SQJQ900E-T1_GE3

SQJQ900E-T1_GE3
Mfr. #:
SQJQ900E-T1_GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SQJQ900E-T1_GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQJQ900E-T1_GE3 DatasheetSQJQ900E-T1_GE3 Datasheet (P4-P6)SQJQ900E-T1_GE3 Datasheet (P7-P9)
ECAD Model:
थप जानकारी:
SQJQ900E-T1_GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-8x8L-4
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
40 V
आईडी - निरन्तर ड्रेन वर्तमान:
100 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
3.4 mOhms, 3.4 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.5 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
120 nC, 120 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
135 W
कन्फिगरेसन:
दोहोरो
च्यानल मोड:
वृद्धि
योग्यता:
AEC-Q101
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
शृङ्खला:
SQ
ट्रान्जिस्टर प्रकार:
2 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
105 S, 105 S
पतन समय:
14 ns, 14 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
7.5 ns, 7.5 ns
कारखाना प्याक मात्रा:
2000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
30 ns, 30 ns
सामान्य टर्न-अन ढिलाइ समय:
14 ns, 14 ns
Tags
SQJQ90, SQJQ9, SQJQ, SQJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 40V 100A Automotive 5-Pin(4+Tab) PowerPAK T/R
***et
Trans MOSFET N-CH 40V 100A 8-Pin PowerPAK T/R
***i-Key
MOSFET 2 N-CH 40V POWERPAK8X8
***ark
Dual N-Channel 40-V (D-S) 175C Mosfe
***ronik
DUAL N-CH 40V 100A 3,9mOhm PPAK
***ure Electronics
DUAL N-CH 40-V PPAK 8x8L
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
भाग # Mfg। विवरण स्टक मूल्य
SQJQ900E-T1_GE3
DISTI # V72:2272_17600308
Vishay IntertechnologiesAutomotive N-Channel 40 V (D-S) 175 C MOSFET1997
  • 75000:$0.9495
  • 30000:$0.9713
  • 15000:$0.9930
  • 6000:$1.0147
  • 3000:$1.0364
  • 1000:$1.0582
  • 500:$1.2888
  • 250:$1.6273
  • 100:$1.6357
  • 50:$1.7910
  • 25:$1.9900
  • 10:$2.0295
  • 1:$2.4840
SQJQ900E-T1_GE3
DISTI # SQJQ900E-T1_GE3CT-ND
Vishay SiliconixMOSFET 2 N-CH 40V POWERPAK8X8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5919In Stock
  • 1000:$1.1197
  • 500:$1.3513
  • 100:$1.6448
  • 10:$2.0460
  • 1:$2.2800
SQJQ900E-T1_GE3
DISTI # SQJQ900E-T1_GE3DKR-ND
Vishay SiliconixMOSFET 2 N-CH 40V POWERPAK8X8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5919In Stock
  • 1000:$1.1197
  • 500:$1.3513
  • 100:$1.6448
  • 10:$2.0460
  • 1:$2.2800
SQJQ900E-T1_GE3
DISTI # SQJQ900E-T1_GE3TR-ND
Vishay SiliconixMOSFET 2 N-CH 40V POWERPAK8X8
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
4000In Stock
  • 10000:$0.9496
  • 6000:$0.9746
  • 2000:$1.0121
SQJQ900E-T1_GE3
DISTI # 29000085
Vishay IntertechnologiesAutomotive N-Channel 40 V (D-S) 175 C MOSFET1997
  • 8:$2.4840
SQJQ900E-T1_GE3
DISTI # SQJQ900E-T1_GE3
Vishay IntertechnologiesTrans MOSFET N-CH 40V 100A 8-Pin PowerPAK T/R (Alt: SQJQ900E-T1_GE3)
RoHS: Compliant
Min Qty: 2000
Container: Tape and Reel
Europe - 0
  • 20000:€0.9539
  • 12000:€1.0089
  • 8000:€1.1359
  • 4000:€1.3779
  • 2000:€1.9659
SQJQ900E-T1_GE3
DISTI # SQJQ900E-T1_GE3
Vishay IntertechnologiesTrans MOSFET N-CH 40V 100A 8-Pin PowerPAK T/R - Tape and Reel (Alt: SQJQ900E-T1_GE3)
RoHS: Not Compliant
Min Qty: 2000
Container: Reel
Americas - 0
  • 20000:$0.9149
  • 12000:$0.9399
  • 8000:$0.9669
  • 4000:$1.0079
  • 2000:$1.0389
SQJQ900E-T1_GE3
DISTI # 78-SQJQ900E-T1_GE3
Vishay IntertechnologiesMOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified
RoHS: Compliant
3646
  • 1:$2.5000
  • 10:$2.2500
  • 100:$1.8000
  • 500:$1.4000
  • 1000:$1.1600
  • 2000:$1.0500
  • 4000:$1.0200
SQJQ900E-T1_GE3
DISTI # TMOS2345
Vishay IntertechnologiesDUAL N-CH 40V 100A 3,9mOhm PPAK
RoHS: Compliant
Stock DE - 0Stock HK - 0Stock US - 0
  • 2000:$1.0957
छवि भाग # विवरण
LTC5596IDC#TRMPBF

