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STGW25M120DF3

STGW25M120DF3
Mfr. #:
STGW25M120DF3
निर्माता:
STMicroelectronics
विवरण:
IGBT 1200V 50A 375W
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
STGW25M120DF3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
STGW25M120DF3 थप जानकारी STGW25M120DF3 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन कोटि
IGBTs - एकल
शृङ्खला
900-1300V IGBTs
प्याकेजिङ
ट्यूब
एकाइ - वजन
1.340411 oz
माउन्टिङ-शैली
प्वाल मार्फत
प्याकेज-केस
TO-247-3
इनपुट-प्रकार
मानक
माउन्टिङ-प्रकार
प्वाल मार्फत
आपूर्तिकर्ता-उपकरण-प्याकेज
TO-247-3
कन्फिगरेसन
एकल
पावर-अधिकतम
375W
उल्टो-रिकभरी-समय-trr
265ns
वर्तमान-कलेक्टर-आईसी-मैक्स
50A
भोल्टेज-कलेक्टर-एमिटर-ब्रेकडाउन-अधिकतम
1200V
IGBT-प्रकार
ट्रेन्च फिल्ड स्टप
वर्तमान-कलेक्टर-स्पंद-आईसीएम
100A
Vce-on-Max-Vge-Ic
2.3V @ 15V, 25A
स्विचिङ-ऊर्जा
850μJ (on), 1.3mJ (off)
गेट चार्ज
85nC
Td-on-off-25°C
28ns/150ns
परीक्षण अवस्था
600V, 25A, 15 Ohm, 15V
Pd-शक्ति-डिसिपेशन
326 W
अधिकतम-सञ्चालन-तापमान
+ 175 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
कलेक्टर-एमिटर-भोल्टेज-VCEO-अधिकतम
1200 V
कलेक्टर-एमिटर-स्याचुरेसन-भोल्टेज
1.85 V
निरन्तर-कलेक्टर-वर्तमान-मा-25-C
50 A
गेट-एमिटर-लीकेज-करेन्ट
250 nA
अधिकतम-गेट-एमिटर-भोल्टेज
20 V
Tags
STGW25, STGW2, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
STMicroelectronics M Series Trench Gate Field-Stop IGBTs
STMicroelectronics M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. They represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.Learn More
भाग # Mfg। विवरण स्टक मूल्य
STGW25M120DF3
DISTI # 497-15058-5-ND		STMicroelectronicsIGBT 1200V 50A 375W
RoHS: Compliant
Min Qty: 600
Container: Tube		Temporarily Out of Stock
  • 600:$6.5430
STGW25M120DF3
DISTI # STGW25M120DF3		STMicroelectronicsTrans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW25M120DF3)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$5.2900
  • 1200:$5.0900
  • 2400:$4.8900
  • 3600:$4.5900
  • 6000:$4.4900
STGW25M120DF3
DISTI # STGW25M120DF3		STMicroelectronicsTrans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube (Alt: STGW25M120DF3)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 30:€3.7100
STGW25M120DF3
DISTI # 511-STGW25M120DF3		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
RoHS: Compliant		0
  • 1:$8.5700
  • 10:$7.7500
  • 25:$7.3900
  • 100:$6.4100
  • 250:$6.1300
  • 500:$5.5800
STGW25M120DF3
DISTI # IGBT1559		STMicroelectronicsIGBT 1200V 25A 1,85VTO247-3
RoHS: Compliant		Stock DE - 0Stock US - 0
  • 600:$4.8700
STGW25M120DF3STMicroelectronics 
RoHS: Compliant		Europe - 600
    STGW25M120DF3
    DISTI # STGW25M120DF3    		STMicroelectronics1200V 50A 375W TO247
    RoHS: Not Compliant    		50
    • 5:€4.9600
    • 30:€4.3600
    • 120:€4.0600
    • 300:€3.9100
    STGW25M120DF3
    DISTI # 2470026    		STMicroelectronicsIGBT, SINGLE, 1.2KV, 50A, TO-247-3
    RoHS: Compliant    		0
    • 1:£7.0300
    • 5:£6.4800
    • 10:£5.5900
    • 50:£5.2200
    • 100:£4.8500
    STGW25M120DF3
    DISTI # C1S730200974138    		STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		600
    • 600:$4.3100
    • 300:$4.6800
    • 100:$5.1400
    • 50:$5.9200
    • 10:$5.9800
    • 1:$8.2500
    छवि भाग # विवरण
    STGW25M120DF3

    Mfr.#: STGW25M120DF3

    OMO.#: OMO-STGW25M120DF3

    		 IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
    STGW25H120F2

    Mfr.#: STGW25H120F2

    OMO.#: OMO-STGW25H120F2

    		 IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
    STGW25H120DF2

    Mfr.#: STGW25H120DF2

    OMO.#: OMO-STGW25H120DF2

    		 IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
    STGW25S120DF3

    Mfr.#: STGW25S120DF3

    OMO.#: OMO-STGW25S120DF3

    		 IGBT Transistors IGBT & Power Bipolar
    STGW25M120DF3

    Mfr.#: STGW25M120DF3

    OMO.#: OMO-STGW25M120DF3-STMICROELECTRONICS

    		 IGBT 1200V 50A 375W
    STGW25H120DF2

    Mfr.#: STGW25H120DF2

    OMO.#: OMO-STGW25H120DF2-STMICROELECTRONICS

    		 IGBT Transistors IGBT & Power Bipola
    STGW25H120F2

    Mfr.#: STGW25H120F2

    OMO.#: OMO-STGW25H120F2-STMICROELECTRONICS

    		 IGBT H-SERIES 1200V 25A TO-247
    STGW25H120DF

    Mfr.#: STGW25H120DF

    OMO.#: OMO-STGW25H120DF-1190

    		 नयाँ र मौलिक
    STGW25H120F

    Mfr.#: STGW25H120F

    OMO.#: OMO-STGW25H120F-1190

    		 नयाँ र मौलिक
    STGW25N120DF2

    Mfr.#: STGW25N120DF2

    OMO.#: OMO-STGW25N120DF2-1190

    		 नयाँ र मौलिक
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    3500
    मात्रा प्रविष्ट गर्नुहोस्:
    STGW25M120DF3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ६.७४
    US$ ६.७४
    10
    US$ ६.४०
    US$ ६३.९८
    100
    US$ ६.०६
    US$ ६०६.१५
    500
    US$ ५.७२
    US$ २ ८६२.४०
    1000
    US$ ५.३९
    US$ ५ ३८८.००
    बाट सुरु गर्नुहोस्
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