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IXFN360N10T

IXFN360N10T
Mfr. #:
IXFN360N10T
निर्माता:
Littelfuse
विवरण:
MOSFET 360 Amps 100V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IXFN360N10T डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN360N10T DatasheetIXFN360N10T Datasheet (P4-P5)
ECAD Model:
थप जानकारी:
IXFN360N10T थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
IXYS
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
चेसिस माउन्ट
प्याकेज / केस:
SOT-227-4
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
100 V
आईडी - निरन्तर ड्रेन वर्तमान:
360 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
2.6 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.5 V
Vgs - गेट-स्रोत भोल्टेज:
10 V
Qg - गेट चार्ज:
525 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
830 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
HiPerFET
प्याकेजिङ:
ट्यूब
उत्पादन:
MOSFET पावर
शृङ्खला:
IXFN360N10
ट्रान्जिस्टर प्रकार:
1 N-Channel
प्रकार:
पावर MOSFET
ब्रान्ड:
IXYS
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
110 S
पतन समय:
160 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
100 ns
कारखाना प्याक मात्रा:
10
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
80 ns
सामान्य टर्न-अन ढिलाइ समय:
47 ns
एकाइ वजन:
1.058219 oz
Tags
IXFN360, IXFN36, IXFN3, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 10, N-Channel MOSFET, 360 A, 100 V, 4-Pin SOT-227 IXYS IXFN360N10T
***ure Electronics
Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B
***p One Stop Japan
Trans MOSFET N-CH 100V 360A 4-Pin SOT-227B
*** Source Electronics
GigaMOS Trench HiperFET Power MOSFET
***i-Key
MOSFET N-CH 100V 360A SOT-227B
***ukat
N-Ch 100V 360A 830W 0,0026R SOT227B
***ark
Mosfet Module, N-Ch, 100V, 360A; Transistor Polarity:n Channel; Continuous Drain Current Id:360A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0026Ohm; Rds(On) Test Voltage Vgs:100V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET MODULE, N-CH, 100V, 360A; Transistor Polarity:N Channel; Continuous Drain Current Id:360A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:100V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:830W; Operating Temperature Max:175°C; Product Range:Trench HiperFET Series; SVHC:No SVHC (07-Jul-2017)
***nell
MODULO MOSFET, CA-N, 100V, 360A; Polarità Transistor:Canale N; Corrente Continua di Drain Id:360A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0026ohm; Tensione Vgs di Misura Rds(on):100V; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:830W; Temperatura di Esercizio Max:175°C; Gamma Prodotti:Trench HiperFET Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
भाग # Mfg। विवरण स्टक मूल्य
IXFN360N10T
DISTI # V36:1790_15877367		IXYS CorporationTrans MOSFET N-CH 100V 360A 4-Pin SOT-227B
RoHS: Compliant		0
    IXFN360N10T
    DISTI # IXFN360N10T-ND    		IXYS CorporationMOSFET N-CH 100V 360A SOT-227B
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		608In Stock
    • 500:$13.8330
    • 100:$16.2180
    • 30:$17.6490
    • 10:$19.0800
    • 1:$20.9900
    IXFN360N10T
    DISTI # 747-IXFN360N10T    		IXYS CorporationMOSFET 360 Amps 100V
    RoHS: Compliant    		591
    • 1:$20.9900
    • 10:$19.0800
    • 20:$17.6400
    • 50:$16.9200
    • 100:$16.2100
    • 200:$14.7800
    • 500:$13.8300
    IXFN360N10T
    DISTI # 1258041    		IXYS CorporationMOSFET 360A 100V SOT227, EA79
    • 20:£13.5700
    • 10:£13.8500
    • 5:£14.3500
    • 2:£15.0200
    • 1:£16.6800
    IXFN360N10T
    DISTI # IXFN360N10T    		IXYS CorporationModule,single transistor,100V,360A,SOT227B,Ugs: ±30V,screw58
    • 10:$15.6500
    • 3:$17.7900
    • 1:$19.7100
    IXFN360N10T
    DISTI # IXFN360N10T    		IXYS CorporationN-Ch 100V 360A 830W 0,0026R SOT227B
    RoHS: Compliant    		46
    • 1:€16.5000
    • 5:€13.5000
    • 10:€12.5000
    • 25:€12.0500
    IXFN360N10T
    DISTI # 2784061    		IXYS CorporationMOSFET MODULE, N-CH, 100V, 360A
    RoHS: Compliant    		11
    • 100:£11.7300
    • 50:£13.4300
    • 10:£14.0000
    • 5:£15.3300
    • 1:£16.6500
    IXFN360N10T
    DISTI # 2784061    		IXYS CorporationMOSFET MODULE, N-CH, 100V, 360A
    RoHS: Compliant    		0
    • 100:$21.3700
    • 50:$22.0400
    • 10:$22.8200
    • 5:$24.1200
    • 1:$24.5800
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    उपलब्धता
    स्टक:
    586
    अर्डर मा:
    2569
    मात्रा प्रविष्ट गर्नुहोस्:
    IXFN360N10T को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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