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BSC12DN20NS3G

BSC12DN20NS3G
Mfr. #:
BSC12DN20NS3G
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSC12DN20NS3G डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TDSON-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
200 V
आईडी - निरन्तर ड्रेन वर्तमान:
11.3 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
108 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
8.7 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
50 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
1.27 mm
लम्बाइ:
5.9 mm
शृङ्खला:
OptiMOS 3
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
5.15 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
6 S
पतन समय:
3 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
4 ns
कारखाना प्याक मात्रा:
5000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
10 ns
सामान्य टर्न-अन ढिलाइ समय:
6 ns
भाग # उपनाम:
BSC12DN20NS3GATMA1 SP000781774
Tags
BSC12D, BSC12, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
भाग # Mfg। विवरण स्टक मूल्य
BSC12DN20NS3GATMA1
DISTI # BSC12DN20NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 200V 11.3A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3988In Stock
  • 1000:$0.6050
  • 500:$0.7664
  • 100:$0.9882
  • 10:$1.2500
  • 1:$1.4100
BSC12DN20NS3GATMA1
DISTI # BSC12DN20NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 200V 11.3A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3988In Stock
  • 1000:$0.6050
  • 500:$0.7664
  • 100:$0.9882
  • 10:$1.2500
  • 1:$1.4100
BSC12DN20NS3GATMA1
DISTI # BSC12DN20NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 200V 11.3A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.5208
BSC12DN20NS3 G
DISTI # SP000781774		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP (Alt: SP000781774)
RoHS: Compliant
Min Qty: 5000		Europe - 0
  • 5000:€0.6449
  • 10000:€0.5279
  • 20000:€0.4839
  • 30000:€0.4459
  • 50000:€0.4149
BSC12DN20NS3GXT
DISTI # BSC12DN20NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP - Tape and Reel (Alt: BSC12DN20NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.5119
  • 10000:$0.4939
  • 20000:$0.4759
  • 30000:$0.4599
  • 50000:$0.4519
BSC12DN20NS3GATMA1
DISTI # 50Y1813		Infineon Technologies AGMOSFET Transistor, N Channel, 11.3 A, 200 V, 0.108 ohm, 10 V, 3 V RoHS Compliant: Yes0
  • 1000:$0.6530
  • 500:$0.8270
  • 250:$0.9140
  • 100:$1.0000
  • 50:$1.1000
  • 25:$1.1900
  • 10:$1.2800
  • 1:$1.4400
BSC12DN20NS3GATMA1Infineon Technologies AGSingle N-Channel 200 V 125 mOhm 6.5 nC OptiMOS Power Mosfet - TDSON-8
RoHS: Compliant		5000Reel
  • 5000:$0.5100
BSC12DN20NS3 G
DISTI # 726-BSC12DN20NS3GATM		Infineon Technologies AGMOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
RoHS: Compliant		3326
  • 1:$1.1600
  • 10:$0.9970
  • 100:$0.7660
  • 500:$0.6770
  • 1000:$0.5340
  • 5000:$0.4740
  • 10000:$0.4560
BSC12DN20NS3G
DISTI # 726-BSC12DN20NS3G		Infineon Technologies AGMOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
RoHS: Compliant		8945
  • 1:$1.1600
  • 10:$0.9970
  • 100:$0.7660
  • 500:$0.6770
  • 1000:$0.5340
  • 5000:$0.4740
  • 10000:$0.4560
BSC12DN20NS3GATMA1
DISTI # 1702290		Infineon Technologies AGMOSFET N-CH 200V 11A 125M OPTIMOS3 TDSON, RL4960
  • 10000:£0.4290
  • 5000:£0.4580
BSC12DN20NS3GATMA1
DISTI # 2480747RL		Infineon Technologies AGMOSFET, N-CH, 200V, 11.3A, TDSON-8
RoHS: Compliant		0
  • 1000:$0.8050
  • 500:$1.0200
  • 100:$1.1500
  • 10:$1.5000
  • 1:$1.7500
BSC12DN20NS3GATMA1
DISTI # 2480747		Infineon Technologies AGMOSFET, N-CH, 200V, 11.3A, TDSON-8
RoHS: Compliant		0
  • 1000:$0.8050
  • 500:$1.0200
  • 100:$1.1500
  • 10:$1.5000
  • 1:$1.7500
BSC12DN20NS3GATMA1
DISTI # 2480747		Infineon Technologies AGMOSFET, N-CH, 200V, 11.3A, TDSON-8
RoHS: Compliant		485
  • 500:£0.6050
  • 250:£0.6530
  • 100:£0.7000
  • 25:£0.7760
  • 5:£0.8510
BSC12DN20NS3GATMA1
DISTI # XSFP00000114613		Infineon Technologies AG 
RoHS: Compliant		15000 in Stock0 on Order
  • 15000:$0.6375
  • 5000:$0.6800
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उपलब्धता
स्टक:
Available
अर्डर मा:
3000
मात्रा प्रविष्ट गर्नुहोस्:
BSC12DN20NS3G को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.१६
US$ १.१६
10
US$ १.००
US$ ९.९७
100
US$ ०.७७
US$ ७६.६०
500
US$ ०.६८
US$ ३३८.५०
1000
US$ ०.५३
US$ ५३४.००
बाट सुरु गर्नुहोस्
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