 | | | |
| PartNumber | SQJQ904E-T1_GE3 | SQJQ906E-T1_GE3 | SQJQ900E-T1_GE3 |
| Description | MOSFET Dual N-Ch 40V Vds AEC-Q101 Qualified | MOSFET 40V Vds Dual N-Ch AEC-Q101 Qualified | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-8x8L-4 | PowerPAK-8x8-4 | PowerPAK-8x8L-4 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Id Continuous Drain Current | 100 A | 95 A | 100 A |
| Rds On Drain Source Resistance | 2.9 mOhms, 2.9 mOhms | 2.7 mOhms | 3.4 mOhms, 3.4 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 3 V | 1.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 75 nC, 75 nC | 34 nC | 120 nC, 120 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 75 W | 50 W | 135 W |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | - | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Tube | Reel | Reel |
| Height | 1.9 mm | - | - |
| Length | 7.9 mm | - | - |
| Series | SQ | SQ | SQ |
| Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
| Width | 6.22 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 80 S, 80 S | - | 105 S, 105 S |
| Fall Time | 4 ns, 4 ns | 4 ns | 14 ns, 14 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 4.6 ns, 4.6 ns | 4 ns | 7.5 ns, 7.5 ns |
| Factory Pack Quantity | 2000 | 2000 | 2000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 30 ns, 30 ns | 26 ns | 30 ns, 30 ns |
| Typical Turn On Delay Time | 15.5 ns, 15.5 ns | 14 ns | 14 ns, 14 ns |
| निर्माता | भाग # | विवरण | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJQ906EL-T1_GE3 | MOSFET 40V Vds 160A Id AEC-Q101 Qualified | |
| SQJQ960EL-T1_GE3 | MOSFET 60V Vds Dual N-Ch AEC-Q101 Qualified | ||
| SQJQ910EL-T1_GE3 | MOSFET 100V Vds Dual N-Ch AEC-Q101 Qualified | ||
| SQJQ980EL-T1_GE3 | MOSFET 80V Vds Dual N-Ch AEC-Q101 Qualified | ||
| SQJQ904E-T1_GE3 | MOSFET Dual N-Ch 40V Vds AEC-Q101 Qualified | ||
| SQJQ906E-T1_GE3 | MOSFET 40V Vds Dual N-Ch AEC-Q101 Qualified | ||
| SQJQ900E-T1_GE3 | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | ||
Vishay |
SQJQ906E-T1_GE3 | MOSFET 2 N-CH 40V POWERPAK8X8 | |
| SQJQ900E-T1_GE3 | MOSFET 2 N-CH 40V POWERPAK8X8 | ||
| SQJQ980EL-T1_GE3 | MOSFET 2 N-CH 80V POWERPAK8X8 |