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SI3430DV-T1-GE3

SI3430DV-T1-GE3
Mfr. #:
SI3430DV-T1-GE3
निर्माता:
Vishay
विवरण:
IGBT Transistors MOSFET 100V 2.4A 2.0W 170mohm @ 10V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI3430DV-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI3430DV-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
VISHAY
उत्पादन कोटि
आईसी चिप्स
प्याकेजिङ
रील
अंश-उपनामहरू
SI3430DV-GE3
एकाइ - वजन
0.000705 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
TSOP-6
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
1.14 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
9 ns
उदय-समय
11 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
2.4 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
100 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
170 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
16 ns
सामान्य-टर्न-अन-डिले-समय
9 ns
च्यानल-मोड
वृद्धि
Tags
SI3430, SI343, SI34, SI3
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
***nell
N CHANNEL MOSFET, 100V, 2.4A, TSOP-6
***ment14 APAC
N CHANNEL MOSFET, 100V, 2.4A, TSOP-6; Tr; N CHANNEL MOSFET, 100V, 2.4A, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
भाग # Mfg। विवरण स्टक मूल्य
SI3430DV-T1-GE3
DISTI # 21256746		Vishay IntertechnologiesTrans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
RoHS: Compliant		838
  • 500:$0.2214
  • 323:$0.2246
SI3430DV-T1-GE3
DISTI # SI3430DV-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 1.8A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1159In Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI3430DV-T1-GE3
DISTI # SI3430DV-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 1.8A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1159In Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI3430DV-T1-GE3
DISTI # SI3430DV-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 1.8A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.4500
SI3430DV-T1-GE3
DISTI # SI3430DV-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3430DV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.4659
  • 6000:$0.4639
  • 12000:$0.4629
  • 18000:$0.4609
  • 30000:$0.4599
SI3430DV-T1-GE3
DISTI # SI3430DV-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R (Alt: SI3430DV-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1:€0.6869
  • 10:€0.4689
  • 25:€0.4029
  • 50:€0.3719
  • 100:€0.3579
  • 500:€0.3529
  • 1000:€0.3469
SI3430DV-T1-GE3
DISTI # 26R1863		Vishay IntertechnologiesTrans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Product that comes on tape, but is not reeled (Alt: 26R1863)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$1.2600
  • 25:$1.0400
  • 50:$0.9170
  • 100:$0.7940
  • 250:$0.7380
  • 500:$0.6820
  • 1000:$0.5390
SI3430DV-T1-GE3
DISTI # 26R1863		Vishay IntertechnologiesN CHANNEL MOSFET, 100V, 2.4A, TSOP-6,Transistor Polarity:N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V , RoHS Compliant: Yes838
  • 1:$0.1550
  • 25:$0.1550
  • 50:$0.1550
  • 100:$0.1550
  • 250:$0.1550
  • 500:$0.1550
  • 1000:$0.1550
SI3430DV-T1-GE3
DISTI # 15R4923		Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:2W , RoHS Compliant: Yes0
  • 1:$0.5100
  • 3000:$0.5070
  • 6000:$0.4830
  • 12000:$0.4270
SI3430DV-T1-GE3
DISTI # 781-SI3430DV-GE3		Vishay IntertechnologiesMOSFET 100V 2.4A 2.0W 170mohm @ 10V
RoHS: Compliant		3280
  • 1:$1.2600
  • 10:$1.0400
  • 100:$0.7940
  • 500:$0.6820
  • 1000:$0.5390
  • 3000:$0.5030
  • 6000:$0.4780
  • 9000:$0.4670
SI3430DV-T1-GE3
DISTI # 1871903		Vishay IntertechnologiesN CHANNEL MOSFET, 100V, 2.4A, TSOP-6
RoHS: Compliant		838
  • 1:$1.9800
SI3430DV-T1-GE3
DISTI # 1871903		Vishay IntertechnologiesN CHANNEL MOSFET, 100V, 2.4A, TSOP-6
RoHS: Compliant		838
  • 1:£1.1100
  • 25:£0.9210
  • 50:£0.8130
  • 100:£0.7030
  • 250:£0.6530
छवि भाग # विवरण
SI3430DV-T1-GE3

Mfr.#: SI3430DV-T1-GE3

OMO.#: OMO-SI3430DV-T1-GE3

 MOSFET 100V 2.4A 2.0W 170mohm @ 10V
SI3430DV-T1-E3

Mfr.#: SI3430DV-T1-E3

OMO.#: OMO-SI3430DV-T1-E3

 MOSFET 100V, 170 MOHMS@10V
SI3430DV-T1-GE3

Mfr.#: SI3430DV-T1-GE3

OMO.#: OMO-SI3430DV-T1-GE3-VISHAY

 IGBT Transistors MOSFET 100V 2.4A 2.0W 170mohm @ 10V
SI3430DV

Mfr.#: SI3430DV

OMO.#: OMO-SI3430DV-1190

 नयाँ र मौलिक
SI3430DV-T1-E3

Mfr.#: SI3430DV-T1-E3

OMO.#: OMO-SI3430DV-T1-E3-VISHAY

 Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
उपलब्धता
स्टक:
Available
अर्डर मा:
2000
मात्रा प्रविष्ट गर्नुहोस्:
SI3430DV-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.५४
US$ ०.५४
10
US$ ०.५१
US$ ५.०९
100
US$ ०.४८
US$ ४८.२०
500
US$ ०.४६
US$ २२७.६०
1000
US$ ०.४३
US$ ४२८.४०
बाट सुरु गर्नुहोस्
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