RJH65D27BDPQ-A0#T2

RJH65D27BDPQ-A0#T2
Mfr. #:
RJH65D27BDPQ-A0#T2
निर्माता:
Renesas Electronics
विवरण:
IGBT Transistors IGBT - 650V/50A/TO-247A
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
RJH65D27BDPQ-A0#T2 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
RJH65D27BDPQ-A0#T2 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
रेनेसास इलेक्ट्रोनिक्स
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेज / केस:
TO-247A-3
माउन्टिङ शैली:
प्वाल मार्फत
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
650 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
1.3 V
अधिकतम गेट एमिटर भोल्टेज:
30 V
25 C मा निरन्तर कलेक्टर वर्तमान:
100 A
Pd - शक्ति अपव्यय:
375 W
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
शृङ्खला:
RJH65D27BDPQ
प्याकेजिङ:
ट्यूब
निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:
100 A
ब्रान्ड:
रेनेसास इलेक्ट्रोनिक्स
गेट-एमिटर चुहावट वर्तमान:
+/- 1 uA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
1
उपश्रेणी:
IGBTs
एकाइ वजन:
0.211644 oz
Tags
RJH65, RJH6, RJH
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
IGBT For Inverter 650V 50A ±30 Gate to Emitter Voltage 375W 3-Pin TO-247A Tube
***ical
Trans IGBT Chip N-CH 650V 100A 375000mW 3-Pin(3+Tab) TO-247A Tube
*** Electronic Components
IGBT Transistors IGBT - 650V/50A/TO-247A
***egrated Device Technology
IGBT for Inverter Applications
IGBT Transistors
Renesas IGBT Transistors incorporate Trench gate, thin wafer technology, and feature built-in fast recovery diode in one package. These transistors include single configuration and incorporate through hole mounting style. The IGBT transistor's collector to emitter voltage ranges from 600V to 650V. Typical applications include current resonance circuit, inverters, induction heating, microwave oven, and power factor correction circuit.Learn More
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Headers & Wire Housings TERMINAL 20-24 BULK
उपलब्धता
स्टक:
Available
अर्डर मा:
5000
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