      OMO.#: OMO-IRF8313PBF

      		 MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
      IRF8313TRPBF-CUT TAPE

      Mfr.#: IRF8313TRPBF-CUT TAPE

      OMO.#: OMO-IRF8313TRPBF-CUT-TAPE-1190

      		 नयाँ र मौलिक
      IRF831

      Mfr.#: IRF831

      OMO.#: OMO-IRF831-1190

      		 Power Field-Effect Transistor, 4.5A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      IRF8313

      Mfr.#: IRF8313

      OMO.#: OMO-IRF8313-1190

      		 नयाँ र मौलिक
      IRF8313PBF

      Mfr.#: IRF8313PBF

      OMO.#: OMO-IRF8313PBF-INFINEON-TECHNOLOGIES

      		 Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
      IRF8313TRPBF

      Mfr.#: IRF8313TRPBF

      OMO.#: OMO-IRF8313TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET 2N-CH 30V 9.7A 8-SOIC
      IRF8313TRPBFINFINEON

      Mfr.#: IRF8313TRPBFINFINEON

      OMO.#: OMO-IRF8313TRPBFINFINEON-1190

      		 नयाँ र मौलिक
      IRF831P

      Mfr.#: IRF831P

      OMO.#: OMO-IRF831P-1190

      		 नयाँ र मौलिक
      IRF831PBF

      Mfr.#: IRF831PBF

      OMO.#: OMO-IRF831PBF-1190

      		 नयाँ र मौलिक
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      5000
      मात्रा प्रविष्ट गर्नुहोस्:
      IRF8313TRPBF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.२४
      US$ ०.२४
      10
      US$ ०.२३
      US$ २.२८
      100
      US$ ०.२२
      US$ २१.५७
      500
      US$ ०.२०
      US$ १०१.८५
      1000
      US$ ०.१९
      US$ १९१.७०
      बाट सुरु गर्नुहोस्
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