BSC12D

BSC12DN20NS3 G vs BSC12DN20NS3G vs BSC12DN20NS3GATMA1

 
PartNumberBSC12DN20NS3 GBSC12DN20NS3GBSC12DN20NS3GATMA1
DescriptionMOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3MOSFET N-CH 200V 11.3A 8TDSON
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage200 V200 V-
Id Continuous Drain Current11.3 A11.3 A-
Rds On Drain Source Resistance108 mOhms108 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge8.7 nC8.7 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation50 W50 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesBSC12DN20OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min6 S6 S-
Fall Time3 ns3 ns-
Product TypeMOSFETMOSFET-
Rise Time4 ns4 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time10 ns10 ns-
Typical Turn On Delay Time6 ns6 ns-
Part # AliasesBSC12DN20NS3GATMA1 BSC12DN2NS3GXT SP000781774BSC12DN20NS3GATMA1 SP000781774-
Tradename-OptiMOS-
निर्माता भाग # विवरण RFQ
Infineon Technologies
Infineon Technologies
BSC12DN20NS3 G MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
BSC12DN20NS3G MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
BSC12DN20NS3GATMA1 MOSFET N-CH 200V 11.3A 8TDSON
BSC12DN20NS3 G MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
BSC12DN20NS3GXT Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP - Tape and Reel (Alt: BSC12DN20NS3GATMA1)
BSC12DN20NS3G RF Bipolar Transistors MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
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