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SUP60020E-GE3

SUP60020E-GE3
Mfr. #:
SUP60020E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET N-Channel 80 V (D-S) MOSFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SUP60020E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SUP60020E-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
80 V
आईडी - निरन्तर ड्रेन वर्तमान:
150 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
2.8 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
151.2 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
375 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
ट्यूब
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
पतन समय:
15 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
13 ns
कारखाना प्याक मात्रा:
50
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
50 ns
सामान्य टर्न-अन ढिलाइ समय:
30 ns
Tags
SUP600, SUP60, SUP6, SUP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
छवि भाग # विवरण
SUP60020E-GE3

Mfr.#: SUP60020E-GE3

OMO.#: OMO-SUP60020E-GE3

 MOSFET N-Channel 80 V (D-S) MOSFET
SUP60030E-GE3

Mfr.#: SUP60030E-GE3

OMO.#: OMO-SUP60030E-GE3

 MOSFET 80V Vds 20V Vgs TO-220
SUP60030E

Mfr.#: SUP60030E

OMO.#: OMO-SUP60030E-1190

 नयाँ र मौलिक
SUP60030E-GE3

Mfr.#: SUP60030E-GE3

OMO.#: OMO-SUP60030E-GE3-VISHAY

 MOSFET N-CH 80V 120A TO220AB
उपलब्धता
स्टक:
Available
अर्डर मा:
4500
मात्रा प्रविष्ट गर्नुहोस्:
SUP60020E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ३.१२
US$ ३.१२
10
US$ २.५९
US$ २५.९०
100
US$ २.१३
US$ २१३.००
250
US$ २.०६
US$ ५१५.००
500
US$ १.८५
US$ ९२५.००
1000
US$ १.५६
US$ १ ५६०.००
2500
US$ १.४८
US$ ३ ७००.००
5000
US$ १.४२
US$ ७ १००.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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