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IXXK200N65B4

IXXK200N65B4
Mfr. #:
IXXK200N65B4
निर्माता:
Littelfuse
विवरण:
IGBT Transistors 650V/370A TRENCH IGBT GENX4 XPT
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IXXK200N65B4 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IXXK200N65B4 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
IXYS
उत्पादन कोटि
IGBTs - एकल
शृङ्खला
GenX4, XPT
प्याकेजिङ
ट्यूब
एकाइ - वजन
0.373904 oz
माउन्टिङ-शैली
प्वाल मार्फत
ट्रेडनेम
XPT
प्याकेज-केस
TO-264-3, TO-264AA
इनपुट-प्रकार
मानक
माउन्टिङ-प्रकार
प्वाल मार्फत
आपूर्तिकर्ता-उपकरण-प्याकेज
TO-264 (IXXK)
कन्फिगरेसन
एकल
पावर-अधिकतम
1150W
उल्टो-रिकभरी-समय-trr
-
वर्तमान-कलेक्टर-आईसी-मैक्स
370A
भोल्टेज-कलेक्टर-एमिटर-ब्रेकडाउन-अधिकतम
650V
IGBT-प्रकार
PT
वर्तमान-कलेक्टर-स्पंद-आईसीएम
1000A
Vce-on-Max-Vge-Ic
1.7V @ 15V, 160A
स्विचिङ-ऊर्जा
4.4mJ (on), 2.2mJ (off)
गेट चार्ज
553nC
Td-on-off-25°C
62ns/245ns
परीक्षण अवस्था
400V, 100A, 1 Ohm, 15V
Pd-शक्ति-डिसिपेशन
1150 W
अधिकतम-सञ्चालन-तापमान
+ 175 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
कलेक्टर-एमिटर-भोल्टेज-VCEO-अधिकतम
650 V
कलेक्टर-एमिटर-स्याचुरेसन-भोल्टेज
1.4 V
निरन्तर-कलेक्टर-वर्तमान-मा-25-C
370 A
गेट-एमिटर-लीकेज-करेन्ट
200 nA
अधिकतम-गेट-एमिटर-भोल्टेज
20 V
निरन्तर-कलेक्टर-वर्तमान-आईसी-अधिकतम
200 A
Tags
IXXK2, IXXK, IXX
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IXXK200N65B4
DISTI # IXXK200N65B4-ND		IXYS CorporationIGBT 650V 370A 1150W TO264
RoHS: Compliant
Min Qty: 1
Container: Tube		290In Stock
  • 250:$13.2641
  • 100:$14.5478
  • 25:$15.8312
  • 10:$17.1150
  • 1:$18.8300
IXXK200N65B4
DISTI # 747-IXXK200N65B4		IXYS CorporationIGBT Transistors 650V/370A TRENCH IGBT GENX4 XPT
RoHS: Compliant		48
  • 1:$17.9300
  • 10:$16.3000
  • 25:$15.0800
  • 50:$14.2100
  • 100:$13.8600
  • 250:$12.6300
  • 500:$11.8200
छवि भाग # विवरण
IXXK200N65B4

Mfr.#: IXXK200N65B4

OMO.#: OMO-IXXK200N65B4

 IGBT Transistors 650V/370A TRENCH IGBT GENX4 XPT
IXXK200N60C3

Mfr.#: IXXK200N60C3

OMO.#: OMO-IXXK200N60C3

 IGBT Transistors XPT 600V IGBT GenX3
IXXK200N60B3

Mfr.#: IXXK200N60B3

OMO.#: OMO-IXXK200N60B3

 IGBT Transistors GenX3 XPT 600V
IXXK200N65B4

Mfr.#: IXXK200N65B4

OMO.#: OMO-IXXK200N65B4-IXYS-CORPORATION

 IGBT Transistors 650V/370A TRENCH IGBT GENX4 XPT
IXXK200N60C3

Mfr.#: IXXK200N60C3

OMO.#: OMO-IXXK200N60C3-IXYS-CORPORATION

 IGBT Transistors XPT 600V IGBT GenX3
IXXK200N60B3

Mfr.#: IXXK200N60B3

OMO.#: OMO-IXXK200N60B3-IXYS-CORPORATION

 IGBT Transistors GenX3 XPT 600V
उपलब्धता
स्टक:
Available
अर्डर मा:
1000
मात्रा प्रविष्ट गर्नुहोस्:
IXXK200N65B4 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १७.७३
US$ १७.७३
10
US$ १६.८४
US$ १६८.४४
100
US$ १५.९६
US$ १ ५९५.७०
500
US$ १५.०७
US$ ७ ५३५.२५
1000
US$ १४.१८
US$ १४ १८४.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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