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SI1913EDH-T1-E3

SI1913EDH-T1-E3
Mfr. #:
SI1913EDH-T1-E3
निर्माता:
Vishay
विवरण:
IGBT Transistors MOSFET 20V 1.0A
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI1913EDH-T1-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - arrays
शृङ्खला
TrenchFETR
प्याकेजिङ
Digi-ReelR
प्याकेज-केस
6-TSSOP, SC-88, SOT-363
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
आपूर्तिकर्ता-उपकरण-प्याकेज
SC-70-6 (SOT-363)
FET-प्रकार
2 P-Channel (Dual)
पावर-अधिकतम
570mW
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
20V
इनपुट-Capacitance-Ciss-Vds
-
FET - सुविधा
तर्क स्तर गेट
वर्तमान-निरन्तर-नाली-Id-25°C
880mA
Rds-on-max-Id-Vgs
490 mOhm @ 880mA, 4.5V
Vgs-th-max-Id
450mV @ 100μA
गेट-चार्ज-Qg-Vgs
1.8nC @ 4.5V
Tags
SI1913E, SI1913, SI191, SI19, SI1
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET 2P-CH 20V 0.88A SC70-6
***ser
Dual MOSFETs 20V 1.0A
***
DUAL P-CH 20V@2.5VGS 1.8OHM
***ark
Transistor; Continuous Drain Current, Id:-1000mA; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):1.1ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:-0.45V; Power Dissipation, Pd:570mW ;RoHS Compliant: Yes
भाग # Mfg। विवरण स्टक मूल्य
SI1913EDH-T1-E3
DISTI # SI1913EDH-T1-E3TR-ND		Vishay SiliconixMOSFET 2P-CH 20V 0.88A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI1913EDH-T1-E3
    DISTI # SI1913EDH-T1-E3CT-ND    		Vishay SiliconixMOSFET 2P-CH 20V 0.88A SC70-6
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI1913EDH-T1-E3
      DISTI # SI1913EDH-T1-E3DKR-ND      		Vishay SiliconixMOSFET 2P-CH 20V 0.88A SC70-6
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI1913EDH-T1-E3
        DISTI # 781-SI1913EDH-E3        		Vishay IntertechnologiesMOSFET 20V 1.0A
        RoHS: Compliant        		0
          SI1913EDH-T1
          DISTI # 781-SI1913EDH          		Vishay IntertechnologiesMOSFET 20V 1.0A
          RoHS: Not compliant          		0
            SI1913EDH-T1-E3Vishay Intertechnologies 1474
              SI1913EDH-T1-E3Vishay Intertechnologies 2850
                छवि भाग # विवरण
                SI1913EDH-T1-E3

                Mfr.#: SI1913EDH-T1-E3

                OMO.#: OMO-SI1913EDH-T1-E3

                		 MOSFET RECOMMENDED ALT 781-SI1967DH-T1-GE3
                SI1913EDH-T1

                Mfr.#: SI1913EDH-T1

                OMO.#: OMO-SI1913EDH-T1-1190

                		 MOSFET RECOMMENDED ALT 781-SI1967DH-T1-GE3
                SI1913EDH-T1-GE3

                Mfr.#: SI1913EDH-T1-GE3

                OMO.#: OMO-SI1913EDH-T1-GE3-1190

                		 नयाँ र मौलिक
                SI1913EDH-T1-E3

                Mfr.#: SI1913EDH-T1-E3

                OMO.#: OMO-SI1913EDH-T1-E3-VISHAY

                		 IGBT Transistors MOSFET 20V 1.0A
                उपलब्धता
                स्टक:
                Available
                अर्डर मा:
                2500
                मात्रा प्रविष्ट गर्नुहोस्:
                SI1913EDH-T1-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
                सन्दर्भ मूल्य (USD)
                मात्रा
                एकाइ मूल्य
                विस्तार मूल्य
                1
                US$ ०.००
                US$ ०.००
                10
                US$ ०.००
                US$ ०.००
                100
                US$ ०.००
                US$ ०.००
                500
                US$ ०.००
                US$ ०.००
                1000
                US$ ०.००
                US$ ०.००
                बाट सुरु गर्नुहोस्
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