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FJBE2150DTU

FJBE2150DTU
Mfr. #:
FJBE2150DTU
निर्माता:
ON Semiconductor / Fairchild
विवरण:
Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FJBE2150DTU डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FJBE2150DTU Datasheet
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
द्विध्रुवी ट्रान्जिस्टर - BJT
RoHS:
Y
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
D2PAK-3
ट्रान्जिस्टर ध्रुवता:
NPN
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
800 V
कलेक्टर - आधार भोल्टेज VCBO:
1.25 kV
उत्सर्जक - आधार भोल्टेज VEBO:
12 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
0.25 V
अधिकतम DC कलेक्टर वर्तमान:
2 A
ब्यान्डविथ उत्पादन एफटी प्राप्त गर्नुहोस्:
5 MHz
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 125 C
शृङ्खला:
FJBE2150D
DC वर्तमान लाभ hFE अधिकतम:
35
प्याकेजिङ:
ट्यूब
ब्रान्ड:
सेमीकन्डक्टर / फेयरचाइल्डमा
निरन्तर कलेक्टर वर्तमान:
0.5 A
DC कलेक्टर/बेस गेन hfe न्यूनतम:
20
Pd - शक्ति अपव्यय:
110 W
उत्पादन प्रकार:
BJTs - द्विध्रुवी ट्रान्जिस्टर
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
ट्रान्जिस्टरहरू
एकाइ वजन:
0.066315 oz
Tags
FJB
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Trans GP BJT NPN 800V 2A 110000mW 3-Pin(2+Tab) D2PAK Rail
***r Electronics
Power Bipolar Transistor, 2A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin
***rchild Semiconductor
The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1500 volts and up to 3 amps, while providing exceptionally low on-resistance and very low switching losses.The ESBC™ switch is designed to be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance.The FJBE2150D provides exceptional reliability and a large operating range due to its square Reverse-Bias-Safe-Operating-Area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures.The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in high-voltage HV-D2PAK rated at 2500 V creepage and clearance.
भाग # Mfg। विवरण स्टक मूल्य
FJBE2150DTU
DISTI # FJBE2150DTU-ND		ON SemiconductorTRANS NPN 800V 2A D2-PAK-2L
RoHS: Compliant
Container: Tube		Limited Supply - Call
    FJBE2150DTU
    DISTI # 96W6437    		ON SemiconductorNPN/1250V/3A / RAIL0
      छवि भाग # विवरण
      FJBE2150DTU

      Mfr.#: FJBE2150DTU

      OMO.#: OMO-FJBE2150DTU

      		 Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
      FJBE2150DTU

      Mfr.#: FJBE2150DTU

      OMO.#: OMO-FJBE2150DTU-ON-SEMICONDUCTOR

      		 TRANS NPN 800V 2A D2-PAK-2L
      FJBE2150D

      Mfr.#: FJBE2150D

      OMO.#: OMO-FJBE2150D-1190

      		 नयाँ र मौलिक
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      3500
      मात्रा प्रविष्ट गर्नुहोस्:
      FJBE2150DTU को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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