FJBE2150D

FJBE2150D
Mfr. #:
FJBE2150D
निर्माता:
Fairchild Semiconductor
विवरण:
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FJBE2150D डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
फेयरचाइल्ड सेमीकन्डक्टर
उत्पादन कोटि
ट्रान्जिस्टर - द्विध्रुवी (BJT) - RF
प्याकेजिङ
ट्यूब
एकाइ - वजन
0.066315 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
D2PAK-2
कन्फिगरेसन
एकल
Pd-शक्ति-डिसिपेशन
110 W
अधिकतम-सञ्चालन-तापमान
+ 125 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
कलेक्टर-एमिटर-भोल्टेज-VCEO-अधिकतम
800 V
ट्रान्जिस्टर-ध्रुवता
NPN
कलेक्टर-एमिटर-स्याचुरेसन-भोल्टेज
0.25 V
कलेक्टर-बेस-भोल्टेज-VCBO
1.25 kV
उत्सर्जक-बेस-भोल्टेज-VEBO
12 V
अधिकतम-DC-कलेक्टर-वर्तमान
2 A
लाभ-ब्यान्डविथ-उत्पादन-fT
5 MHz
निरन्तर-कलेक्टर-वर्तमान
0.5 A
DC-कलेक्टर-बेस-गेन-hfe-मिन
20
DC-वर्तमान-लाभ-hFE-अधिकतम
35
Tags
FJB
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
ESBC™ Rated NPN Silicon Transistor
***rchild Semiconductor
The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1250 volts and up to 3 amps, while providing exceptionally low on-resistance and very low switching losses.The ESBC™ switch is designed to be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance.The FJBE2150D provides exceptional reliability and a large operating range due to its square Reverse-Bias-Safe-Operating-Area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures.The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in high-voltage HV-D2PAK rated at 2500 V creepage and clearance.
भाग # Mfg। विवरण स्टक मूल्य
FJBE2150DTU
DISTI # FJBE2150DTU-ND
ON SemiconductorTRANS NPN 800V 2A D2-PAK-2L
RoHS: Compliant
Container: Tube
Limited Supply - Call
    FJBE2150DTU
    DISTI # FJBE2150DTU
    ON SemiconductorTrans GP BJT NPN 800V 2A 3-Pin D2PAK Tube (Alt: FJBE2150DTU)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1:€1.1079
    • 10:€0.9849
    • 25:€0.8869
    • 50:€0.8059
    • 100:€0.7389
    • 500:€0.6819
    • 1000:€0.6329
    FJBE2150DTU
    DISTI # 96W6437
    ON SemiconductorNPN/1250V/3A / RAIL0
    • 1:$1.5500
    • 10:$1.2500
    • 100:$1.0000
    • 500:$0.8750
    • 1000:$0.7250
    • 2500:$0.6650
    • 10000:$0.6350
    FJBE2150DTU
    DISTI # 512-FJBE2150DTU
    ON SemiconductorBipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
    RoHS: Compliant
    0
      छवि भाग # विवरण
      FJBE2150DTU

      Mfr.#: FJBE2150DTU

      OMO.#: OMO-FJBE2150DTU

      Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
      FJBE2150DTU

      Mfr.#: FJBE2150DTU

      OMO.#: OMO-FJBE2150DTU-ON-SEMICONDUCTOR

      TRANS NPN 800V 2A D2-PAK-2L
      FJBE2150D

      Mfr.#: FJBE2150D

      OMO.#: OMO-FJBE2150D-1190

      नयाँ र मौलिक
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      2500
      मात्रा प्रविष्ट गर्नुहोस्:
      FJBE2150D को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.००
      US$ ०.००
      10
      US$ ०.००
      US$ ०.००
      100
      US$ ०.००
      US$ ०.००
      500
      US$ ०.००
      US$ ०.००
      1000
      US$ ०.००
      US$ ०.००
      बाट सुरु गर्नुहोस्
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