Mfr.#: LTC5596IDC#TRMPBF

OMO.#: OMO-LTC5596IDC-TRMPBF

RF Detector 100MHz to 40GHz Linear-in-dB RMS Power Detector with 35dB Dynamic Range
ISO7760DBQR

Mfr.#: ISO7760DBQR

OMO.#: OMO-ISO7760DBQR

Digital Isolators ISO7760DBQ 6CH - DIGITAL ISOLATORS
ISO7321FCQDRQ1

Mfr.#: ISO7321FCQDRQ1

OMO.#: OMO-ISO7321FCQDRQ1

Digital Isolators Auto device of ISO7321FC
LSM9DS1TR

Mfr.#: LSM9DS1TR

OMO.#: OMO-LSM9DS1TR

IMUs - Inertial Measurement Units CONSUMER MEMS
AC0402FR-071K5L

Mfr.#: AC0402FR-071K5L

OMO.#: OMO-AC0402FR-071K5L

Thick Film Resistors - SMD 1/16W 1.5K ohm 1% AEC-Q200
ISO7760DBQR

Mfr.#: ISO7760DBQR

OMO.#: OMO-ISO7760DBQR-TEXAS-INSTRUMENTS

DIGTL ISO ROBUST EMC 6CH
AC0402FR-071K5L

Mfr.#: AC0402FR-071K5L

OMO.#: OMO-AC0402FR-071K5L-YAGEO

Thick Film Resistors - SMD 1/16W 1.5K ohm 1%
LSM9DS1TR

Mfr.#: LSM9DS1TR

OMO.#: OMO-LSM9DS1TR-STMICROELECTRONICS

IMU ACCEL/GYRO/MAG I2C/SPI 24LGA
XAL5030-472MEB

Mfr.#: XAL5030-472MEB

OMO.#: OMO-XAL5030-472MEB-1190

Fixed Inductors 4.7uH 20% 5.9A 40mOhms AEC-Q200
ISO7321FCQDRQ1

Mfr.#: ISO7321FCQDRQ1

OMO.#: OMO-ISO7321FCQDRQ1-TEXAS-INSTRUMENTS

Digital Isolators Automotive, Low Power, Triple-Channel 1/1 Digital Isolator 8-SOIC -40 to 125
उपलब्धता
स्टक:
145
अर्डर मा:
2128
मात्रा प्रविष्ट गर्नुहोस्:
SQJQ900E-T1_GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २.५०
US$ २.५०
10
US$ २.२५
US$ २२.५०
100
US$ १.८०
US$ १८०.००
500
US$ १.४०
US$ ७००.००
1000
US$ १.१६
US$ १ १६०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
  • SUM70101EL 100 V P-Channel MOSFET
    Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
  • Compare SQJQ900E-T1_GE3
    SQJQ900ET1GE3 vs SQJQ904ET1GE3 vs SQJQ906ET1GE3
  • SIRA20DP TrenchFET® Gen IV MOSFET
    Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
  • P-Channel MOSFETs
    Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
  • SiP32452, SiP32453 Load Switch
    Vishay's load switches have a low input logic control threshold and a fast turn on time.
  • PowerPAIR®
    Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
Top