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RJH1CV5DPQ-E0#T2

RJH1CV5DPQ-E0#T2
Mfr. #:
RJH1CV5DPQ-E0#T2
निर्माता:
Renesas Electronics
विवरण:
IGBT Transistors IGBT
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
RJH1CV5DPQ-E0#T2 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
रेनेसास इलेक्ट्रोनिक्स
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेजिङ:
ट्यूब
ब्रान्ड:
रेनेसास इलेक्ट्रोनिक्स
नमी संवेदनशील:
हो
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
1
उपश्रेणी:
IGBTs
Tags
RJH1CV5, RJH1CV, RJH1C, RJH1, RJH
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube
***i-Key
IGBT 1200V 50A 245W TO247
***egrated Device Technology
IGBT for Inverter Applications
*** Electronic Components
IGBT Transistors IGBT
***ical
Trans IGBT Chip N-CH 1200V 50A 365000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT+ DIODE,1200V,25A,TO247; Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:1.8V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; Power Dissipation Max:365W
***ineon SCT
The 2nd generation of reverse conducting 1200 V, 25 A TRENCHSTOP™ RC-IGBT3 and Fieldstop technology with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for lower switching and conduction losses, PG-TO247-3, RoHS
***ineon
IGBT 600V in TRENCHSTOP and Fieldstop technology with optimised diode. | Summary of Features: Best-in-class V CEsat and V f for outstanding efficiency; Lowest switching losses; Stable temperature behavior; Soft current turn-off waveforms; High breakthrough voltage; Resistance to current spikes over the SOA | Benefits: Lowest power dissipation; Better thermal management; Lower cost for heat sink, cooling and EMI filtering; Highest device safety and reliability; Reduced system costs; Best-in-class performance for competitive price
***ark
Igbt Single Transistor, 50 A, 2 V, 385 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 385W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***p One Stop
Trans IGBT Chip N-CH 1200V 50A 190000mW 3-Pin(3+Tab) TO-247 Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 9.4pF 25volts C0G +/-0.25pF
***ment14 APAC
IGBT,1200V,25A,TO247; Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:190W
***ineon SCT
Infineon's 1200 V, 25 A single TRENCHSTOP™ IGBT3 in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications
*** Source Electronics
Trans IGBT Chip N-CH 1200V 50A 190000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 50A 190W TO247-3
***ure Electronics
IKW25T120FKSA1 Series 1200 V 50 A 190 W IGBT in TrenchStop - PG-TO247-3-1
***ource
IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: TRENCHSTOP™ 2-20kHz; Package: TO-247; VCE max: 1,200.0 V; ICmax @ 25°: 50.0 A; ICmax @ 100°: 25.0 A
***ment14 APAC
IGBT, N, 1200V, 25A, TO-247; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:25A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:190W; Power Dissipation Pd:190W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications
***et
Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-3P(N) Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AB
***emi
IGBT, 1200V, 25A, Field Stop Trench
***ark
Fs1Tigbt To247 25A 1200V Rohs Compliant: Yes
***rchild Semiconductor
Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
***ical
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
*** Electronics
STMICROELECTRONICS STGW20NC60VD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
***ser
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 30 Amp
***(Formerly Allied Electronics)
Transistor IGBT N-Ch 600V 60A TO247
***nell
IGBT, 600V, 20A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
*** Services
CoC and 2-years warranty / RFQ for pricing
***S
French Electronic Distributor since 1988
छवि भाग # विवरण
RJH1CV5DPK-00#T0

Mfr.#: RJH1CV5DPK-00#T0

OMO.#: OMO-RJH1CV5DPK-00-T0

 IGBT Transistors IGBT
RJH1CV5DPQ-E0#T2

Mfr.#: RJH1CV5DPQ-E0#T2

OMO.#: OMO-RJH1CV5DPQ-E0-T2

 IGBT Transistors IGBT
RJH1CV5DPQ-E0_13

Mfr.#: RJH1CV5DPQ-E0_13

OMO.#: OMO-RJH1CV5DPQ-E0-13-1190

 नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
1500
मात्रा प्रविष्ट गर्नुहोस्:
RJH1CV5DPQ-E0#T2 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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