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SIZ914DT-T1-GE3

SIZ914DT-T1-GE3
Mfr. #:
SIZ914DT-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET RECOMMENDED ALT 78-SIZ980DT-T1-GE3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIZ914DT-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ914DT-T1-GE3 DatasheetSIZ914DT-T1-GE3 Datasheet (P4-P6)SIZ914DT-T1-GE3 Datasheet (P7-P9)SIZ914DT-T1-GE3 Datasheet (P10-P12)SIZ914DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAIR-6x5-8
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
16 A, 40 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
5.3 mOhms, 1.14 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.2 V, 1 V
Vgs - गेट-स्रोत भोल्टेज:
20 V, - 16 V
Qg - गेट चार्ज:
26 nC, 99 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
22.7 W, 100 W
कन्फिगरेसन:
दोहोरो
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
उचाइ:
0.75 mm
लम्बाइ:
6 mm
शृङ्खला:
SIZ
ट्रान्जिस्टर प्रकार:
2 N-Channel
चौडाइ:
5 mm
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
55 S, 68 S
पतन समय:
5 ns, 19 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
11 ns, 127 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
15 ns, 40 ns
सामान्य टर्न-अन ढिलाइ समय:
16 ns, 40 ns
Tags
SIZ91, SIZ9, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 30V 16A/40A 8-Pin PowerPAIR EP
***et
Trans MOSFET N-CH 30V 16A/40A 8-Pin PowerPAIR T/R
***i-Key
MOSFET 2N-CH 30V 16A PWRPAIR
***ark
DUAL N-CHANNEL 30-V (D-S) MOSFETS
***
DUAL N-CHANNEL 30V
भाग # Mfg। विवरण स्टक मूल्य
SIZ914DT-T1-GE3
DISTI # SIZ914DT-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 30V 16A PWRPAIR
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.8219
SIZ914DT-T1-GE3
DISTI # SIZ914DT-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 30V 16A PWRPAIR
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3000In Stock
  • 1000:$0.9093
  • 500:$1.0975
  • 100:$1.4110
  • 10:$1.7560
  • 1:$1.9400
SIZ914DT-T1-GE3
DISTI # SIZ914DT-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 30V 16A PWRPAIR
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3000In Stock
  • 1000:$0.9093
  • 500:$1.0975
  • 100:$1.4110
  • 10:$1.7560
  • 1:$1.9400
SIZ914DT-T1-GE3
DISTI # 781-SIZ914DT-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
RoHS: Compliant		0
    SIZ914DT-T1-GE3Vishay Intertechnologies 2811
      छवि भाग # विवरण
      SIZ914DT-T1-GE3

      Mfr.#: SIZ914DT-T1-GE3

      OMO.#: OMO-SIZ914DT-T1-GE3

      		 MOSFET RECOMMENDED ALT 78-SIZ980DT-T1-GE3
      SIZ914DT-T1-GE3

      Mfr.#: SIZ914DT-T1-GE3

      OMO.#: OMO-SIZ914DT-T1-GE3-VISHAY

      		 IGBT Transistors MOSFET 30V 16/40A 23/100W TrenchFET
      SIZ914DT-GE3

      Mfr.#: SIZ914DT-GE3

      OMO.#: OMO-SIZ914DT-GE3-1190

      		 नयाँ र मौलिक
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      4000
      मात्रा प्रविष्ट गर्नुहोस्:
      SIZ914DT-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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