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IXYH75N65C3H1

IXYH75N65C3H1
Mfr. #:
IXYH75N65C3H1
निर्माता:
Littelfuse
विवरण:
IGBT Transistors 650V/170A XPT C3-Class TO-247
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IXYH75N65C3H1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYH75N65C3H1 DatasheetIXYH75N65C3H1 Datasheet (P4-P6)IXYH75N65C3H1 Datasheet (P7)
ECAD Model:
थप जानकारी:
IXYH75N65C3H1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
IXYS
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेज / केस:
TO-247AD-3
माउन्टिङ शैली:
प्वाल मार्फत
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
650 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
1.8 V
अधिकतम गेट एमिटर भोल्टेज:
30 V
25 C मा निरन्तर कलेक्टर वर्तमान:
170 A
Pd - शक्ति अपव्यय:
750 W
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
शृङ्खला:
IXYH75N65
प्याकेजिङ:
ट्यूब
निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:
170 A
ब्रान्ड:
IXYS
गेट-एमिटर चुहावट वर्तमान:
100 nA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
30
उपश्रेणी:
IGBTs
व्यापार नाम:
XPT
एकाइ वजन:
1.340411 oz
Tags
IXYH75N6, IXYH7, IXYH, IXY
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
650 V 170 A Through Hole IGBT GenX3TM w/ Sonic Diode - TO-247
***i-Key
IGBT 650V 170A 750W TO247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IXYH75N65C3H1
DISTI # IXYH75N65C3H1-ND		IXYS CorporationIGBT 650V 170A 750W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		60In Stock
  • 510:$8.2215
  • 270:$8.7885
  • 120:$9.6390
  • 30:$10.4897
  • 10:$11.3400
  • 1:$12.4700
IXYH75N65C3H1
DISTI # 747-IXYH75N65C3H1		IXYS CorporationIGBT Transistors 650V/170A XPT C3-Class TO-247
RoHS: Compliant		0
  • 1:$11.8800
  • 10:$10.8000
  • 25:$9.9900
  • 50:$9.4100
  • 100:$9.1800
  • 250:$8.3700
  • 500:$7.8300
छवि भाग # विवरण
IXYH75N65C3H1

Mfr.#: IXYH75N65C3H1

OMO.#: OMO-IXYH75N65C3H1

 IGBT Transistors 650V/170A XPT C3-Class TO-247
IXYH75N65C3

Mfr.#: IXYH75N65C3

OMO.#: OMO-IXYH75N65C3

 IGBT Transistors 650V/170A XPT C3-Class TO-247
IXYH75N65C3D1

Mfr.#: IXYH75N65C3D1

OMO.#: OMO-IXYH75N65C3D1

 IGBT Transistors DISC IGBT XPT-GENX3
IXYH75N120B4

Mfr.#: IXYH75N120B4

OMO.#: OMO-IXYH75N120B4-IXYS-CORPORATION

 IGBT
IXYH75N65C3

Mfr.#: IXYH75N65C3

OMO.#: OMO-IXYH75N65C3-IXYS-CORPORATION

 IGBT Transistors 650V/170A XPT C3-Class TO-247
IXYH75N65C3H1

Mfr.#: IXYH75N65C3H1

OMO.#: OMO-IXYH75N65C3H1-IXYS-CORPORATION

 IGBT Transistors 650V/170A XPT C3-Class TO-247
उपलब्धता
स्टक:
Available
अर्डर मा:
1000
मात्रा प्रविष्ट गर्नुहोस्:
IXYH75N65C3H1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ११.८८
US$ ११.८८
10
US$ १०.८०
US$ १०८.००
25
US$ ९.९९
US$ २४९.७५
50
US$ ९.४१
US$ ४७०.५०
100
US$ ९.१८
US$ ९१८.००
250
US$ ८.३७
US$ २ ०९२.५०
500
US$ ७.८३
US$ ३ ९१५.००
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