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SUP60030E-GE3

SUP60030E-GE3
Mfr. #:
SUP60030E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 80V Vds 20V Vgs TO-220
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SUP60030E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
80 V
आईडी - निरन्तर ड्रेन वर्तमान:
120 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
2.8 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
141 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
375 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
ट्यूब
उचाइ:
15.49 mm
लम्बाइ:
10.41 mm
शृङ्खला:
SUP
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
4.7 mm
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
82 S
पतन समय:
14 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
24 ns
कारखाना प्याक मात्रा:
50
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
34 ns
सामान्य टर्न-अन ढिलाइ समय:
24 ns
एकाइ वजन:
0.081130 oz
Tags
SUP600, SUP60, SUP6, SUP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
भाग # Mfg। विवरण स्टक मूल्य
SUP60030E-GE3
DISTI # V99:2348_14140619		Vishay IntertechnologiesTrans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220AB350
  • 2500:$1.4900
  • 1000:$1.5380
  • 500:$1.8080
  • 100:$2.0510
  • 10:$2.5360
  • 1:$3.3407
SUP60030E-GE3
DISTI # SUP60030E-GE3-ND		Vishay SiliconixMOSFET N-CH 80V 120A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Bulk		490In Stock
  • 5000:$1.4784
  • 2500:$1.5361
  • 1000:$1.6170
  • 500:$1.9173
  • 100:$2.2523
  • 10:$2.7490
  • 1:$3.0600
SUP60030E-GE3
DISTI # 25887448		Vishay IntertechnologiesTrans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220AB350
  • 5:$3.3407
SUP60030E-GE3
DISTI # SUP60030E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 80V 120A 3-Pin TO-220AB - Tape and Reel (Alt: SUP60030E-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 12000:$1.3900
  • 18000:$1.3900
  • 30000:$1.3900
  • 6000:$1.4900
  • 3000:$1.5900
SUP60030E-GE3
DISTI # SUP60030E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 80V 120A 3-Pin TO-220AB (Alt: SUP60030E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 50:€1.3900
  • 100:€1.3900
  • 500:€1.3900
  • 1000:€1.3900
  • 25:€1.5900
  • 10:€1.9900
  • 1:€2.7900
SUP60030E-GE3
DISTI # 78-SUP60030E-GE3		Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs TO-220
RoHS: Compliant		118
  • 1:$3.0800
  • 10:$2.5500
  • 100:$2.1000
  • 250:$2.0300
SUP60030E-GE3Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs TO-220Americas -
    छवि भाग # विवरण
    SUP53P06-20-E3

    Mfr.#: SUP53P06-20-E3

    OMO.#: OMO-SUP53P06-20-E3

    		 MOSFET 60V 53A 104.2W 19.5mohm @ 10V
    SUP53P06-20-E3

    Mfr.#: SUP53P06-20-E3

    OMO.#: OMO-SUP53P06-20-E3-VISHAY

    		 MOSFET P-CH 60V 9.2A TO220AB
    उपलब्धता
    स्टक:
    118
    अर्डर मा:
    2101
    मात्रा प्रविष्ट गर्नुहोस्:
    SUP60030E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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