SIHB12N65E-GE3

SIHB12N65E-GE3
Mfr. #:
SIHB12N65E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHB12N65E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB12N65E-GE3 Datasheet
ECAD Model:
थप जानकारी:
SIHB12N65E-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220FP-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
700 V
आईडी - निरन्तर ड्रेन वर्तमान:
12 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
380 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
35 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
156 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
थोक
शृङ्खला:
E
ब्रान्ड:
Vishay / Siliconix
पतन समय:
18 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
19 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
35 ns
सामान्य टर्न-अन ढिलाइ समय:
16 ns
एकाइ वजन:
0.050717 oz
Tags
SIHB12N6, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N-Channel 650 V 380 mO 35 nC Surface Mount Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 650V 12A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N CH, 650V, 12A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.33ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Powe
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHB12N65E-GE3
DISTI # V36:1790_09219044
Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin(2+Tab) D2PAK
RoHS: Compliant
0
  • 1000000:$1.2910
  • 500000:$1.2950
  • 100000:$1.7320
  • 10000:$2.5750
  • 1000:$2.7200
SIHB12N65E-GE3
DISTI # SIHB12N65E-GE3-ND
Vishay SiliconixMOSFET N-CH 650V 12A D2PAK
Min Qty: 1
Container: Tube
3000In Stock
  • 5000:$1.2594
  • 2500:$1.2783
  • 1000:$1.3730
  • 500:$1.6571
  • 100:$2.0169
  • 10:$2.5090
  • 1:$2.7900
SIHB12N65E-GE3
DISTI # SIHB12N65E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin D2PAK - Tape and Reel (Alt: SIHB12N65E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 4000:$1.1900
  • 6000:$1.1900
  • 10000:$1.1900
  • 1000:$1.2900
  • 2000:$1.2900
SIHB12N65E-GE3
DISTI # SIHB12N65E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin D2PAK (Alt: SIHB12N65E-GE3)
Min Qty: 1
Europe - 0
    SIHB12N65E-GE3
    DISTI # 99W9446
    Vishay IntertechnologiesN-CHANNEL 650V
    RoHS: Not Compliant
    0
    • 1000:$1.6300
    • 500:$1.7400
    • 250:$1.8700
    • 100:$2.0400
    • 1:$2.4900
    SIHB12N65E-GE3
    DISTI # 78-SIHB12N65E-GE3
    Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant
    2000
    • 1:$2.7900
    • 10:$2.3600
    • 100:$1.9400
    • 500:$1.8100
    • 1000:$1.3700
    • 2000:$1.2700
    • 5000:$1.2500
    SIHB12N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant
    Americas -
      SIHB12N65E-GE3
      DISTI # 2400357
      Vishay IntertechnologiesMOSFET, N CH, 650V, 12A, TO-263-3
      RoHS: Compliant
      289
      • 5000:$1.9400
      • 3000:$2.0100
      • 1000:$2.1600
      • 100:$3.1700
      • 25:$3.7200
      • 10:$3.9500
      • 1:$4.3800
      SIHB12N65E-GE3
      DISTI # 2400357
      Vishay IntertechnologiesMOSFET, N CH, 650V, 12A, TO-263-3
      RoHS: Compliant
      289
      • 1000:£1.0400
      • 500:£1.3500
      • 250:£1.4400
      • 100:£1.5400
      • 10:£1.9900
      • 1:£2.7200
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      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      1985
      मात्रा प्रविष्ट गर्नुहोस्:
      SIHB12N65E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ २.९४
      US$ २.९४
      10
      US$ २.४४
      US$ २४.४०
      100
      US$ १.८९
      US$ १८९.००
      500
      US$ १.६५
      US$ ८२५.००
      1000
      US$ १.३७
      US$ १ ३७०.००
      2000
      US$ १.२७
      US$ २ ५४०.००
      5000
      US$ १.२३
      US$ ६ १५०.००
      10000
      US$ १.१८
      US$ ११ ८००.००
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