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SIHB12N60ET5-GE3

SIHB12N60ET5-GE3
Mfr. #:
SIHB12N60ET5-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET N-Channel 600V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHB12N60ET5-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIHB12N60ET5-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
650 V
आईडी - निरन्तर ड्रेन वर्तमान:
12 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
380 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
29 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
147 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
उचाइ:
4.83 mm
लम्बाइ:
10.67 mm
शृङ्खला:
E
चौडाइ:
9.65 mm
ब्रान्ड:
Vishay / Siliconix
पतन समय:
19 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
19 ns
कारखाना प्याक मात्रा:
800
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
35 ns
सामान्य टर्न-अन ढिलाइ समय:
14 ns
एकाइ वजन:
0.077603 oz
Tags
SIHB12N60, SIHB12N6, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 600V 12A TO263
***ronik
N-CH 600V 12A 380mOhm TO-263
***ark
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHB12N60ET5-GE3
DISTI # SIHB12N60ET5-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 12A TO263
RoHS: Not compliant
Min Qty: 1
Container: Bulk		800In Stock
  • 5000:$0.9145
  • 2500:$0.9497
  • 1000:$1.0201
  • 500:$1.2311
  • 100:$1.4985
  • 10:$1.8640
  • 1:$2.0800
SIHB12N60ET5-GE3
DISTI # SIHB12N60ET5-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 12A 3-Pin D2PAK T/R - Bulk (Alt: SIHB12N60ET5-GE3)
RoHS: Not Compliant
Min Qty: 800
Container: Bulk		Americas - 0
  • 8000:$0.8579
  • 4800:$0.8819
  • 3200:$0.9069
  • 1600:$0.9459
  • 800:$0.9749
SIHB12N60ET5-GE3
DISTI # 78-SIHB12N60ET5-GE3		Vishay IntertechnologiesMOSFET N-Channel 600V
RoHS: Compliant		0
  • 800:$1.1700
  • 1600:$0.9710
  • 3200:$0.9040
  • 5600:$0.8710
SIHB12N60ET5-GE3
DISTI # TMOS2029		Vishay IntertechnologiesN-CH 600V 12A 380mOhm TO-263
RoHS: Compliant		Stock DE - 3200Stock HK - 0Stock US - 0
  • 800:$1.3400
  • 1600:$1.2600
  • 2400:$1.1800
  • 3200:$1.0334
छवि भाग # विवरण
SIHB12N65E-GE3

Mfr.#: SIHB12N65E-GE3

OMO.#: OMO-SIHB12N65E-GE3

 MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
SIHB12N60E-GE3

Mfr.#: SIHB12N60E-GE3

OMO.#: OMO-SIHB12N60E-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB12N60ET1-GE3

Mfr.#: SIHB12N60ET1-GE3

OMO.#: OMO-SIHB12N60ET1-GE3

 MOSFET N-Channel 600V
SIHB12N60E-GE3

Mfr.#: SIHB12N60E-GE3

OMO.#: OMO-SIHB12N60E-GE3-VISHAY

 Darlington Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
SIHB12N65E-GE3

Mfr.#: SIHB12N65E-GE3

OMO.#: OMO-SIHB12N65E-GE3-VISHAY

 IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS
SIHB12N60E

Mfr.#: SIHB12N60E

OMO.#: OMO-SIHB12N60E-1190

 नयाँ र मौलिक
SIHB12N60EGE3

Mfr.#: SIHB12N60EGE3

OMO.#: OMO-SIHB12N60EGE3-1190

 Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
SIHB12N65E

Mfr.#: SIHB12N65E

OMO.#: OMO-SIHB12N65E-1190

 नयाँ र मौलिक
SIHB12N60ET1-GE3

Mfr.#: SIHB12N60ET1-GE3

OMO.#: OMO-SIHB12N60ET1-GE3-VISHAY

 MOSFET N-CH 600V 12A TO263
SIHB12N60ET5-GE3

Mfr.#: SIHB12N60ET5-GE3

OMO.#: OMO-SIHB12N60ET5-GE3-VISHAY

 MOSFET N-CH 600V 12A TO263
उपलब्धता
स्टक:
Available
अर्डर मा:
5500
मात्रा प्रविष्ट गर्नुहोस्:
SIHB12N60ET5-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
800
US$ १.१७
US$ ९३६.००
1600
US$ ०.९७
US$ १ ५५३.६०
3200
US$ ०.९०
US$ २ ८९२.८०
5600
US$ ०.८७
US$ ४ ८७७.६०
10400
US$ ०.८४
US$ ८ ७०४.८०
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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