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SI3430DV-T1-E3

SI3430DV-T1-E3
Mfr. #:
SI3430DV-T1-E3
निर्माता:
Vishay
विवरण:
Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI3430DV-T1-E3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI3430DV-T1-E3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
Vishay Siliconix
उत्पादन कोटि
FETs - एकल
शृङ्खला
-
प्याकेजिङ
Digi-ReelR वैकल्पिक प्याकेजिङ
अंश-उपनामहरू
SI3430DV-E3
एकाइ - वजन
0.000705 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
SOT-23-6 Thin, TSOT-23-6
प्रविधि
सि
सञ्चालन - तापक्रम
-55°C ~ 150°C (TJ)
माउन्टिङ-प्रकार
सतह माउन्ट
च्यानलहरूको संख्या
1 Channel
आपूर्तिकर्ता-उपकरण-प्याकेज
6-TSOP
कन्फिगरेसन
एकल
FET-प्रकार
MOSFET एन-च्यानल, धातु अक्साइड
पावर-अधिकतम
1.14W
ट्रान्जिस्टर-प्रकार
1 N-Channel
ड्रेन-टू-स्रोत-भोल्टेज-Vdss
100V
इनपुट-Capacitance-Ciss-Vds
-
FET - सुविधा
मानक
वर्तमान-निरन्तर-नाली-Id-25°C
1.8A (Ta)
Rds-on-max-Id-Vgs
170 mOhm @ 2.4A, 10V
Vgs-th-max-Id
2V @ 250μA (Min)
गेट-चार्ज-Qg-Vgs
6.6nC @ 10V
Pd-शक्ति-डिसिपेशन
1.14 W
अधिकतम-सञ्चालन-तापमान
+ 150 C
न्यूनतम-सञ्चालन-तापमान
- 55 C
पतन-समय
11 ns
उदय-समय
11 ns
Vgs-गेट-स्रोत-भोल्टेज
20 V
आईडी-निरन्तर-नाली-वर्तमान
2.4 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
100 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
170 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
सामान्य-टर्न-अफ-ढिलाइ-समय
16 ns
सामान्य-टर्न-अन-डिले-समय
9 ns
च्यानल-मोड
वृद्धि
Tags
SI3430, SI343, SI34, SI3
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 0.17 Ohms Surface Mount Power Mosfet - TSOP-6
***et Europe
Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
***Components
MOSFET N-Channel 100V 1.8A TSOP6
***i-Key
MOSFET N-CH 100V 1.8A 6-TSOP
***ronik
N-CHANNEL-FET 2,4A 100V TSOP-6 RoHSconf
***ser
N-Channel MOSFETs 100V 8A 2W
***ponent Sense
MOSFET 100V 8A 2W
***ied Electronics & Automation
TRANSITOR, SI2323DS
***
100V, 170 MOHMS@10V
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.14W; No. Of Pins:6Pins Rohs Compliant: No
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
भाग # Mfg। विवरण स्टक मूल्य
SI3430DV-T1-E3
DISTI # V72:2272_07433160		Vishay IntertechnologiesTrans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
RoHS: Compliant		49
  • 25:$0.8309
  • 10:$0.8590
  • 1:$0.9585
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 100V 1.8A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.4500
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3CT-ND		Vishay SiliconixMOSFET N-CH 100V 1.8A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 1.8A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Cut TR (SOS) (Alt: SI3430DV-T1-E3)
RoHS: Not Compliant
Min Qty: 1
Container: Cut Tape		Americas - 61
  • 1:$0.8579
  • 30:$0.8069
  • 75:$0.8049
  • 150:$0.7699
  • 375:$0.6689
  • 750:$0.5459
  • 1500:$0.5439
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3430DV-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.5239
  • 6000:$0.5079
  • 12000:$0.4869
  • 18000:$0.4739
  • 30000:$0.4609
SI3430DV-T1-E3
DISTI # 06J7594		Vishay IntertechnologiesN CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.14W , RoHS Compliant: Yes0
  • 1:$1.2100
  • 10:$1.0700
  • 25:$0.9980
  • 50:$0.9230
  • 100:$0.8480
  • 500:$0.6570
  • 1000:$0.5190
SI3430DV-T1-E3
DISTI # 65K1923		Vishay IntertechnologiesN CHANNEL MOSFET, 100V, 1.8A, TSOP, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):185mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V , RoHS Compliant: Yes0
  • 1:$0.4700
  • 3000:$0.4700
SI3430DV-T1-E3.
DISTI # 15AC0293		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.14W,No. of Pins:6Pins , RoHS Compliant: No0
  • 1:$0.4700
  • 3000:$0.4700
SI3430DV-T1-E3
DISTI # 781-SI3430DV-E3		Vishay IntertechnologiesMOSFET 100V 8A 2W
RoHS: Compliant		360
  • 1:$1.2600
  • 10:$1.0400
  • 100:$0.7940
  • 500:$0.6820
  • 1000:$0.6000
  • 3000:$0.5990
SI3430DV-T1
DISTI # 781-SI3430DV		Vishay IntertechnologiesMOSFET 100V 8A 2W
RoHS: Not compliant		0
    SI3430DV-T1-E3Vishay Intertechnologies1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET16
    • 5:$1.0820
    • 1:$1.3525
    SI3430DV-T1-E3Vishay Intertechnologies1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET292
    • 81:$0.4500
    • 18:$0.7500
    • 1:$1.5000
    SI3430DV-T1-E3Vishay BLH 365
    • 5:$1.1250
    • 19:$0.7313
    • 70:$0.4219
    • 239:$0.3600
    SI3430DV-T1-E3.Vishay IntertechnologiesMOSFET 100V 8A 2W
    RoHS: Compliant    		Americas - 530
    • 10:$0.7040
    SI3430DV-T1-E3Vishay IntertechnologiesMOSFET 100V 8A 2W
    RoHS: Compliant    		Americas - Stock
      SI3430DV-T1-E3
      DISTI # C1S803600844371      		Vishay IntertechnologiesMOSFETs
      RoHS: Compliant      		49
      • 25:$0.8309
      • 10:$0.8590
      छवि भाग # विवरण
      SI3430DV-T1-GE3

      Mfr.#: SI3430DV-T1-GE3

      OMO.#: OMO-SI3430DV-T1-GE3

      		 MOSFET 100V 2.4A 2.0W 170mohm @ 10V
      SI3430DV-T1-E3

      Mfr.#: SI3430DV-T1-E3

      OMO.#: OMO-SI3430DV-T1-E3

      		 MOSFET 100V, 170 MOHMS@10V
      SI3430DV-T1-GE3

      Mfr.#: SI3430DV-T1-GE3

      OMO.#: OMO-SI3430DV-T1-GE3-VISHAY

      		 IGBT Transistors MOSFET 100V 2.4A 2.0W 170mohm @ 10V
      SI3430DV

      Mfr.#: SI3430DV

      OMO.#: OMO-SI3430DV-1190

      		 नयाँ र मौलिक
      SI3430DV-T1-E3

      Mfr.#: SI3430DV-T1-E3

      OMO.#: OMO-SI3430DV-T1-E3-VISHAY

      		 Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      4000
      मात्रा प्रविष्ट गर्नुहोस्:
      SI3430DV-T1-E3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.५४
      US$ ०.५४
      10
      US$ ०.५१
      US$ ५.१३
      100
      US$ ०.४९
      US$ ४८.६०
      500
      US$ ०.४६
      US$ २२९.५०
      1000
      US$ ०.४३
      US$ ४३२.००
      बाट सुरु गर्नुहोस्
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