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SIHP6N80E-GE3

SIHP6N80E-GE3
Mfr. #:
SIHP6N80E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 800V Vds 30V Vgs TO-220AB
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHP6N80E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHP6N80E-GE3 DatasheetSIHP6N80E-GE3 Datasheet (P4-P6)SIHP6N80E-GE3 Datasheet (P7)
ECAD Model:
थप जानकारी:
SIHP6N80E-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220AB-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
800 V
आईडी - निरन्तर ड्रेन वर्तमान:
5.4 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
820 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
44 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
78 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
शृङ्खला:
E
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
2.5 S
पतन समय:
18 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
9 ns
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
27 ns
सामान्य टर्न-अन ढिलाइ समय:
13 ns
Tags
SIHP6N, SIHP6, SIHP, SIH
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHP6N80E-GE3
DISTI # V99:2348_21764889		Vishay IntertechnologiesSIHP6N80E-GE31000
  • 5000:$1.0465
  • 2500:$1.0687
  • 1000:$1.1254
  • 500:$1.3758
  • 100:$1.5734
  • 10:$2.0259
  • 1:$2.6594
SIHP6N80E-GE3
DISTI # SIHP6N80E-GE3-ND		Vishay SiliconixMOSFET N-CHAN 800V TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		1000In Stock
  • 5000:$1.0743
  • 3000:$1.1156
  • 1000:$1.1982
  • 100:$1.7601
  • 25:$2.0660
  • 10:$2.1900
  • 1:$2.4400
SIHP6N80E-GE3
DISTI # 29068400		Vishay IntertechnologiesSIHP6N80E-GE31000
  • 5000:$1.0465
  • 2500:$1.0687
  • 1000:$1.1254
  • 500:$1.3758
  • 100:$1.5734
  • 10:$2.0259
  • 7:$2.6594
SIHP6N80E-GE3
DISTI # 59AC7415		Vishay IntertechnologiesN-CHANNEL 800V0
  • 2500:$1.0300
  • 1000:$1.1600
  • 500:$1.3300
  • 100:$1.4800
  • 50:$1.6600
  • 25:$1.8100
  • 10:$1.9600
  • 1:$2.4000
SIHP6N80E-GE3
DISTI # 78-SIHP6N80E-GE3		Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs TO-220AB
RoHS: Compliant		1045
  • 1:$2.4500
  • 10:$2.0400
  • 100:$1.5800
  • 500:$1.3800
  • 1000:$1.1500
छवि भाग # विवरण
SIHP6N80E-GE3

Mfr.#: SIHP6N80E-GE3

OMO.#: OMO-SIHP6N80E-GE3

 MOSFET 800V Vds 30V Vgs TO-220AB
SIHP6N40D-GE3

Mfr.#: SIHP6N40D-GE3

OMO.#: OMO-SIHP6N40D-GE3

 MOSFET 400V Vds 30V Vgs TO-220AB
SIHP6N40D-E3

Mfr.#: SIHP6N40D-E3

OMO.#: OMO-SIHP6N40D-E3

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SIHP6N65E-GE3

Mfr.#: SIHP6N65E-GE3

OMO.#: OMO-SIHP6N65E-GE3

 MOSFET 650V Vds 30V Vgs TO-220AB
SIHP6N65E-GE3

Mfr.#: SIHP6N65E-GE3

OMO.#: OMO-SIHP6N65E-GE3-VISHAY

 IGBT Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
SIHP6N40D-GE3

Mfr.#: SIHP6N40D-GE3

OMO.#: OMO-SIHP6N40D-GE3-VISHAY

 IGBT Transistors MOSFET N-CHANNEL 400V
SIHP6N40D-E3

Mfr.#: SIHP6N40D-E3

OMO.#: OMO-SIHP6N40D-E3-VISHAY

 RF Bipolar Transistors MOSFET 400V 1ohm@10V 6A N-Ch D-SRS
SIHP6N40D

Mfr.#: SIHP6N40D

OMO.#: OMO-SIHP6N40D-1190

 नयाँ र मौलिक
SIHP6N80E-GE3

Mfr.#: SIHP6N80E-GE3

OMO.#: OMO-SIHP6N80E-GE3-VISHAY

 MOSFET N-CHAN 800V TO-220AB
उपलब्धता
स्टक:
Available
अर्डर मा:
1984
मात्रा प्रविष्ट गर्नुहोस्:
SIHP6N80E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २.४५
US$ २.४५
10
US$ २.०४
US$ २०.४०
100
US$ १.५८
US$ १५८.००
500
US$ १.३८
US$ ६९०.००
1000
US$ १.१५
US$ १ १५०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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