SGP10N60RUFDTU

SGP10N60RUFDTU
Mfr. #:
SGP10N60RUFDTU
निर्माता:
ON Semiconductor / Fairchild
विवरण:
IGBT Transistors Dis Short Circuit Rated IGBT
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SGP10N60RUFDTU डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेज / केस:
TO-220-3
माउन्टिङ शैली:
प्वाल मार्फत
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
600 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
2.2 V
अधिकतम गेट एमिटर भोल्टेज:
20 V
25 C मा निरन्तर कलेक्टर वर्तमान:
16 A
Pd - शक्ति अपव्यय:
75 W
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
शृङ्खला:
SGP10N60RUFD
प्याकेजिङ:
ट्यूब
निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:
16 A
उचाइ:
9.4 mm
लम्बाइ:
10.1 mm
चौडाइ:
4.7 mm
ब्रान्ड:
सेमीकन्डक्टर / फेयरचाइल्डमा
निरन्तर कलेक्टर वर्तमान:
16 A
गेट-एमिटर चुहावट वर्तमान:
+/- 100 nA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
IGBTs
भाग # उपनाम:
SGP10N60RUFDTU_NL
एकाइ वजन:
0.063493 oz
Tags
SGP10N60RUFD, SGP10N60R, SGP10N, SGP10, SGP1, SGP
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***y
    M***y
    RU

    Ttl for 3.3 volt works, especks are sewn, you can take... delivery latvian-1 star, seller

    2019-04-07
    D***v
    D***v
    RU

    ok.

    2019-07-01
***ark
Transistor,igbt,n-Chan+Diode,600V V(Br)Ces,16A I(C),to-220 Rohs Compliant: Yes
***et Europe
Trans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220 Rail
***r Electronics
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
***-Wing Technology
Tube Through Hole N-CHANNEL SINGLE IGBT Transistor 2.8V @ 15V 10A 16A 55W 15ns/36ns
***Yang
IGBT 600V 16A 55W TO220F - Bulk
*** Electronic Components
Motor / Motion / Ignition Controllers & Drivers 600V/10A
*** Source Electronics
Trans IGBT Chip N-CH 600V 16A 55000mW 3-Pin(3+Tab) TO-220FP Tube / IGBT 600V 16A 55W TO220F
***ark
Transistor,igbt,n-Chan+Diode,600V V(Br)Ces,16A I(C),to-220Ab(Fp) Rohs Compliant: Yes
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
***ical
Trans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220AB Rail
***ark
RAIL / 600V,14A,UFS SERIES NCH IGBT W/ANTI-PARALLEL HYPERFAST DIODE
***r Electronics
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C at rated current. The IGBT is developmental type TA49190. The diode used in anti-parallel with the IGBT is the RHRD660 (TA49057).The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
***p One Stop Global
Trans IGBT Chip N-CH 600V 17A 45000mW 3-Pin(3+Tab) TO-220 Full-Pak Tube
***ure Electronics
N-Channel 600 V 17 A Flange Mount Ultrafast CoPack IGBT - TO-220FP
***trelec
IGBT Housing type: TO-220 Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.1 V Current release time: 180 ns Power dissipation: 45 W
***ment14 APAC
IGBT, 600V, 17A, TO-220FP; Transistor Type:IGBT; DC Collector Current:17A; Collector Emitter Voltage Vces:1.95V; Power Dissipation Pd:45W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:17A; Current Temperature:25°C; Fall Time Max:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Max:45W; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulsed Current Icm:92A; Rise Time:21ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 16A 32000mW 3-Pin(3+Tab) TO-220FP Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, SINGLE, 600V, 16A, TO-220FP; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 32W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins
***ical
Trans IGBT Chip N-CH 600V 16A 32000mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STGF19NC60HD Series 600 V 16 A Flange Mount Very Fast IGBT - TO-220FP
***r Electronics
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***el Electronic
STMICROELECTRONICS STGF19NC60HD IGBT Single Transistor, 16 A, 2.5 V, 35 W, 600 V, TO-220FP, 3 Pins
***icroelectronics
19 A, 600 V, very fast IGBT with Ultrafast diode
***nell
IGBT, N 600V 9A TO-220FP; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 35W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins;
भाग # Mfg। विवरण स्टक मूल्य
SGP10N60RUFDTU
DISTI # V36:1790_06359360
ON SemiconductorDISCRETE, SHORT CIRCUIT RATED0
    SGP10N60RUFDTU
    DISTI # SGP10N60RUFDTUFS-ND
    ON SemiconductorIGBT 600V 16A 75W TO220
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    955In Stock
    • 1000:$1.0696
    • 500:$1.2785
    • 100:$1.5432
    • 10:$1.9060
    • 1:$2.1100
    SGP10N60RUFDTU
    DISTI # SGP10N60RUFDTU
    ON SemiconductorTrans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220 Rail (Alt: SGP10N60RUFDTU)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 1:€1.0029
    • 10:€0.9119
    • 25:€0.8359
    • 50:€0.8019
    • 100:€0.7709
    • 500:€0.7429
    • 1000:€0.7159
    SGP10N60RUFDTU
    DISTI # SGP10N60RUFDTU
    ON SemiconductorTrans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: SGP10N60RUFDTU)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube
    Americas - 0
    • 1000:$1.5900
    • 2000:$1.5900
    • 4000:$1.4900
    • 6000:$1.4900
    • 10000:$1.4900
    SGP10N60RUFDTU
    DISTI # SGP10N60RUFDTU
    ON SemiconductorTrans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220 Rail - Bulk (Alt: SGP10N60RUFDTU)
    RoHS: Compliant
    Min Qty: 317
    Container: Bulk
    Americas - 0
    • 269:$1.0319
    • 271:$1.0249
    • 540:$1.0119
    • 1345:$0.9999
    • 2690:$0.9749
    SGP10N60RUFDTU
    DISTI # 83C0922
    ON SemiconductorTRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,16A I(C),TO-220 ROHS COMPLIANT: YES0
    • 5000:$0.8630
    • 2500:$0.8890
    • 1000:$1.1100
    • 500:$1.2300
    • 100:$1.3300
    • 10:$1.6600
    • 1:$1.9500
    SGP10N60RUFDTU
    DISTI # 512-SGP10N60RUFDTU
    ON SemiconductorIGBT Transistors Dis Short Circuit Rated IGBT
    RoHS: Compliant
    1006
    • 1:$1.9500
    • 10:$1.6500
    • 100:$1.3200
    • 500:$1.1600
    • 1000:$0.9620
    • 2000:$0.8960
    • 5000:$0.8630
    SGP10N60RUFDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    RoHS: Compliant
    769
    • 1000:$1.0400
    • 500:$1.0900
    • 100:$1.1400
    • 25:$1.1900
    • 1:$1.2800
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    स्टक:
    904
    अर्डर मा:
    2887
    मात्रा प्रविष्ट गर्नुहोस्:
    SGP10N60RUFDTU को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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